Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
|
Original
|
1N5408
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
|
Original
|
904nm-5mW
904nm
com/n904nm5m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 660nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 660nm output
|
Original
|
660nm-5mW
660nm
com/d660nm5m
|
PDF
|
CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
Text: Diode Arrays Diode “Quad” and 2 Individual Diodes CA3019 Applications and Features Analog Switch Balanced Modulator Diode Gate for Chopper Modulators Mixer Modulator Telemetry, Data Processing, Instrumentation, and Communications Equipment Excellent diode match
|
OCR Scan
|
CA3019
92CS-14254
10-Lead
92CS-15262
12-Lead
CA3039
CA3019
ICAN 5299
diode ring mixer
CA3039
MONOLITHIC DIODE ARRAYS
diode gate
|
PDF
|
Untitled
Abstract: No abstract text available
Text: US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 650nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 650nm output
|
Original
|
650nm-5mW
650nm
com/d650nm5m
|
PDF
|
109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
|
Original
|
M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
|
PDF
|
BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
|
Original
|
M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
|
PDF
|
BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
|
Original
|
M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
|
PDF
|
Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
|
PDF
|
Thyristor MCD
Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
K21-0120
K21-0180
K41-0150
K41-0150
Thyristor MCD
mdc 90-12
ABB thyristor modules
90-08io8
DIODE REDRESSEMENT
mcd 132
|
PDF
|
HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
|
Original
|
HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
|
PDF
|
BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
|
Original
|
BAP50LX
OD882T
sym006
BAP50LX
SMD MARKING CODE M 4 Diode
|
PDF
|
ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
|
OCR Scan
|
MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
|
PDF
|
|
|
105386
Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Text: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options
|
Original
|
4N/10
4N/41
105386
dek 1.5
47346-0001
WDK 2.5
105366
105396
105446
WDK 4N
10-588
102260
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065-Y
DocID026618
|
PDF
|
BY448
Abstract: BY458
Text: BY448.BY458 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • Glass passivated junction • Hermetically sealed package Applications High voltage rectification diode Efficiency diode in horizontal deflection circuits Mechanical Data
|
Original
|
BY448
BY458
MIL-STD-750,
BY448
D-74025
07-Jan-03
BY458
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
|
OCR Scan
|
NDL7001
NDL7001
b4S752S
b427525
b427525
|
PDF
|
SOD80C
Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an
|
Original
|
M3D121
BAS85
OD80C
OD80C
100H01
SOD80C
M3D121
BAS85
smd diode marking Av
100H01
smd diode package sod80
PHILIPS DIODE SOD80
marking 37 schottky
SMD 157 diode
diode smd marking V
|
PDF
|
