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    DIODE EQUIVALENT T25 4 Search Results

    DIODE EQUIVALENT T25 4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    DIODE EQUIVALENT T25 4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SF H 221 SIEMENS Silicon Differential Photodiode Dimensions in inches mm .012 (.3) Max.-1 .570(14,5) .491 (12.5) Radiar« sensitive area h. 134(3.4) 118(3.0) 0.236(6.0) 0.228 5.0 i 0.326 0.32 (8.3) .200 r (5.08) -1 ÿ| (a.o> L«-3 0.020 (.5) 0.016 (.4) Anode A /


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    E006639 850nm, SFH221 PDF

    Untitled

    Abstract: No abstract text available
    Text: M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS


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    M54HC155 M74HC155 54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155 M54/M74HC155 PDF

    1084CE

    Abstract: 1084-CE
    Text: A JTi ,3803 - ’M i - lïnSftS B aiw M k sP 5 “ ¡¡¡§ H P A H A s vcc Small Outline Ceramic Hybrid Optocoupler High Speed TTL [ V - 4 VO 3G N D E F “ <£> 1,65mm Ì _ Device Isocom Ltd supplies high reliability devices for applications requiring an operating tem­


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    BS9000 RH-45% 1084CE 1084-CE PDF

    Untitled

    Abstract: No abstract text available
    Text: HV53 HV54 Supertex inc. 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier HV53 HV5308DJ HV5308PJ HV54 HV5408DJ HV5408PJ


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    32-Channel HV5308DJ HV5308PJ HV5408DJ HV5408PJ MIL-STD-883 HV5308PG HV5308X RBHV5308DJ HV5408PG PDF

    diode t25 4 j5

    Abstract: No abstract text available
    Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420


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    SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) diode t25 4 j5 PDF

    Untitled

    Abstract: No abstract text available
    Text: H V53 H V54 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Inform ation Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier 44 Lead Quad Plastic Gullwing Die 44 J-Lead Quad Ceramic Chip Carrier


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    32-Channel HV5308DJ HV5408DJ HV5308PJ HV5408PJ HV5308PG HV5408PG HV5308X HV5408X MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs PWM Driver for CD and MD Players BH6505K T h e B H 6 5 0 5 K is a 4 -c h a n n e l P W M d riv e r d e s ig n e d fo r C D a n d M D p la y e r m o to r an d a c tu a to r d rives. T h e p o w e r M O S F E T output stag e allows for applications with low p ow er consum ption. This 1C also has a c h arge pum p circuit


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    BH6505K f-176 1711D PDF

    2MB1100NC-120

    Abstract: 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22
    Text: S d llG B T ^ ^ IL — JU N '> u - "j + 's V W r Ni^lJ—X j 2MBI100NC-120 X j 1200V / 100A/ 2 flilifl : Features High Speed Switching > *? • J± 8 *R j Voltage Drive • te - r > ? ? ? Low Inductance Module Structure : Applications • i — ^ IE W jE H >'< — ?


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    2MBI1OONC-120 200V/100A/ J94/J94) 2MB1100NC-120 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22 PDF

    taser circuit

    Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
    Text: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness


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    SLD323XT SLD323XT SLD300 600mW 800mV taser circuit 808 nm 100 mw SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 PDF

    Si515

    Abstract: No abstract text available
    Text: d r i& t n ik l G B • * a x T ^ i ^ i L — " j T 's ' f W - f N '> J U n M y ’J - X j 2 M B 1 1 N C - 1 2 IJ - X ' j 1200V/100A/ 2 ffliifi : Features • y f H i g h Speed Switching • J±8*Rj Voltage Drive Low Inductance Module Structure ■E3& : Applications


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    200V/100A/ J94/J94) Si515 PDF

    TIL 815

    Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
    Text: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness


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    SLD322XT SLD322XT SLD300 TIL 815 SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04 PDF

    DIODE T25 4 Jo

    Abstract: cd photo diode
    Text: SONY SLD322XT High Pow er Density 0.5 W Laser Diode D escription Package O utline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1. C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness


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    SLD322XT DIODE T25 4 Jo cd photo diode PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4518P/F TC74HC4520P/F TC74HC4518P/F DUAL BCD COUNTER TC74HC4520P/F DUAL 4-BIT BINARY COUNTER T h e T C 7 4 H C 4 5 1 8 and T C 7 4 H C 4 5 2 0 a r e h i g h speed CMOS D U A L B C D / 4 - B I T B I N A R Y C O U N T E R f a b r i c a t e d w i t h s i l i c o n g a t e C 2MOS tech n o logy.


