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    DIODE FR 210 Search Results

    DIODE FR 210 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE FR 210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Cystek

    Abstract: MV4000 ZD5248
    Text: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : Page No. : 1/12 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation


    Original     		PDF C326N3 ZD52XXBN3 OT-23 ZD5221B ZD5222B ZD5223B ZD5225B ZD5226B ZD5227B ZD52estion Cystek MV4000 ZD5248

    ZD5253

    Abstract: ZD5221B ZD5222B ZD5223B ZD52XXBN3 ZD5226B marking 81J
    Text: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : 2010.03.09 Page No. : 1/14 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation


    Original     		PDF C326N3 ZD52XXBN3 OT-23 ZD5221B ZD5222B ZD5223B ZD5225B ZD5226B UL94V-0 ZD52XXBN3 ZD5253 ZD5221B ZD5222B ZD5223B ZD5226B marking 81J

    protective shroud

    Abstract: 2B20 DRIVING A BI-COLOUR LED Circuit 10-2602.3205L EAO series 71 illumination led EAO 71 series led IEC 60947-5-5 ip67
    Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 84 Switches and Indicators 84 Contents 84 Description . 3 Product Assembly . 4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4SW110 MA4SW210 MA4SW310 Broadband Monolithic Silicon PIN Diode Switches Rev 5.0 Features MA4SW110 SPST • Broad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz • Low Insertion Loss / High Isolation • Rugged, Fully Monolithic, Glass Encapsulated


    Original     		PDF MA4SW110 MA4SW210 MA4SW310 MA4SW110 MA4SW110, MA4SW210,

    DFY2R902

    Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
    Text: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT


    Original     		PDF K09E-4. K09E4 DCS1800 IS136) CDMA800 ISM900 PDC800 PDC1500 DFY2R902 DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9

    PSD300-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD300-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


    Original     		PDF PSD300-200 DO15L PSD300-200 Power Snubber Diode

    PSD200-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD200-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


    Original     		PDF PSD200-200 PSD200-200 Power Snubber Diode

    SWITCHPLEXER

    Abstract: DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36
    Text: This is the PDF file of catalog No.K09E-5. No.K09E5.pdf 00.1.31 Murata Products for Mobile Communications GSM DCS1800 E-TACS DECT CT-2 W-CDMA ISM2400 PCS IS136 AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 ISM2400 PDC800 J-CDMA ISM2400 GSM CDMA PHS E-TACS AMPS DECT


    Original     		PDF K09E-5. K09E5 DCS1800 ISM2400 IS136) CDMA800 ISM900 PDC800 SWITCHPLEXER DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36

    A1049

    Abstract: A10495 four-layer diode POWER AMPLIFIER CIRCUIT DIAGRAM 10000 HSOP28H ILA07171 capacitor mylar transistor 355 equivalent A1049 transistor
    Text: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type


    Original     		PDF ENA1049 LA49101H LA49101H HSOP28H A1049-11/11 A1049 A10495 four-layer diode POWER AMPLIFIER CIRCUIT DIAGRAM 10000 ILA07171 capacitor mylar transistor 355 equivalent A1049 transistor

    A1049

    Abstract: TRANSISTOR A1049
    Text: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type


    Original     		PDF ENA1049 LA49101H LA49101H HSOP28H A1049-11/11 A1049 TRANSISTOR A1049

    Untitled

    Abstract: No abstract text available
    Text: NTTS2P03R2 Power MOSFET -2.48 Amps, -30 Volts P−Channel Enhancement Mode Single Micro8t Package Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery


    Original     		PDF NTTS2P03R2 Drain-to-25 NTTS2P03R2 0E-05 0E-04 0E-03 0E-02 0E-01

    G3VM-355C

    Abstract: G3VM-355CR G3VM-355F G3VM-355FR 355C FR 152 diode
    Text: MOS FET Relays G3VM-355C/CR/F/FR New MOS FET Relays with Both SPSTNO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • SPST-NO/SPST-NC models now included in the 350-V load voltage series. • Continuous load current of 120 mA 90 mA .


