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    DIODE G1S Search Results

    DIODE G1S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE G1S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTC2952 8 pin

    Abstract: LTC3872 LT1767-2 m1 diode LTC2952 Si6993DQ ESD Pushbutton
    Text: L DESIGN FEATURES Single Device Combines Pushbutton On/Off Control, Ideal Diode PowerPath and Accurate System Monitoring by Eko T. Lisuwandi Introduction The proliferation of handheld and battery powered devices has made controlling the power paths of two or


    Original     		PDF LTC2952 LTC2952 LTC2952 8 pin LTC3872 LT1767-2 m1 diode Si6993DQ ESD Pushbutton

    ic 2952 pin out diagram

    Abstract: LTC2952 8 pin SI7913DN LT1767-2 LTC2952IF LTC2952IUF SOT-23 MOSFET P-CHANNEL a1 1- mark 2952 2952 4 4 LTC2952
    Text: LTC2952 Push Button PowerPathTM Controller with Supervisor FEATURES DESCRIPTION • The LTC 2952 is a power management device that features three main functions: push-button on/off control of system power, ideal diode power paths and system monitoring. The LTC2952’s push-button input, which provides on/off


    Original     		PDF LTC2952 LTC2952 OT-23 LTC2950/ LTTC2951 LTC4411 LTC4412HV 2952f ic 2952 pin out diagram LTC2952 8 pin SI7913DN LT1767-2 LTC2952IF LTC2952IUF SOT-23 MOSFET P-CHANNEL a1 1- mark 2952 2952 4 4

    LTC2952 8 pin

    Abstract: ic 2952 pin out diagram
    Text: LTC2952 Pushbutton PowerPath Controller with Supervisor FEATURES DESCRIPTION n The LTC 2952 is a power management device that features three main functions: pushbutton on/off control of system power, ideal diode PowerPath controllers and system monitoring. The LTC2952’s pushbutton input, which provides on/off control of system power, has independently


    Original     		PDF LTC2952 OT-23 2952fb LTC2952 8 pin ic 2952 pin out diagram

    BB101C

    Abstract: SC-82AB Hitachi DSA00335
    Text: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB101C ADE-208-505 BB101C SC-82AB Hitachi DSA00335

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB301C ADE-208-507 Hitachi DSA002759

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB101C ADE-208-505 Hitachi DSA002759

    BB301M

    Abstract: Hitachi DSA00388
    Text: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB301M ADE-208-506 BB301M Hitachi DSA00388

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB101M ADE-208-504 Hitachi DSA002759

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB301M ADE-208-506 Hitachi DSA002759

    BB101M

    Abstract: K20F
    Text: BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB101M ADE-208-504 BB101M K20F

    BB301C

    Abstract: SC-82AB Hitachi DSA00307
    Text: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,


    Original     		PDF BB301C ADE-208-507 BB301C SC-82AB Hitachi DSA00307

    LTC2952 8 pin

    Abstract: 2952 LTC2952 LT1767-2 2952 4 4 LTC2952CF LTC2952CUF LTC2952IF Si6993DQ Si7913DN
    Text: LTC2952 Pushbutton PowerPathTM Controller with Supervisor FEATURES n n n n n n n n n n n DESCRIPTION Pushbutton On/Off Control Automatic Low Loss Switchover Between DC Sources Wide Operating Voltage Range: 2.7V to 28V Low 25 A Shutdown Current Guaranteed Threshold Accuracy: ±1.5% of


    Original     		PDF LTC2952 200ms 20-pin OT-23 LTC2908 LTC2950/ LTTC2951 LTC4411 LTC2952 8 pin 2952 LTC2952 LT1767-2 2952 4 4 LTC2952CF LTC2952CUF LTC2952IF Si6993DQ Si7913DN

    PUSH BUTTON on off 6 pin

    Abstract: push button LTC2952 8 pin push button 4 pin 4 pin push button "Push button" diode v2 push to on button DC1033 LTC2952
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1033A PUSH BUTTON ON/OFF POWER PATH CONTROLLER LTC2952CUF20 DESCRIPTION Demonstration Circuit 1033A features the LTC2952, a micro power, multi-purpose, push-button On/Off PowerPath controller that provides voltage monitoring and


    Original     		PDF LTC2952CUF20 LTC2952, LTC2952 PUSH BUTTON on off 6 pin push button LTC2952 8 pin push button 4 pin 4 pin push button "Push button" diode v2 push to on button DC1033

    m1 diode

    Abstract: No abstract text available
    Text: LTC2952 Pushbutton PowerPath Controller with Supervisor FEATURES n n n n n n n n n n n DESCRIPTION Pushbutton On/Off Control Automatic Low Loss Switchover Between DC Sources Wide Operating Voltage Range: 2.7V to 28V Low 25µA Shutdown Current Guaranteed Threshold Accuracy: ±1.5% of


    Original     		PDF LTC2952 200ms 20-pin OT-23 LTC2908 LTC2950/ LTTC2951 LTC4411 m1 diode

    diode tunnel

    Abstract: NF50 Common collector configuration basic rs gp germanium diode
    Text: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63-03W Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering Code tape and reel BAR 63-03W G Q62702-A1025 Pin Configuration


    OCR Scan     		PDF 3-03W Q62702-A1025 OD-323 EHD07139 a53Sfc 23SbOS

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    Untitled

    Abstract: No abstract text available
    Text: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier HITACHI ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 M Hz • W ithstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,


    OCR Scan     		PDF BB301C ADE-208-507

    marking ATE

    Abstract: No abstract text available
    Text: Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 M Hz • W ithstanding to ESD; Build in ESD absorbing diode. W ithstand up to 200 V at C = 200 pF,


    OCR Scan     		PDF ADE-208-504 marking ATE

    Untitled

    Abstract: No abstract text available
    Text: BB101C Build in Biasing Circuit MOS F E T IC UHF RF A m plifier HITACHI ADE-208-505 1st. Edition Features • Build in Biasing C ircuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF - 2.0 dB typ. at f = 900 M H z • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,


    OCR Scan     		PDF BB101C ADE-208-505