X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors
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X9520
L22329
X9522
FN8208
X9522
X9522V20I-A
X9522V20I-B
X9522V20IZ-A
X9522V20IZ-B
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Untitled
Abstract: No abstract text available
Text: T UC T R O D A C EM EN a t P E r T L e E P t OL RE Ce n O B S E N D ED port l.com/tsc p u M S i l M nica w.inters ECO echData R Sheet O T w N w ur I L or act o cont -INTERS 8 1-88 Temperature Compensated Laser Diode Controller FEATURES • Compatible with Popular Fiber Optic Module
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2176-bit
FN8211
X9530
14-Lead
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YA846C04B
Abstract: B-111A
Text: DATE CHECKED SEP.-05-‘03 SEP.-05-‘03 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any t h ird pa rt y n o r u s ed f o r th e m an uf a c tu rin g p u rp o se s wit h o u t
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YA846C04B
MS5D1917
H04-004-07
H04-004-03
YA846C04B
B-111A
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10N90
Abstract: No abstract text available
Text: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
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FMW10N90G
MS5F6287
H04-004-05
H04-004-03
10N90
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16N60G
Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Text: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
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FMW16N60G
MS5F6146
H04-004-05
H04-004-03
16N60G
HER 107 diode
HER 103 diode
FMW16N60G
16N60
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intel 7882
Abstract: Xtensa PHAST-12E TXC-05802B TXC-05806 TXC-05810 TXC-06212 TD240
Text: ASPEN Express Device Multi-PHY CellBus Access Device TXC-05806 DESCRIPTION • 622 Mbit/s bi-directional throughput • UTOPIA Level 1/2 interface 8/16-bit with support for 64/124 ports at 50 MHz • OAM Fault Management per ITU-T I.610 • UPC/NPC policing on ingress compliant with
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TXC-05806
8/16-bit)
TXC-05806-MB
intel 7882
Xtensa
PHAST-12E
TXC-05802B
TXC-05806
TXC-05810
TXC-06212
TD240
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07N90G
Abstract: 07N90 fmw07n90g
Text: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
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FMW07N90G
MS5F6285
H04-004-05
H04-004-03
07N90G
07N90
fmw07n90g
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Untitled
Abstract: No abstract text available
Text: ASPEN Express Device Multi-PHY CellBus Access Device TXC-05806 DATA SHEET APPLICATIONS • • • • • ATM Access Multiplexers DSLAM Applications Remote Access Equipment ATM LAN Switch Frame Relay Switch Connection Table SDRAM 15 Row/Col Data Addr/Ctl
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TXC-05806
8/16-bit)
TXC-05806-MB,
TXC-05806
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Untitled
Abstract: No abstract text available
Text: ASPEN Express Device Multi-PHY CellBus Access Device TXC-05806 DATA SHEET PRODUCT PREVIEW APPLICATIONS • • • • • ATM Access Multiplexers DSLAM Applications Remote Access Equipment ATM LAN Switch Frame Relay Switch Connection Table SDRAM 15
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TXC-05806
8/16-bit)
TXC-05806-MB
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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Untitled
Abstract: No abstract text available
Text: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT15D100K
O-220
O-22QAC
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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DBA10
Abstract: No abstract text available
Text: IOrdering number:EN64SD D B A 10 Diffused Junction Silicon Diode SAfÊYOI V jJ v Features %<• Package Dimensions * Plastic m olded structure. * Peak reverse v u lta g c iV ^ M '^ ^ to GOOV *Average reclin ed curren l:I q ~I.OA , unit: mm .// 1093 / / / /
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DBA10
DBA10
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anods Back of Caaa -Cathoda APT30D40B 400V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS > Anti-Parallel Dloda -Switchmoda Power Supply -Invartars
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APT30D40B
O-247
O-247AD
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ip olivetti cd
Abstract: GL100MD1MP1 GL100MD1
Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.
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ED-02157
GL100MD1MP1
ip olivetti cd
GL100MD1
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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stetron
Abstract: No abstract text available
Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode
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VT60D\SICVAR
SDL-080-131
SDL-098-231
100mA:
stetron
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EE-25 transformer
Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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APT30D100B
APT30D90B
APT30D80B
O-247
O-247AD
EE-25 transformer
Transformer EE-25
Transformer EE-25 100
EE-25 200 6 transformer
CR diode transient
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Untitled
Abstract: No abstract text available
Text: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •
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YG802C
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ks823c
Abstract: No abstract text available
Text: FUJI '95 No.1£ [ s U , [ i È i i JjÇ àL:_ ~ ± m S e:m'-i-Go ri d u .ct o r N e W- P r ó d ü V 3 7 9 0 V /5 A SCHOTTKY BARRIER DIODE KS823C09 mm JH Features • i ; l £ l a nn S urface m ount device • Lew V f S Lper high spe ed sw itching Hi jh reliability by planer design
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KS823C09
301FI
ks823c
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NS1005
Abstract: No abstract text available
Text: ¿ O A d v a n c ed P o w er T e c h h o lo g t • * 1 • Cathode 2 -Anode Back of Caaa-Cathoda APT15D60B APT15D50B 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PR O D U C T A PP LIC A T IO N S P R O D U C T F E A TU RE S P R O D U C T B ENEFITS
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APT15D60B
APT15D50B
O-247
O-247AD
NS1005
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general electric
Abstract: 871 diode Scans-0017338 B825 VICTOREEN resistor instrument department general electric company
Text: — PRODUCT INFORMATION — Page 1 1DG3-A Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS Y jߣ$ • MONOCHROME TYPE > 22000 VOLTS DC ■ 0 .5 MILLIAMPERES DC ■ X-RADIATION RATING The 1DG3-A is a fila m e n ta ry dio d e de sig n ed fo r use in te le v is io n re c e iv e rs as the h ig h -v o lta g e r e c tifie r to s u p p ly
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F16H
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES T h e S D A 3 2 S c h o ttk y B a rrie r D io d e A rra y is d e s ig n e d to re d u c e re fle c tio n n o is e o n h ig h spe ed p a ra lle l d a ta lin e s. • T h e d e v ic e h e lp s s u p p re s s tra n s ie n ts cau sed
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SDA32
DIL20
SDA32
F16H
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Untitled
Abstract: No abstract text available
Text: ? LASER DIODE INC 1EE D I 5302^05 ÜGGG4M4 Ö | -p_ ca •■=■e ] IRE-830 SERIES LASER DIODE, INC. HIGH RADIANCE, HIGH SPEED 830nm SURFACE EMITTING LED FEATURES High Output Power: 1mW into 100/140 Fiber ► High Speed: Suitable for > 100 Mbps NRZ Operation
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IRE-830
830nm
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