    Original     		PDF G3VM-355C/CR/F/FR G3VM-355xpiration G3VM-355C G3VM-355CR G3VM-355F G3VM-355FR 355C FR 152 diode

    C124 EST

    Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
    Text: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC40FD2 O-247AC C-124 C124 EST transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2

    SS3001

    Abstract: No abstract text available
    Text: 1 F I 1 5 B - 6 1 5 Q a * ± a a a $ frf* - FAST RECOVERY DIODE MODULE • f ë J I ^ Features • a s m a e i n i ^ j s v .' • Short Reverse Recovery Time Variety of Connection Menu • Insulated Type ! A pplications Arc-W elders • 7 U —T fr- l —


    OCR Scan     		PDF 50/60Hz 19S24-% I95t/R89) SS3001

    diode b24a

    Abstract: diode v3e Mitsubishi transistor QM600H
    Text: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES


    OCR Scan     		PDF QM600HD-M diode b24a diode v3e Mitsubishi transistor QM600H

    FR 151 diode

    Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
    Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)


    OCR Scan     		PDF C67076-A1050-A2 C67076-A1056-A2 FR 151 diode HJC.1 siemens mosfet BSM 50 diode fr 207

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2


    OCR Scan     		PDF BSM150GB120DN2E3166 C67076-A2112-A70 ID0fl020fl 023Sb05

    MA4SW110

    Abstract: No abstract text available
    Text: MA4SW110, MA4SW210, MA4SW310 M/A-COM Monolithic PIN Diode Switches A IÂ C G M M R F & Microwave Products Features • • • Borad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated


    OCR Scan     		PDF MA4SW110, MA4SW210, MA4SW310 MA4SW110 MA4SW110

    u212

    Abstract: IRFR122 u210 irfr210 U2-12
    Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF 7Tb4142 DD1233S IHFR210/212 IRFU210/212 IRFR210/U210 IRFR122/U212 IRFR210/21 IRFU210/212 IRFR212/U212 u212 IRFR122 u210 irfr210 U2-12

    pin diagram of ic 74ls138

    Abstract: IC 74ls138 and gate 74LS138
    Text: SANYO SEMI CONDUCTOR CORP S S 1 8 I¡IB B ii LC74HC138M 1EE D 1 T'H TD Tb CT~fc7 -2-i - S S iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 - Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.


    OCR Scan     		PDF LC74HC138M LC74HC LC74HC138M 74LS138) 54LS/74LS 035A-M161C LC74HC138. pin diagram of ic 74ls138 IC 74ls138 and gate 74LS138

    IC 74ls138

    Abstract: pin diagram of ic 74ls138 CIH7 ic 74ls138 details TTL 74ls138 6ba diode and gate 74LS138 74LS138 LC74HC138 LC74HC138M
    Text: SANYO SEMI CONDUCTOR CORP Ä llÜ lllllÄ LC74HC138M 1EE D 1 T'H TD Tb OH7-2-I-SS iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 -Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.


    OCR Scan     		PDF LC74HC LC74HC138M 74LS138) 54LS/74LS 035A-M161C LC74HC138. 5306KI/3136KI, IC 74ls138 pin diagram of ic 74ls138 CIH7 ic 74ls138 details TTL 74ls138 6ba diode and gate 74LS138 74LS138 LC74HC138

    diode fr 210

    Abstract: 1506 diode diode s 360
    Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Vr 50 V Peak reverse voltage V rm 70 Forward current If 140 mA Total power dissipation, Ts = 74 ‘ C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode


    OCR Scan     		PDF 235bOS fl235LiG5

    Untitled

    Abstract: No abstract text available
    Text: DMV series DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS MODUL DAMPER I f a v 3A&6A 5A&6A V rrm 600 V 1500 V trr 50 ns 135 ns (max) 1.5 V 1.35 V Vf DAMPER MODULATION FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ ■ FULL KIT IN ONE PACKAGE


    OCR Scan     		PDF