BC237
Abstract: MMBV2107 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAV74LT1
236AB)
DEVICE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MMBV2107
BCY72
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TZX27B
Abstract: TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
Text: TZX2V4 - TZX36C PRELIMINARY 500mW EPITAXIAL PLANAR ZENER DIODE Features • · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current B A Mechanical Data · · · · · A C D Case: DO-35, Glass Leads: Solderable per MIL-STD-202,
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TZX36C
500mW
DO-35,
MIL-STD-202,
DO-35
TZX30B
TZX30C
TZX33
TZX33A
TZX27B
TZX20C
TZX10
TZX10A
TZX10B
TZX10C
TZX10D
TZX11
TZX36C
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tzx24b
Abstract: No abstract text available
Text: TZX2V4 - TZX36C PRELIMINARY 500mW EPITAXIAL PLANAR ZENER DIODE Features • · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current B A Mechanical Data · · · · · A C D Case: DO-35, Glass Leads: Solderable per MIL-STD-202,
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TZX36C
500mW
DO-35,
MIL-STD-202,
DO-35
200mA
DS30089
tzx24b
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marking code 5a sot-363
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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MMBD6050LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
marking code 5a sot-363
BC237
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BC237
Abstract: SOT-363 marking jf sot363 marking qs
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C
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BAL99LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
SOT-363 marking jf
sot363 marking qs
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BC237
Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAS16LT1
236AB)
M218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
A6 TSOP-6 MARKING
SOT 23-3 marking code a6 diode
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BC237
Abstract: MPS9
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAW56WT1
70/SOT
MA218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MPS9
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motorola 5118 user manual
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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MMBD2837LT1
MMBD2838LT1
MMBD2838LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
motorola 5118 user manual
BC237
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SMD MARKING CODE 102
Abstract: smd diode fr diode smd marking 1A marking code W1 transistor smd code marking 102 0028C diode FR 105 MARKING CODE 0051
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDFR Series RoHS Device Features Bi-diretional ESD protection. (16kV) IEC 61000-4-2 rating. Surface mount package. High component density. 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005(2512) standard package,
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MIL-STD-750
CPDFR12V:
CPDFR24V:
QW-A7004
CPDFR12V
CPDFR24V
FR/1005
SMD MARKING CODE 102
smd diode fr
diode smd marking 1A
marking code W1
transistor smd code marking 102
0028C
diode FR 105
MARKING CODE 0051
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smd diode fr
Abstract: CDSFR4148
Text: SMD Switching Diode SMD Diodes Specialist CDSFR4148 RoHS Device High Speed Features Designed for mounting on small surface. 1005(2512) Extremely thin/leadless package. 0.102(2.60) 0.095(2.40) High mounting capability, strong surge withstand, high reliability.
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CDSFR4148
MIL-STD-750
FR/1005
QW-A0026
smd diode fr
CDSFR4148
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A1069
Abstract: smd marking bb
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230R RoHS Device Io = 200 mA V R = 30 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Low reverse current. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package.
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CDBFR0230R
MIL-STD-750
FR/1005
QW-A1069
CDBFR0230R
A1069
smd marking bb
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smd diode 27 E
Abstract: CDBFR0230L smd diode code marking 27 smd diode schottky code marking 29
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230L RoHS Device Io = 200 mA V R = 30 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Low forward voltage. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package.
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CDBFR0230L
MIL-STD-750
FR/1005
QW-A1067
smd diode 27 E
CDBFR0230L
smd diode code marking 27
smd diode schottky code marking 29
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FRGB1315C
Abstract: LED TRI-COLOR FAGB1315C
Text: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃～100℃ Operating Temperature : -40℃～ 85℃
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1315C
FRGB1315C
LED TRI-COLOR
FAGB1315C
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FR 302 Diode
Abstract: No abstract text available
Text: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃～100℃ Operating Temperature : -40℃～ 85℃
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1315C
470nm
533nm
605nm
626nm
FR 302 Diode
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transistor 3504 npn
Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803
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OCR Scan
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Efl463S2
TMI\I515TQR
rc-25Â
2N3867
2N3868
2N5147
2N5149
2N5151
2N5153
2N5148
transistor 3504 npn
2N3742
2N5150
2N5152
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2N3867
Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803
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OCR Scan
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PDF
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Efl463S2
TMI\I515TQR
rc-25Â
2N3867
2N3868
2N5147
2N5149
2N5151
2N5153
2N5148
2N5150
2N5152
2N5154
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X10391
Abstract: No abstract text available
Text: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available
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PDF
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IL-STD-750
X10391
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BSS95
Abstract: BSS 95 siemens transistor bss S 437 Diode
Text: SIEMENS SIPMOS Small-Signal Transistor BSS 95 = 240 V = 0.8 A ^DSIon = 8-0 Q VDS TO-202 /D • N channel • Enhancement mode • Package: TO -202') Type Ordering code for version in bulk BSS 95 Q62702-S461 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage
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PDF
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O-202
Q62702-S461
BSS95
BSS 95 siemens
transistor bss
S 437 Diode
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5SV6
Abstract: 3A21N C67078-A1107-A2
Text: y L ôûd i> m ô23SbQS qomflû2 i m s i e s 14882 D T - 3 e? - / 3 88D BUZ 202 SIEMENS AKTIENÛESELLSCHAF -Main ratings N-Channel = 400 V Draln-source voltage ^3 = 11,5 A Continuous drain current Draln-source on-resistance ^DS on = 0,5 n Description C ase
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23SbQS
C67078-A1107-A2
fl535
5SV6
3A21N
C67078-A1107-A2
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diode marking A43
Abstract: No abstract text available
Text: c o A tc m r SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDFR S e r i e s R o H s Device Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 1 0 0 5 (2 5 1 2 ) High c o m p o n e n td e n s ity . 0 .1 0 2 (2 .6 0 ) 0 .0 9 5 (2 .4 0 )
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MIL-STD-750
CPDFR12V:
CPDFR24V:
CPDFR36V:
CPDFR12V
CPDFR24V
CPDFR36V
diode marking A43
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transistor MWTA 06
Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Text: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %
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2SJ202
2SK1580
transistor MWTA 06
transistor marking bh ra
diode SS 3
marking WMM
T460-8525
BH rn transistor
nec 8525
transistor bh ra
2SJ202
2SK1580
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Untitled
Abstract: No abstract text available
Text: LL4150 SURFACE MOUNT FAST SWITCHING DIODE Features_ • • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance Mechanical Data_ • • • • • Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202,
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OCR Scan
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PDF
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LL4150
MIL-STD-202,
100mA
200mA,
DS30069
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Untitled
Abstract: No abstract text available
Text: 1N4150 FAST SWITCHING DIODE Features • • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance I T D Mechanical Data_ • • • • • Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208
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OCR Scan
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PDF
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1N4150
DO-35,
MIL-STD-202,
DO-35
200mA,
100mA
DS12018
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ma4p
Abstract: MA4P7108 MA4P7010 diode KS 1060 - R MA4P4302
Text: HIPAX Series PIN Diodes High Power PIN Diodes MA4P4000, MA4P4300, MA4P7000 MA4P7100, MA4P1200, MA4P1250 Features • High Power Handling • Low Loss, Low Distortion • Voltage Ratings to 1000 Volts • Passivated PIN Chip - Full Face Bonded • Hermetically Sealed
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MA4P4000,
MA4P4300,
MA4P7000
MA4P7100,
MA4P1200,
MA4P1250
A4P7000F,
A4P7100F,
A4P1250
4000F,
ma4p
MA4P7108
MA4P7010
diode KS 1060 - R
MA4P4302
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