S280W555
Abstract: S280W555-753 JANTX1N6818 S280W555-104 S280W555-102 burndy terminal module block RBTB20-8 S280W555-108 M39039 S280W555-203
Text: RB Modules Description Applications Grounding and wiring integration devices for commercial/military aircraft. Standards Characteristics Material • Ground block body : aluminium alloy • Feed back modules body : polyphenylene sulfide PPS • Ground track body : PPS
|
Original
|
MIL-J-81714.
M39029
S280W555-401
S280W555-402
S280W555
S280W555-753
JANTX1N6818
S280W555-104
S280W555-102
burndy terminal module block
RBTB20-8
S280W555-108
M39039
S280W555-203
|
PDF
|
68066
Abstract: MBR4045WT IRFP460 60490
Text: Bulletin PD-20715 rev. A 09/00 MBR4045WT SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 45V Major Ratings and Characteristics Characteristics Description/Features Values Units 40 A IFRM @ TC = 125°C (Per Leg) 40 A VRRM 45 V IFSM @ tp = 5 µs sine 1020 A VF
|
Original
|
PD-20715
MBR4045WT
40Amp
MBR4045WT
68066
IRFP460
60490
|
PDF
|
IRFP460
Abstract: MBR4045WT 035H B1201
Text: Bulletin PD-20715 rev. B 12/01 MBR4045WT SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 45V Major Ratings and Characteristics Characteristics Description/Features Values Units 40 A IFRM @ TC = 125°C (Per Leg) 40 A VRRM 45 V IFSM @ tp = 5 µs sine 1020 A VF
|
Original
|
PD-20715
MBR4045WT
40Amp
MBR4045WT
an-01
O-247
IRFP460
035H
B1201
|
PDF
|
df2 diode
Abstract: SAP1024B SEN6A39 diode df2 AVANT SAP1024B SAP1024 SEN6A39LQFP LQFP100 QFP100 SEN6A40
Text: DATA SHEET SEN6A39 80-COLUMN driver for dot-matrix STN LCD To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 20 SEN6A39
|
Original
|
SEN6A39
80-COLUMN
SEN6A39
80-COLUMN
SEN6A40
68-ROW
80-output
df2 diode
SAP1024B
diode df2
AVANT SAP1024B
SAP1024
SEN6A39LQFP
LQFP100
QFP100
|
PDF
|
175BGQ045
Abstract: 175BGQ045J c248a
Text: PD-20710 rev. C 11/99 175BGQ045 175BGQ045J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in
|
Original
|
PD-20710
175BGQ045
175BGQ045J
175BGQ045
175BGQ045J
c248a
|
PDF
|
100BGQ045
Abstract: 100BGQ045J
Text: PD-20709 rev. C 11/99 100BGQ045 100BGQ045J 100 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics Description/Features The NEW 100BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in
|
Original
|
PD-20709
100BGQ045
100BGQ045J
100BGQ045
100BGQ045J
|
PDF
|
IC OZ 9936
Abstract: 10E-2 38E-2 80CPQ020
Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable
|
Original
|
PD-20711
80CPQ020
O-247AC
IC OZ 9936
10E-2
38E-2
80CPQ020
|
PDF
|
10E-2
Abstract: 38E-2 80CPQ020 BV-24
Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable
|
Original
|
PD-20711
80CPQ020
O-247AC
10E-2
38E-2
80CPQ020
BV-24
|
PDF
|
0135Z0400
Abstract: diode fr 207
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2 kHz Key Parameters = 400 V RRM
|
Original
|
0135Z0400
1768/138a,
DS/207/06b
Mar-13
0135Z04n
Mar-13
0135Z0400
diode fr 207
|
PDF
|
diode fr 207
Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526
|
Original
|
0135Z0400
0135Z0400
0135Z0200
1768/138a,
DS/207/06a
Mar-11
Mar-11
diode fr 207
5SDD0135Z0400
5sdd0135z0200
0135Z0200
|
PDF
|
409CNQ135
Abstract: 409CNQ150 40HFL40S02 IRFP460 IRFP460 SWITCHING FREQUENCY
Text: PD-20723 12/99 409CNQ. SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 200Apk, TJ=125°C (per leg) TJ range Description/Features 409CNQ. Units
|
Original
|
PD-20723
409CNQ.
