T3D 36 diode
Abstract: T3D+36+diode
Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0307
KAI-2093
MTD/PS-0307
T3D 36 diode
T3D+36+diode
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T3D DIODE
Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0307
KAI-2093
MTD/PS-0307
T3D DIODE
T3D DIODE clamp
diode T3D
kai-2093cm
Diode T3D 44
T3D 34
Kodak KAI 2000
T3D 55 diode
Diode T3D 55
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TMOS power FET
Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This
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MMFT3055V/D
MMFT3055V
OT-223
MMFT3055V/D*
TMOS power FET
MMFT3055VT1
TMOS E-FET
MMFT3055V
MMFT3055VT3
transistor BD 135
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AN569
Abstract: SMD310 4p03
Text: MOTOROLA Order this document by MMFT4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMFT4P03HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistor Motorola Preferred Device MMFT4P03HD is an advanced power MOSFET which utilizes
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MMFT4P03HD/D
MMFT4P03HD
MMFT4P03HD
MMFT4P03HD/D*
AN569
SMD310
4p03
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72125
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D294 BGO847 Optical receiver module Preliminary specification 1999 Nov 17 Philips Semiconductors Preliminary specification Optical receiver module BGO847 PINNING - SOT115T FEATURES • Improved BGE847BO PIN
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M3D294
BGO847
BGE847BO
OT115T
125008/00/01/pp7
72125
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MMSF3300R2
Abstract: MMSF3300R2/D
Text: MOTOROLA Order this document by MMSF3300R2/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3300R2 WaveFET Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology
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MMSF3300R2/D
MMSF3300R2
MMSF3300R2/D*
MMSF3300R2
MMSF3300R2/D
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175BGQ030
Abstract: 175BGQ030J Diode HER 207 N-1001
Text: PD-20997 rev. D 11/99 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in
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PD-20997
175BGQ030
175BGQ030J
175BGQ030
175BGQ030J
Diode HER 207
N-1001
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MMFT3055VLT1
Abstract: MMFT3055VLT3 TMOS E-FET AN569 MMFT3055VL SMD310
Text: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This
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MMFT3055VL/D
OT-223
MMFT3055VL
MMFT3055VL/D*
MMFT3055VLT1
MMFT3055VLT3
TMOS E-FET
AN569
MMFT3055VL
SMD310
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TMOS E-FET
Abstract: AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3 SMD310 A/Detector/"Detector+IC"/"CD"/MMFT3055V
Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055V N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This
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MMFT3055V/D
OT-223
MMFT3055V
MMFT3055V/D*
TMOS E-FET
AN569
MMFT3055V
MMFT3055VT1
MMFT3055VT3
SMD310
A/Detector/"Detector+IC"/"CD"/MMFT3055V
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g36N60a
Abstract: diode fr 307 IF110
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR
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IXGH36N60A3D4
IC110
O-247
IF110
8-06B
g36N60a
diode fr 307
IF110
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Z9.1B
Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Text: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88
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C1Z10B
C1Z11B
C1Z12B
C1Z13B
C1Z14B
C1Z15B
C1Z16B
C1Z17B
C1Z18B
C1Z19B
Z9.1B
Z62B
Z6.2B
Z8.2B
Z82B
Z6.8B
CBR-12
DIODE Z8.2B
z91b
Z6,2B
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Z6.8B
Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Text: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88
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C1Z10B
C1Z11B
C1Z12B
C1Z13B
C1Z14B
CBR30
0000S23
O-105
O-106
Z6.8B
Z12B
Z9.1B
DIODE Z8.2B
Z6.2B
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SS850
Abstract: No abstract text available
