hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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Panasonic circuit breaker
Abstract: TPS2330 EEUFC1H471L IRF7413 TPS2331 SLVA116
Text: Application Report SLVA116 – May 2002 A FET OR-ing Circuit For Fault-Tolerant Power Systems Ed Jung PMP Systems Power ABSTRACT Fault-tolerant power systems commonly achieve redundancy by diode OR-ing the outputs of several power supply modules. The OR-ing circuit is inefficient if the diode forward
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SLVA116
TPS2331
Panasonic circuit breaker
TPS2330
EEUFC1H471L
IRF7413
SLVA116
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V23134-A1052-X299
Abstract: "Power Relay"
Text: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar
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V23134-A1052-X299
3D40HB30
volt40
V23134-A1052-X299
"Power Relay"
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S K C TO PIN Diode SP2T S SP2T ED MODEL NO. DS0052 10 - 2000 MHz TTL Driver Non-Reflective 14 Pin DIP See CDS0622 or 100C1558 for Connectorized Versions PART IDENTIFICATION +5V 14 .87 GND 13 GND 12 "0" CONTROL 11 GND 10 GND 9 N/C 8 6 GND 7 RF2
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CDS0622
100C1558
DS0052
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epitaxx
Abstract: No abstract text available
Text: epitaxx inc IDE D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r
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EDL1300CD
-FC/EDL1300FJ-S
L1300CD
EDL1300FJ-S/M
EDL1300CD
EDL1300CD:
1300CD
EDL1300FJ-S
EDL1300CD-FC
epitaxx
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selfoc
Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
Text: epitaxx inc I D E D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r
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EDL1300CD-FC
EDL1300FJ-S/M:
EDL1300CD
33bU4Ub
EDL1300CD-FC
/EDL1300FJ-S
1300CD
EDL1300FJ-S
selfoc
EPITAXX
SMF.300
EDL1300CD
EDL1300FJ-S
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BUK657-500B
Abstract: et 25 diode
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery
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BUK657-500B
T0220AB
BUK657-500B
et 25 diode
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
Text: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.
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SLD201
SLD201U
SLD201V
720kHz
30kHz
SLD201U/V
SLD201V
SLD201U
TO50 package
noise diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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zener diode 1N PH 48
Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
Text: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503
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RH821-829,
RH3154-3157A,
RH935-939B,
RH941-944B
RH3501-3504
RH4890-4895A.
AZRH8825
zener diode 1N PH 48
zener diode 1N PH 44
1X1018
RH4895
1N4915A
RH4895A
RH939
1N4057
1N4085A
1N4565
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Untitled
Abstract: No abstract text available
Text: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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hb5-132
Abstract: S370 S370 UDT
Text: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the
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HB5-132
hb5-132
S370
S370 UDT
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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DSAIH0002570
Abstract: No abstract text available
Text: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135
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1N140_
MIL-S-19500,
DSAIH0002570
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L1323
Abstract: 1323T
Text: HL1323TR Laser Diode Description H L 1323T R is a 1.3 ¿im In G aA sP laser diode with d o u b le h etero ju n ctio n structure. It is su itable as a light source in short- to interm ed iate-d istan ce fiberoptic co m m u n icatio n s sys te m s, e.g. L A N , C A T V and LJN.
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HL1323TR
1323T
L1323
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IS44
Abstract: No abstract text available
Text: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control
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8C443
IS44
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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Untitled
Abstract: No abstract text available
Text: OPTO DIODE CORP SSE D • bflOmfl OODDOTM 13T ■ O P D ^ d / / ' - f j > HIGH TEMPERATURE GaAIAs IR EMITTERS OD-88OLHT FEATURES • E xten d ed operating tem perature ran ge • High reliability eutectic preform die attach • No internal co atin gs • 10 0 % test for minimum p o w er requirem ent
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OD-88OLHT
OD-88O-C
OD-88OLHT
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