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    TC74HC4518P/F TC74HC4520P/F TC74HC4520P/F 4518B/4520B) TC74HC4520 PDF

    PQ05R

    Abstract: PQ12RH11 PQ05RH11 PQ05RH1 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series
    Text: P Q 05R H 1/P Q 05R H 11 Series 4-Terminal Low Power-Loss Voltage Regulators PQ0 5 RH1/11 Series • 1.5A Output, Low Power-Loss Voltage Regulators G en eral D escription The Sharp’s PQ 05R H 1/PQ 05R H 1 1 series 4terminal low power-loss voltage regulators


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    PQ05RH1 /PQ05RH11 PQ05R PQ05RH1/PQ05RH11 PQ05RH11 001327D PQ12RH11 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series PDF

    BC 104k capacitor

    Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
    Text: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV


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    VA2713 75MHz 100MHz VA2713 20KHz 50MHz. 30MHz 30MHz. 10KHz 100KHZ BC 104k capacitor 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30 PDF

    smd diode A2

    Abstract: A2 DIODE SMD CODE MARKING smd diode code a6 smd diode a6 SMD DIODE A6 t SOT-23 smd diode marking a6 DIODE SMD T25 A2 diode smd DIODE SMD A6 smd diode code A2
    Text: Formosa MS SMD Switching Diode BAS16 List List. 1 Package outline. 2 Features. 2


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    BAS16 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 smd diode A2 A2 DIODE SMD CODE MARKING smd diode code a6 smd diode a6 SMD DIODE A6 t SOT-23 smd diode marking a6 DIODE SMD T25 A2 diode smd DIODE SMD A6 smd diode code A2 PDF

    smd diode marking jc sot23

    Abstract: smd diode code A4 smd diode A4 DIODE smd marking A4 marking code jg SMD diode smd diode a7 smd diode marking JC marking code JG SMD smd diode marking A7 SOT-23 smd diode A2
    Text: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2


    Original
    BAL99/BAV99/BAW56/BAV70 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 smd diode marking jc sot23 smd diode code A4 smd diode A4 DIODE smd marking A4 marking code jg SMD diode smd diode a7 smd diode marking JC marking code JG SMD smd diode marking A7 SOT-23 smd diode A2 PDF

    smd diode marking a6

    Abstract: A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20
    Text: Formosa MS SMD Switching Diode Array BAS16X List List. 1 Package outline. 2 Features. 2


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    BAS16X MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 smd diode marking a6 A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20 PDF

    SMD MARKING CODE A20

    Abstract: A2 diode smd BAS70WS
    Text: Formosa MS SMD Schottky Barrier Diode BAS70WS List List. 1 Package outline. 2 Features. 2


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    BAS70WS MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 SMD MARKING CODE A20 A2 diode smd BAS70WS PDF

    1.5KE transil diode

    Abstract: Schaffner load dump generator Schaffner NSG AN554 diode t25 4 E5 1.5ke transil TRANSIL BZW50-22 equivalent transil diode equivalent BZW04
    Text: AN554 APPLICATION NOTE CHOICE OF PROTECTION IN AUTOMOTIVE APPLICATIONS CLASSICAL TOPOLOGY INTRODUCTION This paper describes a protection schematic based on discrete components, together with a general method of choosing the components to suppress the surge effects on automotive modules.


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    AN554 1.5KE transil diode Schaffner load dump generator Schaffner NSG AN554 diode t25 4 E5 1.5ke transil TRANSIL BZW50-22 equivalent transil diode equivalent BZW04 PDF

    mrf154 amplifier

    Abstract: MRF154 Mrf154 M
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


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    MRF154 mrf154 amplifier Mrf154 M PDF

    A2 diode smd

    Abstract: BAT54WS
    Text: Formosa MS SMD Schottky Barrier Diode BAT54WS List List. 1 Package outline. 2 Features. 2


    Original
    BAT54WS MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 A2 diode smd BAT54WS PDF

    diode smd marking jy

    Abstract: sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD
    Text: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2


    Original
    BAS116/BAW156/BAV170/BAV199 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 diode smd marking jy sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD PDF

    diode smd marking jx

    Abstract: No abstract text available
    Text: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2


    Original
    BAS116/BAW156/BAV170/BAV199 125OC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1038 diode smd marking jx PDF