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    DIODE ED 15 Search Results

    DIODE ED 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ED 15 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hp11612a

    Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
    Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑


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    5091-4932E 5966-0780E order50 hp11612a anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473 PDF

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    LN189S LN189S PDF

    ED 05 Diode

    Abstract: ED 03 Diode
    Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs


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    RM25HG-24S 20MIN. ED 05 Diode ED 03 Diode PDF

    ED 05 Diode

    Abstract: ED 03 Diode
    Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs


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    RM50HG-12S 20MIN. ED 05 Diode ED 03 Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPRTR5V0U4D Preliminary DIODE I N T EGRAT ED QU AD U LT RA-LOW CAPACI T AN CE ESD PROT ECT I ON ̈ DESCRI PT I ON The UTC UPRTR5V0U4D is an integrated quad ultra-low capacitance ESD protection diode array. it uses UTC’s advanced


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    100nA) QW-R601-077 PDF

    Panasonic circuit breaker

    Abstract: TPS2330 EEUFC1H471L IRF7413 TPS2331 SLVA116
    Text: Application Report SLVA116 – May 2002 A FET OR-ing Circuit For Fault-Tolerant Power Systems Ed Jung PMP Systems Power ABSTRACT Fault-tolerant power systems commonly achieve redundancy by diode OR-ing the outputs of several power supply modules. The OR-ing circuit is inefficient if the diode forward


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    SLVA116 TPS2331 Panasonic circuit breaker TPS2330 EEUFC1H471L IRF7413 SLVA116 PDF

    fire detector

    Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
    Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).


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    ED-95093 GL1F201 fire detector 100HZ 1U20 47PF GL1F201 IS1U20 PDF

    BUK657-500B

    Abstract: et 25 diode
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery


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    BUK657-500B T0220AB BUK657-500B et 25 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers


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    APT2X30D60J OT-227 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply


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    APT15D100K O-220 O-22QAC PDF

    ca3141e

    Abstract: No abstract text available
    Text: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A


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    CA3141 CA3141E CA3141 16-lead PDF

    epitaxx

    Abstract: No abstract text available
    Text: epitaxx inc IDE D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r


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    EDL1300CD -FC/EDL1300FJ-S L1300CD EDL1300FJ-S/M EDL1300CD EDL1300CD: 1300CD EDL1300FJ-S EDL1300CD-FC epitaxx PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode


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    APT2X100D60J OT-227 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode


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    APT30D100B APT30D90B APT30D80B O-247AD 3000-sso PDF

    selfoc

    Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
    Text: epitaxx inc I D E D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r


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    EDL1300CD-FC EDL1300FJ-S/M: EDL1300CD 33bU4Ub EDL1300CD-FC /EDL1300FJ-S 1300CD EDL1300FJ-S selfoc EPITAXX SMF.300 EDL1300CD EDL1300FJ-S PDF

    marking 531 121

    Abstract: S1 DIODE schottky diode MARKING CODE 4b
    Text: Central Semiconductor Corp. C M D S H -3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, d e sign ed fo r fa s t s w itch in g applications requiring a low forward voltage


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    OD-323 100jiA 100mA G0G1771 marking 531 121 S1 DIODE schottky diode MARKING CODE 4b PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


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    MGP11 N60ED/D MGP11N60ED/D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and


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    NDL3220, NDL3220S L3220 IEI-1209) PDF

    zener diode 1N PH 48

    Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
    Text: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503


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    RH821-829, RH3154-3157A, RH935-939B, RH941-944B RH3501-3504 RH4890-4895A. AZRH8825 zener diode 1N PH 48 zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with


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    VTL23G2B, 23G3B PDF

    H11L

    Abstract: H11L2 RE12 H11L1 H11L3
    Text: OPTOELECTRONICS MICROPROCESSOR COMPATIBLE GaAs SCHMITT TRIGGER OPTOCOUPLERS H11L1 H11L2 H11L3 PACKAGE DIMENSIONS The H11L series has a m edium -to-high sp e ed integrated circuit detector optically couple d to a gallium -arsenide infrared emitting diode. The output incorporates a


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    H11L1 H11L2 H11L3 ST2069 ST2070 ST2015 ST2016 ST2017 H11L RE12 H11L3 PDF

    CLM185T2

    Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
    Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q


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    CLM185-2 CLM285-2 CLM385-2 CLM185 20yiA CLM185T2 CLM285T2 CLM285d. 4432E CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package


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    ENN6966 EC2C01C EC2C01C] ECSP1008-2 PDF

    GL3201

    Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
    Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun­ ed coil • Internal Zener diode regulated supply • Inherent high stability


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    GL3201A/GL3202 GL3201A GL3202 L3201A/GL3202 GL3201 GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320 PDF