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MFOD3100 Fiber O ptics — M O D Fam ily Photo D etector Diode Output M O O FAM ILY FIBER O PTICS PHO TO D ETECTO R DIODE O U T P U T . . . d e s ig n e d fo r lo w c o s t in fr a r e d r a d ia t io n d e te c t io n in h ig h f r e q u e n c y F ib e r O p t ic s S y s
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C16P20F
Abstract: C16P20FR C16P10FR T0247AC C16P10F
Text: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr :35nsec FEATURES 5.3 209 4.7U85I , » Similar to T0-247AC (TO-3P) Case 15.91.626) . 3.6U42)r r ~ \S $ .ti S a y 3.4(.134) j 0 Dual Diodes - Cathode Common and Anode Common (Type - R )
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A/100â
00V/trr
35nsec
C16P10F
C16P20F
C16P10FR
C16P20FR
T0-247AC
C16P10F
C16P20FR
T0247AC
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tg 12-6l
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 1 7 .7 A /5 0 0 V /trr : 55 nsec KCF16A50 F EA TU R ES 5 3 2091 * ° Similar to TO - 247AC Case I' 1851 ^ i 15.91.6261 rT 5 .ï.< S 5 2 ï 5.71.224 5 3i.208) I" ° Dual Diodes-Cathode Common - Î * \ ) 3.61.142' v 3.41.1341 VI ' y
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247AC
KCF16A50
tg 12-6l
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FR 151 diode
Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)
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C67076-A1050-A2
C67076-A1056-A2
FR 151 diode
HJC.1
siemens mosfet BSM 50
diode fr 207
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12N08l
Abstract: 2n08 MTP12N10L B 773 transistor 70220AB YLE relay 221A-04 AN569 MTP12N08L yi73
Text: JUL li JU L 12 ’ 0 0 14=10 FR S P C TECHNOLOGY y : bH HM HK H H X ’- S L K U 1 C E 7 7 3 9 0 7 5 1 8 0 TO 9 0 1 1 4 4 1 1 3 2 7 9 4 4 4 9 P . 0 2 / 0 8 CEN TER2 244 7011 TO P . 02 9 l?33 0?5l80 O rd er th is MOTOROLA b y SEMICONDUCTOR m m d av a s h e e t
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221A04
70-220AB
MTP12Nfi
12N08l
2n08
MTP12N10L
B 773 transistor
70220AB
YLE relay
221A-04
AN569
MTP12N08L
yi73
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008E-03
Abstract: 2SJ257
Text: 2SJ257 2Q93_ 2090_ LD Low Drive Series V DSs = 3 0 V P Channel Power MOSFET 4242 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.
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2SJ257
2SJ257-applied
D013flM3
008E-03
2SJ257
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Untitled
Abstract: No abstract text available
Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode
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235bOS
fl235LiG5
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TA317
Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Text: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic
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711002b
0D41210
BYQ28F
T-03-17
OT-186
7110flsb
M2350
7110fl2b
TA317
M3142
Ultra Fast Recovery Double Rectifier Diodes
BYQ28F-50
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Untitled
Abstract: No abstract text available
Text: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment
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1N6266
1N6266
940nm
L14G1
L14G2
L14G1.
74bbfl51
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Untitled
Abstract: No abstract text available
Text: I No.1840 L A 1 1 8 6 N M onolithic Linear IC FF1 Front End for Rad io Cassette , Mu s ic Center SANYO Features and Functions . Contains RF amp, MIX, OSC, AFC diode. . Operating voltage: 1.8 to 8.0V. . Improvement in 2-signal characteristic due to the use of double-balanced
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20MHZ
LA1186N
YT-301S6
YT-40001
YT-3022A
J707b
0Dlbb54
1840-V5
65dBu
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CT1R
Abstract: ST1003 ST1007 1N6265 ST1331
Text: GaAs INFRARED EMITTING DIODE •RÉMNMk ^ U H B OPTOELECTRONICS 1N6265 PACKAGE DIMENSIONS DESCRIPTION The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING FEATURES ■ Good optical to mechanical alignment SYM B O L IN C H E S MIN. MILLIM ETERS
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1N6265
ST1331
1N6265
940nm
mA171
CT1R
ST1003
ST1007
ST1331
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery
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bh53T31
BYQ28F
OT-186
T-03-17
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