BC237
Abstract: MMBV2107 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAV74LT1
236AB)
DEVICE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MMBV2107
BCY72
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BAS16HT1
Abstract: A6 marking diode Diode marking CODE UF SOD
Text: BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C
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BAS16HT1
OD-323
BAS16HT1/D
BAS16HT1
A6 marking diode
Diode marking CODE UF SOD
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marking code 5a sot-363
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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MMBD6050LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
marking code 5a sot-363
BC237
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BC237
Abstract: SOT-363 marking jf sot363 marking qs
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C
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BAL99LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
SOT-363 marking jf
sot363 marking qs
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MMDL6050T1
Abstract: No abstract text available
Text: MMDL6050T1 Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 70 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C
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MMDL6050T1
OD-323
MMDL6050T1/D
MMDL6050T1
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BC237
Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAS16LT1
236AB)
M218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
A6 TSOP-6 MARKING
SOT 23-3 marking code a6 diode
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BC237
Abstract: MPS9
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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BAW56WT1
70/SOT
MA218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MPS9
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motorola 5118 user manual
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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MMBD2837LT1
MMBD2838LT1
MMBD2838LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
motorola 5118 user manual
BC237
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BAV70
Abstract: BAV70TT1 BAV70TT1G
Text: BAV70TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package May be Available.* The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com ANODE 1 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current
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BAV70TT1
BAV70TT1/D
BAV70
BAV70TT1
BAV70TT1G
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E3P303
Abstract: 279-87 NTMSD3P303R2
Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF
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NTMSD3P303R2
NTMSD3P303R2/D
E3P303
279-87
NTMSD3P303R2
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E3P102
Abstract: NTMSD3P102R2
Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF
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NTMSD3P102R2
NTMSD3P102R2/D
E3P102
NTMSD3P102R2
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BAW56TT1
Abstract: BAW56TT1G
Text: BAW56TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8
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BAW56TT1
BAW56TT1/D
BAW56TT1
BAW56TT1G
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e3p1
Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
e3p1
MOSFET 1052
NTMSD3P102R2
NTMSD3P102R2G
NTMSD3P102R2SG
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Untitled
Abstract: No abstract text available
Text: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET
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NTMSD3P303R2
NTMSD3P303R2/D
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Untitled
Abstract: No abstract text available
Text: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Package is Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection
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BAV99WT1,
BAV99RWT1
BAV99WT1
BAV99LT1.
SC-70
BAV99RWT1
BAV99WT1/D
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BAV99WT1G
Abstract: BAV99LT1 BAV99RWT1 BAV99RWT1G BAV99WT1
Text: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Packages are Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection
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BAV99WT1,
BAV99RWT1
BAV99WT1
BAV99LT1.
BAV99WT1
SC-70
20for
BAV99WT1/D
BAV99WT1G
BAV99LT1
BAV99RWT1
BAV99RWT1G
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sot75
Abstract: BAS16TT1 BAS16TT1G BAW62 SOT-75
Text: BAS16TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available* http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Symbol
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BAS16TT1
BAS16TT1/D
sot75
BAS16TT1
BAS16TT1G
BAW62
SOT-75
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VITA-57
Abstract: No abstract text available
Text: DEMO MANUAL DC1532 LTC2268-14/-12, LTC2267-14/-12, LTC2266-14/-12, LTC2265-14/-12, LTC2264-14/-12, LTC2263-14/-12 12-/14-Bit, 25Msps to 125Msps Dual ADCs Description Demonstration circuit 1532 supports a family of 14-/12bit 25Msps to 125Msps ADCs. Each assembly features
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DC1532
LTC2268-14/-12,
LTC2267-14/-12,
LTC2266-14/-12,
LTC2265-14/-12,
LTC2264-14/-12,
LTC2263-14/-12
12-/14-Bit,
25Msps
125Msps
VITA-57
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Js MARKING CODE SOT23
Abstract: No abstract text available
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
Js MARKING CODE SOT23
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MARKING JS sot-23
Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
MARKING JS sot-23
BAS19
BAS19LT1
BAS19LT3
BAS20
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS21LT1G
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5v3 tube
Abstract: 5v3 rectifier TUBE 5v3 general electric I960 rs tube
Text: 5V3 ET-T1630 5V3 5-60 TWIN DIODE P â d fr * * TUBES Page 1 FOR FULL-WAVE POWER RECTIFIER APPLICATIONS = DESCRIPTION AND RATING“ The 5V3 is a filamentary twin diode designed for use as a full-wave rectifier in the power supply of color television receivers or other equipment that has
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ET-T1630
B8-118,
K-556
K-5561
5v3 tube
5v3 rectifier
TUBE 5v3
general electric
I960
rs tube
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diode bas32
Abstract: No abstract text available
Text: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.
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BAS32
BAS32
OD-80
45ward
diode bas32
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Untitled
Abstract: No abstract text available
Text: u n ite d * „ m o n o lith ic sem ico n d u cto rs « »A " : / nU m h h n n CHMl 190 «9V K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
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CHM1190
CHM1191.
DSCHM11909025
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Untitled
Abstract: No abstract text available
Text: u n ited m o n o lith ic sem ico n du ctors « » *„ : nuM H H n-i C H M l 191 r K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
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CHM1191
CHM1190.
DSCHM11919025
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