Untitled
Abstract: No abstract text available
Text: T UC T R O D A C EM EN a t P E r T L e E P t OL RE Ce n O B S E N D ED port l.com/tsc p u M S i l M nica w.inters ECO echData R Sheet O T w N w ur I L or act o cont -INTERS 8 1-88 Temperature Compensated Laser Diode Controller FEATURES • Compatible with Popular Fiber Optic Module
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2176-bit
FN8211
X9530
14-Lead
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LT028
Abstract: LT022MC LT022PD LT027 LASER LT024MD LT022MC laser diode LT025 lt027 LT015MF LT022
Text: Laser Diode Quick Guides~ypicaI Characteristics x x x x x x x x x x x x x I x x x x x x Quick Guide I [ Model No. ~- - . -n .,. x ., Conformable to No.84zuud/ 01 FUA u >.A .- Wavelength (rim) 750 LT030 series LT021 series LT022 series ~“-: LT023 series
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84zuud/
LT030
LT021
LT022
LT023
LT024
-LT024
LT025
LT026
LT027
LT028
LT022MC
LT022PD
LT027 LASER
LT024MD
LT022MC laser diode
LT015MF
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TXC-21055
Abstract: 1N4148 1N914 IN4148 IN914 TXC-02050 8448-kbit txc 24.5 G753
Text: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448
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34-Mbit/s
TXC-02050
TXC-02050-MB
TXC-21055
1N4148
1N914
IN4148
IN914
TXC-02050
8448-kbit
txc 24.5
G753
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g745
Abstract: No abstract text available
Text: BACK MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448
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34-Mbit/s
TXC-02050
TXC-02050-MB
g745
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TXC-21055
Abstract: E2 hdb3 1N4148 1N914 IN4148 IN914 TXC-02050 nom401
Text: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448
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34-Mbit/s
TXC-02050
TXC-02050-MB
TXC-21055
E2 hdb3
1N4148
1N914
IN4148
IN914
TXC-02050
nom401
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m 841
Abstract: D291S
Text: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties
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D291S
Abstract: d291 3000a7 D841 D 841 S 45 T
Text: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ø7 C A ø3,5± ø77 0,1 48- 0,1 Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode Fast Diode
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Untitled
Abstract: No abstract text available
Text: APT80M60J 600V, 84A, 0.055 N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT80M60J
E145592
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D291S
Abstract: m 841 3000a7
Text: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties
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TXC-02054
Abstract: E2 hdb3 TXC-02054-MB uses of 0.1 MICROFARAD ceramic disk TXC-02054AIPL HDB3 nrz e2 1N4148 1N914 74ACT11244 PE-65966
Text: MRTE Device 8-, 34- Mbit/s Line Interface TXC-02054 FEATURES DESCRIPTION • 8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit E2/E3 MRTE Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T
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TXC-02054
TXC-02054-MB
TXC-02054
E2 hdb3
TXC-02054-MB
uses of 0.1 MICROFARAD ceramic disk
TXC-02054AIPL
HDB3 nrz e2
1N4148
1N914
74ACT11244
PE-65966
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JT-G703
Abstract: No abstract text available
Text: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C DATA SHEET DESCRIPTION • 6312/8448/34368 kbit/s line interface • AGC and equalizer • Line quality monitor 10-6 error rate threshold • Receive loss of signal and transmit loss of clock alarms
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TXC-02050C
44-pin
844ication.
TXC-02050C-MB
JT-G703
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Untitled
Abstract: No abstract text available
Text: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,
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TXC-02050C
TXC-02050C-MB
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txc 24.5
Abstract: E2 hdb3 TXC-21055 1N4148 1N914 AN-517 PE-65966 TXC-02050C ME502B A2917
Text: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,
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TXC-02050C
TXC-02050C-MB
txc 24.5
E2 hdb3
TXC-21055
1N4148
1N914
AN-517
PE-65966
TXC-02050C
ME502B
A2917
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties
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EE-25 transformer
Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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APT30D100B
APT30D90B
APT30D80B
O-247
O-247AD
EE-25 transformer
Transformer EE-25
Transformer EE-25 100
EE-25 200 6 transformer
CR diode transient
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FMMD914
Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film
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OCR Scan
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OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
FMMD914
FMMD6050
Z6 DIODE
FMMD
marking Z1 sot
ZC830B
BAL99
BAR99
sot-23 MARKING CODE A4
BAV70
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Untitled
Abstract: No abstract text available
Text: MRT Device X co u w 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION ' = = The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the func tions needed for terminating two CCITT line rates, 8448
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OCR Scan
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PDF
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34-Mbit/s
TXC-02050
TXC-02050-MB
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Untitled
Abstract: No abstract text available
Text: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •
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GP1600FSS12S
DS4337
190ns
840ns
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GP1200FSS12S
Abstract: No abstract text available
Text: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.
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GP1200FSS12S
DS4547
190ns
840ns
GP1200FSS12S
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General Semiconductor diode marking sma
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A444
Text: PRODUCT INFORMATION 840nm 1A444 VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi tudinal mode, ensuring stable cou
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840nm
1A444
1-800-96MITEL
General Semiconductor diode marking sma
ON SEMICONDUCTOR 613
top marking 293
1A444
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transistor 6cw
Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7450
IRH845Q
1x106
1x105
IRH7450,
IRH84S0
transistor 6cw
6cw transistor
6CW 60
6CW 62
rover
IRH7450
IRH8450
TO404AA
6CW 75
100 amp silicon controlled rectifier
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8527
Abstract: marking 293 ON SEMICONDUCTOR 613 top marking 293 1A448 1A448A PIN diode 12 GHz
Text: PRODUCT INFORMATION 840nm 1A448 Datacom VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet and ATM applications. For eye safety, the opti cal pow er is attenuated to com ply with IEC Laser Class 1 requirements.
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840nm
1A448
1A448
1A448A
1-800-96MITEL
8527
marking 293
ON SEMICONDUCTOR 613
top marking 293
1A448A
PIN diode 12 GHz
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3416C
Abstract: No abstract text available
Text: M R T Devi ce 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SH EE T FE ATURES ^ DESCRIPTION • 6312/8448/34368 kbit/s line interface - The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the func tions needed for terminating two CCITT line rates, 8448
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OCR Scan
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PDF
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34-Mbit/s
TXC-02050
TXC-02050-M
3416C
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diode 3a05
Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Text: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050
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1IN4139-1N4145
1N4139
1N4140
1N4141
1N4142
1N4143
1N4144
1N4145
1N4139-1N4145
diode 3a05
3a05
diode IN4142
3A05 Diode
diode with PIV 200
1N4145
COLOR MARKING CODE ON DIODE
IN4142
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