O-244AB
200Apk,
409CNQ
409CNQ135
409CNQ150
40HFL40S02
IRFP460
IRFP460 SWITCHING FREQUENCY
|
PDF
|
209CNQ135
Abstract: 209CNQ 209CNQ150 40HFL40S02 IRFP460 aval
Text: PD-20722 12/99 209CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 209CNQ. Units 200 A 135 to 150 V 10000 A 0.71 V - 55 to 175 °C waveform VRRM range IFSM @ tp = 5 µs sine
|
Original
|
PD-20722
209CNQ.
O-244AB
100Apk,
209CNQ
209CNQ135
209CNQ150
40HFL40S02
IRFP460
aval
|
PDF
|
OZ 9936
Abstract: 129NQ 129NQ135 129NQ150 40HFL40S02 IRFP460
Text: PD-20719 12/99 129NQ. SERIES SCHOTTKY RECTIFIER 120 Amp Major Ratings and Characteristics Description/Features The 129NQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation
|
Original
|
PD-20719
129NQ.
129NQ
sine33
OZ 9936
129NQ135
129NQ150
40HFL40S02
IRFP460
|
PDF
|
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
|
Original
|
DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
|
PDF
|
|
249NQ150
Abstract: 249NQ 249NQ135 40HFL40S02 IRFP460
Text: PD-20721 12/99 249NQ. SERIES 240 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Description/Features Characteristics 249NQ. Units IF AV Rectangular waveform 240 A 135 to 150 V 20000 A 0.72 V VRRM range IFSM @ tp = 5 µs sine VF @ 240Apk, TJ=125°C
|
Original
|
PD-20721
249NQ.
240Apk,
249NQ
Half-P33
249NQ150
249NQ135
40HFL40S02
IRFP460
|
PDF
|
max8675
Abstract: BY 409 500 va sine wave ups circuit 409DMQ135 409DMQ150 40HFL40S02 IRFP460
Text: PD-20724 12/99 409DMQ. Series SCHOTTKY RECTIFIER 400 Amp TO-244AB isolated doubler Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 409DMQ. Units 400 A 135 to 150 V 25,500 A 0.72 V - 55 to 175 °C waveform VRRM
|
Original
|
PD-20724
409DMQ.
O-244AB
200Apk,
409DMQ
max8675
BY 409
500 va sine wave ups circuit
409DMQ135
409DMQ150
40HFL40S02
IRFP460
|
PDF
|
X10391
Abstract: No abstract text available
Text: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available
|
OCR Scan
|
IL-STD-750
X10391
|
PDF
|
FR 151 diode
Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)
|
OCR Scan
|
C67076-A1050-A2
C67076-A1056-A2
FR 151 diode
HJC.1
siemens mosfet BSM 50
diode fr 207
|
PDF
|
Untitled
Abstract: No abstract text available
Text: b3E • b EMTf iS? GD1 S G S7 M ITS U B IS H I DGTL 207 ■ M IT 3 MITSUBISHI BIPOLAR DIGITAL ICs M54538P LOGIC 7-UNIT 350mA TRANSISTOR ARRAY AND MOTOR DRIVER D E S C R IP T IO N The M54538P, 7-channel sink driver and a motor driver, is designed for use in a thermal printer.
|
OCR Scan
|
M54538P
350mA
M54538P,
350mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EL2075C elantec EL2075C 2 GHz GBWP Gaìn-ùf-lO Stable Operational Amplifier HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F e a tu r e s G e n e ra l D escrip tio n • 2 GHz gain-bandwidth product The E L 2075 is a precision voltage-feedback amplifier featuring
|
OCR Scan
|
EL2075C
Gain-of-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode
|
OCR Scan
|
235bOS
fl235LiG5
|
PDF
|
TA317
Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Text: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic
|
OCR Scan
|
711002b
0D41210
BYQ28F
T-03-17
OT-186
7110flsb
M2350
7110fl2b
TA317
M3142
Ultra Fast Recovery Double Rectifier Diodes
BYQ28F-50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery
|
OCR Scan
|
bh53T31
BYQ28F
OT-186
T-03-17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D -91754 International I R Rectifier IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EG A RAD HARD 30Volt, 0.009ft, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y HEXFETs demonstrate immunity to SEE failure. Addi
|
OCR Scan
|
IRHNB7Z60
IRHNB8Z60
30Volt,
009ft,
|
PDF
|