ZENER 6.2V DO-214AC
Abstract: No abstract text available
Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
|
Original
|
PDF
|
SML4728
SML4763A
DO-214AC
25ALS
ZENER 6.2V DO-214AC
|
X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors
|
Original
|
PDF
|
X9520
L22329
X9522
FN8208
X9522
X9522V20I-A
X9522V20I-B
X9522V20IZ-A
X9522V20IZ-B
|
SK30GH123
Abstract: No abstract text available
Text: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5?
|
Original
|
PDF
|
SK30GH123
SK30GH123
|
SK30GH123
Abstract: No abstract text available
Text: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5?
|
Original
|
PDF
|
SK30GH123
SK30GH123
|
zener alternator rectifier
Abstract: 5551T
Text: DESIGN TIP DT 99-6 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Intelligent Power Switches IPS : Operation in an Automotive Environment By X. de Frutos and A. Mathur TOPICS COVERED Ground loss Ground offset Voltage peaks Reverse battery conditions
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
MJD122
300uS,
|
Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSH200 D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
KSH200
|
Untitled
Abstract: No abstract text available
Text: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
MJD117
|
sq-10a
Abstract: KSH117 TIP117
Text: KSH117 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
KSH117
TIP117
EmittKSH117
-OJ52
sq-10a
TIP117
|
TRANSISTOR tip122
Abstract: KSH122 TIP122 Darlington NPN Silicon Diode
Text: KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
KSH122
TIP122
TRANSISTOR tip122
TIP122
Darlington NPN Silicon Diode
|
KSH127
Abstract: TIP127
Text: KSH127 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
KSH127
TIP127
300ns,
TIP127
|
KSH112
Abstract: TIP112
Text: KSH112 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
|
OCR Scan
|
PDF
|
KSH112
TIP112
300ns,
TIP112
|
LN25
Abstract: LN250RPH
Text: pp Í& l=P Checked Checked tft ¡t#J 5Ë Approved it $ LN2 5 ORPH Kà ÍBU/TYPE A Æ jÉ/A PPLIC A TIO N # P it/S T R U C T U R E GaP K G aP /R ed Light Emitting Diode(GaP) ^ /In d ic a to r s ¿^ /O U T L IN E HI/Attached Üê Me ± JÈ ABSOLUTE MAXIMUM
|
OCR Scan
|
PDF
|
P13-5
MIL-STD-19500HLTPD:
19500H
P13-6
P13-7-10
P13-11-12
P13-13
LN25
LN250RPH
|
IN5288
Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Text: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :
|
OCR Scan
|
PDF
|
Cf5283
Cf5314
IN5288
IN5305
IN5309 diode
0107MA
IN5309
1N5298 equivalent
CNS 022
1N5305 equivalent
1N5286
IN5283
|
|
|
FMMD914
Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film
|
OCR Scan
|
PDF
|
OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
FMMD914
FMMD6050
Z6 DIODE
FMMD
marking Z1 sot
ZC830B
BAL99
BAR99
sot-23 MARKING CODE A4
BAV70
|
Untitled
Abstract: No abstract text available
Text: • MbflbEEb 0 0 ü l 7 0 b 7ST « I X Y n ix Y S MDD72 Diode Modules lTAV = 2 x 99 A i < < VRRM = 400-1800 V 500 700 900 1300 1500 1700 1900 Vrrm V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD72-04N1 MDD72-06N1 MDD72-08N1 MDD72-12N1 MDD72-14N1 MDD72-16N1
|
OCR Scan
|
PDF
|
MDD72
MDD72-04N1
MDD72-06N1
MDD72-08N1
MDD72-12N1
MDD72-14N1
MDD72-16N1
MDD72-18N1
|
1n728 DO-4
Abstract: in823 IN751 in822 mic in2829 1N2163 1N8272 1N736 in821a in823a
