UPS APC 800 CIRCUIT
Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Text: Laser Diode Products for the OEM INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications
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Abstract: No abstract text available
Text: G4A to G4J VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway
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MIL-STD-750,
D-74025
28-Jan-03
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Sinterglass
Abstract: G4A 50 86087
Text: G4A / B / D / G / J VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway
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MIL-STD-750,
D-74025
11-Aug-04
Sinterglass
G4A 50
86087
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Untitled
Abstract: No abstract text available
Text: G4A / B / D / G / J VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway
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MIL-STD-750,
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: G4A / B / D / G / J VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway
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MIL-STD-750,
08-Apr-05
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CAL diode
Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules > 3 ? @ $ > (3 +0&- ? > (3 +0&- ? @ > E 4< E ; ! Values Units )(&& 30& +2&&)"& +0&&C (&
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600GA125D
04-0ate
CAL diode
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Untitled
Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules SKM 600GA125D Preliminary Data Features ! " #
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600GA125D
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Untitled
Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules SKM 600 GA 125 D Preliminary Data Features ! " #
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600GA125D
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Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules SKM 600GA125D Preliminary Data Features ! " #
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600GA125D
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Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules SKM 600GA125D Preliminary Data Features ! " #
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600GA125D
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Abstract: No abstract text available
Text: SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT 4B D@ +! SEMITRANSTM 4 Ultra Fast IGBT Modules SKM 600GA125D Preliminary Data Features ! " #
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600GA125D
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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FMA3050
Abstract: No abstract text available
Text: FMA3050 Pilot Datasheet v2.1 6-8.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 34 dB Gain 30 dBm P1dB Output Power at 6 V, 1.4 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5.1 x 3 sq. mm die D1 D2 D3 D4
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FMA3050
FMA3050
22-A114.
MIL-STD-1686
MILHDBK-263.
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FMA3051
Abstract: FMA3051-000
Text: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4
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FMA3051
FMA3051
22-A114.
MIL-STD-1686
MILHDBK-263.
FMA3051-000
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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AZ431BR-BTRG1
Abstract: AZ431BZ-BE1 AZ431BK-BTRE1 marking EA4 MARKING EA5 sot-23 AZ431 AZ431BN-BTRE1 E43C marking EA5 AZ431AN-BTRE1
Text: Product Brief ADJUSTABLE VOLTAGE DETECTOR PRECISION SHUNT REGULATORS Description AZ431-B AZ70XX Parametric Table The AZ431-B is a three-terminal shunt regulaAZ70XX series ICs are underadjustable voltage detectors with tor with guaranteed thermal stability
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AZ431-B
AZ70XX
AZ431-B
AZ70XX
OT-89-3
AZ431BR-BTRG1
AZ431BZ-BE1
AZ431BK-BTRE1
marking EA4
MARKING EA5 sot-23
AZ431
AZ431BN-BTRE1
E43C
marking EA5
AZ431AN-BTRE1
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Untitled
Abstract: No abstract text available
Text: nETELICS CORP SbE D bOS13SE GQGOHCH G4b MET SBHOTTKY CROSSOVER QUAD metelics High Frequency Mixer Series To 26.5 GHz J CORPORATION T-Ol-Ol FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size
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bOS13SE
MSS-60,
CR45-B49
CR53-B49
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NKT677
Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers
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AC113
AC155
AC156
AC165
AC128
AC154
AC166
AC167
AC177
AD140
NKT677
NKT612
ORP12
sft353
GEX34
1/equivalent transistor ac127
OC171 equivalent
AD149
NKT275
ac128
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transistor C 6073
Abstract: LB219 PTC6072 ic c 6073
Text: r 6 Î Ï 5 9 50 M I C R O S E M I C O R P / P O_ WER” 02E 0 0 460 -7 s D SÉlbiisTSD oGocmbO a |~ " -^ " PTC6072 PTC6073 TECH NOLOGY Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AM PERES 400 VOLTS
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PTC6072
PTC6073
transistor C 6073
LB219
ic c 6073
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CA3140S
Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
Text: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)
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CA3140
200ns/Dlv
50mV/Div
200ns/Div
50mWDh/
200ns/Div
140kHz,
Tektronix7A13
RGURE35.
CA3140S
Transistor Equivalent TT 2142
Harris CA3140AE
diagram transistor tt 2140
CA3140
CA3140E
Transistor TT 2140
PIN DIAGRAM OF IC CA3140
CA3130 peak detector
CA3140AE
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1RF9Z30
Abstract: irf9z34 IRF9Z30
Text: IRF9Z34/Z35 IRF9Z30/Z32 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds <on • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRF9Z34/Z35
IRF9Z30/Z32
1RF9Z30
IRF9Z34
IRF9Z32
IRF9Z35
IRF9Z30
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4cx250
Abstract: 741p TRANSISTOR GUIDE RSGB EHT COIL transformer amplifier 4cx250b qro linear for two metres precision rectifier using 741 4cx250b 1N414S
Text: Power supply and control circuits for a 4CX250B amplifier by A. J. WADE, BSc, G4AJW* M ANY amateurs are now using tetrodes of the 4CX250B family in their power amplifiers, and while such amplifiers usually present little difficulty from the rf point of view—there being several well-proved designs in the litera
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4CX250B
4cx250
741p
TRANSISTOR GUIDE
RSGB
EHT COIL transformer
amplifier 4cx250b
qro linear for two metres
precision rectifier using 741
1N414S
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TO SHIBA TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC74HCT02AP/AF/AFN DATA SILICON MONOLITHIC QUAD 2 -INPUT NOR GATE The TC74HCT02A is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74HCT02AP/AF/AFN
TC74HCT02A
DIP14-P-300-2
14PIN
OP14-P-300-1
150mil
SOL14-P-150-1
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Untitled
Abstract: No abstract text available
Text: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )
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LD274
fl235b05
LD274/275
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