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    DIODE EQUIVALENT LIST Search Results

    DIODE EQUIVALENT LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    DIODE EQUIVALENT LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UML2N Transistors Low-frequency transistor isolated transistor and diode UML2N Features 1) The 2SC2412K and a diode are housed independently in a UMT package. External dimensions (Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 Equivalent circuit (1) 2.1 (2) 1.25


    Original     		PDF 2SC2412K

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package *Pb-free plating product number: BAV99L For 6 Pin Package „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R


    Original     		PDF BAV99 BAV99L BAV99-AE3-R BAV99L-AE3-R BAV99-AL3-R BAV99L-AL3-R BAV99-AN3-R BAV99L-AN3-R BAV99-AL6-R BAV99L-AL6-R

    LM103 zener

    Abstract: LM103 7702806XA
    Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.0-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a


    Original     		PDF MNLM103-3 LM103 100uA 400uA LM103 zener 7702806XA

    marking K1 sot363

    Abstract: DBAV99 bav99 diode Diode BAV99 SOT23 Electronic Designs bav99 BAV99L BAV99 SOT 23 DATA SHEET Diode bav99 sot a1 BAV99-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package Lead-free: BAV99L Halogen-free:BAV99G For 6 Pin Package „ ORDERING INFORMATION Normal BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99-AL6-R Ordering Number


    Original     		PDF BAV99 BAV99L BAV99G BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99-AL6-R BAV99L-AE3-R BAV99L-AL3-R BAV99L-AN3-R marking K1 sot363 DBAV99 bav99 diode Diode BAV99 SOT23 Electronic Designs bav99 BAV99L BAV99 SOT 23 DATA SHEET Diode bav99 sot a1 BAV99-AE3-R

    LM103 zener

    Abstract: LM103 LM103H MNLM103-3 zener diode mv 5 SMD ZENER DIODE 0,5w
    Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.3-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a


    Original     		PDF MNLM103-3 LM103 100uA 400uA LM103 zener LM103H zener diode mv 5 SMD ZENER DIODE 0,5w

    LM103 zener

    Abstract: zener diode mv 5 LM103H-3.6-SMD LM103
    Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.6-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a


    Original     		PDF MNLM103-3 LM103 100uA 400uA LM103 zener zener diode mv 5 LM103H-3.6-SMD

    LM103

    Abstract: 351 zener diode LM103 zener SMD ZENER DIODE 0,5w
    Text: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.9-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a


    Original     		PDF MNLM103-3 LM103 100uA 400uA 351 zener diode LM103 zener SMD ZENER DIODE 0,5w

    marking K1 sot363

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE  EQUIVALENT  ORDERING INFORMATION Ordering Number BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R Note: Pin Assignment: A: Anode  Package SOT-23 SOT-323 SOT-523 SOT-363


    Original     		PDF BAV99 BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R OT-23 OT-323 OT-523 OT-363 OT-23 marking K1 sot363

    BAV99

    Abstract: BAV99G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package For 6 Pin Package „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R BAV99L-AN3-R BAV99G-AN3-R


    Original     		PDF BAV99 BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R BAV99L-AN3-R BAV99G-AN3-R BAV99L-AL6-R BAV99G-AL6-R OT-23 BAV99 BAV99G-AE3-R

    XB01SB04A2BR

    Abstract: No abstract text available
    Text: XB01SB04A2BR ETR1601_001 Schottky Barrier Diode 1A, 40V Type •GENERAL DESCRIPTION XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.


    Original     		PDF XB01SB04A2BR ETR1601 XB01SB04A2BR OD-123 OD-123

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number


    Original     		PDF BAV99 OT-23 BAV99L BAV99-AE3-R BAV99L-AE3-R QW-R601-005

    Untitled

    Abstract: No abstract text available
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220

    150a gto

    Abstract: QS 100 NPN Transistor 200H KSC5603D
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220 150a gto QS 100 NPN Transistor 200H KSC5603D

    KSC5302DM

    Abstract: No abstract text available
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


    Original     		PDF KSC5302DM O-126 KSC5302DM

    j5304d

    Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
    Text: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit


    Original     		PDF FJD5304D FJD5304D j5304d transistor j5304d j5304 FJD5304DTM J530 FJD5304DTF fjd5304

    Untitled

    Abstract: No abstract text available
    Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. !Equivalent circuit (3) (2) (1) Tr2 (4) Di1 (6) !Packaging specifications Type UML6N UMT5 Package L6 Marking


    Original     		PDF 2SA2018 RB521S-30 SC-88A

    KSC5302DM

    Abstract: surgical spirit KSC5302D
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


    Original     		PDF KSC5302DM O-126 KSC5302DM surgical spirit KSC5302D

    KSC5302DM

    Abstract: No abstract text available
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


    Original     		PDF KSC5302DM O-126 KSC5302DM

    Untitled

    Abstract: No abstract text available
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


    Original     		PDF KSC5302DM O-126

    Untitled

    Abstract: No abstract text available
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


    Original     		PDF KSC5302DM O-126 KSC5302DMTU KSC5302DMSTU KSC5302DM

    j5304d

    Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
    Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit


    Original     		PDF FJU5304D FJU5304D j5304d J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list transistor j5304d

    Untitled

    Abstract: No abstract text available
    Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2


    Original     		PDF 2SK3711 T02-002EA-051124

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E