PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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C26B
Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Text: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IE4
326A11
78F6F8
36F1322
A2CB36
CC236D
1231423567896AB
4112CD3567896EF
C26B
GDS C25/0
diode e61
GDS C25/1231423567896AB
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H6327
Abstract: E6327 PG-SCD80-2-1 UM-38 BB 555-02V E7912 BBY57-05W DIODE Sp marking code H7902 cu marking code diode SP000745054
Text: BBY57. Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • High capacitance ratio • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For control elements such as TCXOs and VCXOs
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BBY57.
BBY57-02L
BBY57-02V
BBY57-02W
BBY57-05W
BBY57-02W
SCD80
H6327
E6327
PG-SCD80-2-1
UM-38
BB 555-02V E7912
BBY57-05W
DIODE Sp marking code
H7902
cu marking code diode
SP000745054
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composition of material used in zener diode
Abstract: IEC-1000-4-2
Text: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05
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65 diode 1N
Abstract: IEC-1000-4-2 RSA6.1J4
Text: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05
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IEC-61000-4-2
Abstract: No abstract text available
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN zExternal dimensions Unit : mm zApplication Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 zFeatures 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
IEC-61000-4-2
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6.1EN
Abstract: IEC-61000-4-2
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
IEC-61000-4-2
150pF
6.1EN
IEC-61000-4-2
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E6327
Abstract: BBY59-02V cross BB857 BB831 BB689 BB664 V2 3N DIODE
Text: BB837/BB857. Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BB837/BB857.
BB837
BB857
OD323
SCD80
BB837/BBatching
BBY57-02W
BBY58-02W
E6327
BBY59-02V cross
BB857 BB831 BB689 BB664
V2 3N DIODE
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composition of material used in zener diode
Abstract: IEC-61000-4-2
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
composition of material used in zener diode
IEC-61000-4-2
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Untitled
Abstract: No abstract text available
Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.
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IXD2110/IXD2111
IXD2110/111B,
IXD2110/111
IXD2111
IXD211x
IXD2110
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diode e61
Abstract: ROHM 1SR159-200 ROHM 200V 200mA DIODE 110v zener 10w
Text: ESD Protection diode Silicon Epitaxial Planer RSA6.1EN Characteristic Peak Pulse-1(tp=10X1000µs) Peak Pulse Power-2(tp=8X20µs) DIMENSION (UNIT:mm) Limits 30W Ppk 200W Junction temperature Tj 150˚C Storage temperature Tstg -55~150°C 0.9±0.1 2.0±0.2
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10X1000
11nsec
50nsec
RB159L-400
diode e61
ROHM 1SR159-200
ROHM 200V 200mA DIODE
110v zener 10w
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Untitled
Abstract: No abstract text available
Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.
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IXD2110/IXD2111
IXD2110/111B,
IXD2110/111
IXD2111
IXD211x
IXD2110
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TRANSISTOR D2102
Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and
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TX-28/25/21MD4
TZS6EZ002
TZS7EZ006
TZS7EZ005
TRANSISTOR D2102
L3003 TRANSISTOR
ETP35KAN619U
L3005 TRANSISTOR
1SR124-4AT82
transistor D454
D362 TRANSISTOR
l3007
ma29ta5
TELEVISION EHT TRANSFORMERS
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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diode e61
Abstract: bidirectional zener diode
Text: High voltage/high energy of surge protection elements EMD UM 2 D5 It protect from surge current at lower voltage and higher speed than protection inside the varistor. These are the key parts to high reliability set. clamping voltage Vz TYPE No. package surge
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2012size)
1208size)
IEC6100042
150pF
diode e61
bidirectional zener diode
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XC6372E501P
Abstract: No abstract text available
Text: XC6372 Series Dual Mode [PWM/PFM] Step-up DC/DC Converters HP010199 • Applications ◆ CMOS Low Power Consumption ◆ Operating Voltage: 0.9V~10.0V ◆ Output Voltage Range: 2.0V~7.0V ◆ Output Voltage Accuracy: ±2.5% ◆ Selectable Oscillator Frequency:
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XC6372
HP010199
50kHz,
100kHz,
180kHz)
XC6372A301
XC6372E501P
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chip die npn transistor
Abstract: No abstract text available
Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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M68HC11EVBU
Abstract: smd diode S6 6D CRT Monitor repair schematic ASM-0100 itt cannon d subminiature 1n4148 ITT 12J8 ECHO schematic diagrams MC68HC11E9FN1 RESISTOR-10M OHM
Text: M68HC11EVBU/D REV 3 April 1997 M68HC11EVBU UNIVERSAL EVALUATION BOARD USER’S MANUAL Information contained in this document applies to REVision B M68HC11EVBU Universal Evaluation Boards. MOTOROLA Inc. 1990, 1997; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to
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M68HC11EVBU/D
M68HC11EVBU
M68HC11EVBU
smd diode S6 6D
CRT Monitor repair schematic
ASM-0100
itt cannon d subminiature
1n4148 ITT
12J8
ECHO schematic diagrams
MC68HC11E9FN1
RESISTOR-10M OHM
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diode cross reference e61
Abstract: 1SMB5937BT3G EMK212BJ106KG-T LM5001 FOD121 GRM188R71H103KA01D LM431 LM5001MA TMK212BJ105KG-T noise diode generator
Text: National Semiconductor RD-171 Robert Hanrahan December 2008 1.0 Design Specifications Inputs Output #1 Output #2 VinMin=9V Vout1=5V Vout2=-5V VinMax=30V Iout1=0.25A Iout2=0.25A 2.0 Design Description A very low noise differential power supply for split rail systems
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RD-171
LM5001
CSP-9-111S2)
CSP-9-111S2.
diode cross reference e61
1SMB5937BT3G
EMK212BJ106KG-T
FOD121
GRM188R71H103KA01D
LM431
LM5001MA
TMK212BJ105KG-T
noise diode generator
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CM200DY-12E
Abstract: CM200DY12E
Text: b4E m D 72T4b21 00Db744 344 * P R X CM200DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC Dual IGBTMOD £ M o d illo
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72T4b21
00Db744
CM200DY-12E
BP107,
Amperes/600
CM200DY12E
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LM393AH
Abstract: LM393 bistable multivibrator LM393AJ LM393 LM193 lm333
Text: LM193/LM293/LM393/LM2903 Nat iona I Semiconductor LM193/LM293/LM393/LM2903 Low Power Low Offset Voltage Dual Comparators General Description • ■ ■ ■ The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as
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LM193/LM293/LM393/LM2903
LM193/LM293/LM393/LM2903
LM193
TLM/5709-13
LM393AH
LM393 bistable multivibrator
LM393AJ
LM393
lm333
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