Text: V . X S ¡1 II *< 5: x =3£= tt — « S. =/>2= C V 999 Il C O 't r s o o o o o o o o o o o d d r t cd in o od in c\i in r s 00 C l ^ C SË i II o o o NÛ-? o o o OOO q o ° odd o o o «5SO 00 O'. CM cm o r s in t—I CM CM a> r s •-i in o o o o o o n i co o
|
OCR Scan
|
PDF
|
1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
1n728 DO-4
in823
IN751
in822 mic
in2829
1N2163
1N8272
1N736
in821a
in823a
|
keypad diode matrix
Abstract: telephone handset circuit schematic diagram RM9910
Text: REPERTORY DIALLER Rfl 9910 The repertory dialler, RM 9 910 is a u- pr oc es sor , progr am me d to perform as a pulse dialler, DTMF controller and di sp la y driver in a mu l t i p u r p o s e t e l ep hon e set. The RM 9 910 has redial and save registers of 32 digit
|
OCR Scan
|
PDF
|
|
D1G-22-8-30-DD
Abstract: No abstract text available
Text: Photovoltaic M OSFET D river with active Dynam ic Discharge* DIG-11-8-30-DD DIG-12-8-30-DD DIG -22-8-30-DD Dionics Inc. 65 Rushmore Street W estbury, New York 11590 516 997-7474 FAX: (516) 997-7479 ♦FEATURES* * * * * * * * * •APPLICATIONS* FAST TURN OFF, ACTIVE GATE DISCHARGE
|
OCR Scan
|
PDF
|
DIG-11-8-30-DD
DIG-12-8-30-DD
-22-8-30-DD
25ohfii
0IG-n-a-30-D
D1G-22-8-30-DD
|
Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S DS4680-4.1 TA329.Q ASYMMETRIC THYRISTOR APPLICATIONS KEY PARAMETERS 1400V DRM 370A -T RMS 2000A ^SM dVdt 1 0 0 0 V / ( is 1000A /H S dl/dt • High Frequency Applications. ■ High Power Choppers And Inverters.
|
OCR Scan
|
PDF
|
DS4680-4
TA329.
400Hz
40kHz.
37b6S22
|
CDST-56-G
Abstract: CDST-70-G CDST-99-G sk sot-23
Text: COAICHII» Small Signal Switching Diodes SMQDIodes S pocialisi CDST-99-G/ 70-G/ 56-G Reverse Voltage: 70 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge
|
OCR Scan
|
PDF
|
CDST-99-G/
200mA
OT-23,
MIL-STD-750,
CDST-99-G
CDST-70-G
CDST-56-G
OT-23
QW-B0002
CDST-56-G
sk sot-23
|
sn76881
Abstract: SN76882 sfb 455 sn76832n sn7689 tms 1000 Bf sn 881 76831N24
Text: SN76741N/SN76751N 1 MAIN FEATURES — Serial data encoding for TMS 1000 or TMS 9940 decode. — 64 + 64 Channel capacity. — Direct drive of IE emitters. — — Ceramic resonator controlled oscillator. 6 to 9 volt battery operation.* — Automatic m^rrm transmission of four codes.
|
OCR Scan
|
PDF
|
SN76741N/SN76751N
SN76741N/
SN76751N
SN76891*
SN76882
200ms
SN76832N
sn76881
sfb 455
sn7689
tms 1000
Bf sn 881
76831N24
|
Untitled
Abstract: No abstract text available
Text: F IL M PILri microelectronics z ^ M IC R O ELE C TR O N IC S Fm * If'IW a The Ultimate i i Miaoelectronic Packaging and Interconnect Technology 108 Centennial Drive. Peatxxv. MA 01960, USA • TEL: S08| S31-8901. FAX (508 S32-9954 M I L S T D - 1 7 7 2 Q u a lifie d
|
OCR Scan
|
PDF
|
S31-8901.
S32-9954
3S7S74S
28-ch
|
1N725
Abstract: 1N937 1N743 IN821 in825 1N717 1N718 1N719 1N721 1N722
Text: 0Os" vO0s OU O V . X S o '' c S ov' d ' - i ' ' 5^0? in in in <\l C\J CM ¡1 II S. 999 5: x =3 £= = 2= C/> V O CO * uE £ =£ o o o «Si -g< = > ro in C CM CO »3- o OO O q o ° o o o odd o o o «5SO o o o NÛ-? o r s in o O o t— I— h- G O O O O O O \ 0 O'-
|
OCR Scan
|
PDF
|
1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
1N937
1N743
IN821
in825
|
