em 518 diode
Abstract: em 513 diode diode em 513 diode 1600 rectifier
Text: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A
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em 518 diode
Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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diode em 513
Abstract: em 518 diode
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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Untitled
Abstract: No abstract text available
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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DIODE RK 69
Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Text: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal
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019-BEN
SE820256)
SE-721
DIODE RK 69
BA rx transistor
111-BA
ba rx
varistor 741
CD 741
741 CN
abb combiflex
rtxe
em 513 diode
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mst 702 lf
Abstract: OLD232 INFRARED DIODES OLD232-2 light emitting diode general 910nm
Text: OKI electronic components OLP232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light em ission m icro-diode sealed w ith a glass lens in a highly reliable metal can on a TO-46 type stem . Its light em ission w a v e peaks at 910 nm.
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OLD232-2
OLD232-2
mst 702 lf
OLD232
INFRARED DIODES
light emitting diode general
910nm
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DSA20T
Abstract: DSA20TB DSA20TC DSA20TE DSA20TG DSA20TJ DSA20TL
Text: Ordering number :EN2408 _ D S A 2 0 T No.2408 Diffused Junction Type Silicon Diode 2.0A Power Rectifier Junction Tem perature Storage T em perature II P eak Reverse Voltage V rm Average Rectified C urrent Io Surge Forward C urrent Ifsm rfsoo o a t Ta - 25°C
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EN2408
DSA20T
DSA20TB
DSA20TC
DSA20TE
50Hzsine
DSA20TG
DSA20TJ
DSA20TL
DSA20T
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tlp721gb
Abstract: tlp721 MARKING TLP721F
Text: TLP721 GaAs IRED & PHOTO-TRANSISTOR T L P 7 2 1 O FFIC E M A C H IN E . H O U S E H O L D USE E Q U IP M E N T . S O L ID ST A T E R ELA Y. S W IT C H IN G P O W E R SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic
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TLP721
TLP721
UL1577,
E67349
BS415
BS7002
EN60950)
SS4330784
4000Vrms
E0884/06
tlp721gb
MARKING TLP721F
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SMD DIODE 513
Abstract: No abstract text available
Text: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V
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1N4001.
1N4007,
1N4007-1300
DO-41
UL94V-0
40eel
R0D1RS14
000017S
SMD DIODE 513
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Mosfet K 135 To3
Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Text: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness
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cib414E
00DS1B4
IRF430/431/432/433
IRF330
IRF331
IRF332
IRF333
98D05134
IRF430
IRF431
Mosfet K 135 To3
432Z
til 431
IRF432
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV74 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification BAV74 High-speed double diode FEATURES DESCRIPTION
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BAV74
BAV74
115002/00/03/pp12
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double diode SMD A7p
Abstract: smd code A7p A7P smd a7p smd diode smd A7p diode A7p bav 17 diode A7P DIODE
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION
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BAV99
BAV99
115002/00/03/pp12
double diode SMD A7p
smd code A7p
A7P smd
a7p smd diode
smd A7p
diode A7p
bav 17 diode
A7P DIODE
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION
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BAW56W
BAW56W
115002/00/04/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION
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BAW56
BAW56
115002/00/03/pp12
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smd p5c
Abstract: smd AYA
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD7000 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD7000 FEATURES
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PMBD7000
PMBD7000
115002/00/03/pp12
smd p5c
smd AYA
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification General purpose diode BAS321 FEATURES PINNING • Sm all plastic SM D package PIN DESCRIPTION • S w itching speed: max. 50 ns 1 cathode • G eneral application
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BAS321
BAS321
115002/00/01/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips S e m ico n d u cto rs 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES
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BAV99W
BAV99W
115002/00/04/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES
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BAS516
BAS516
MAM408
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT PMBD6050 High-speed diode Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION • Sm all plastic SM D package
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PMBD6050
PMBD6050
115002/00/03/pp12
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t5d diode
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Sm all plastic SM D package The P M B D 914 is a high-speed
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PMBD914
115002/00/03/pp12
t5d diode
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diode AY 101
Abstract: BAL74W
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAL74W High-speed diode 1999 May 05 Product specification Supersedes data of 1996 Sep 03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAL74W FEATURES DESCRIPTION • V ery sm all plastic S M D package
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BAL74W
BAL74W
SCA64
5002/00/04/pp1
diode AY 101
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Untitled
Abstract: No abstract text available
Text: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.
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I50F-060
I75F-060
2MBI100F-060
2MBI50L-060
2MBI75L-060
2MBI100L-060
2MBI150L-060
2MBI150LB-060
2MBI200L-060
2MBI200LB-060
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1PS59SB21
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB21 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21
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1PS59SB21
1PS59SB21
SC-59
MSA314
115104/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche
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BAS29;
BAS31;
BAS35
BAS31
BAS35
BAS29
115002/00/03/pp12
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