BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
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DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM100GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM150GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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LTC4098-3.6
Abstract: 6n36
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
6n36
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LTC4098-3.6
Abstract: 36A65 FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
36A65
FBC 320
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br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br b2d
br- b2d
br - b2d
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C 361CB3D 1322 14DDD" 2313BCBC36134#62332 36B4"3
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DZ3600S17K3
2313BCBC
223DB
86B56
1231423567896A42BCD6EF
54B36
3567896A42BCD6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$6233236 4C3
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DD800S33K2C
03265F
1231423567896AB2C3D6EF32
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F 36%1F&3D132214DDDC 2313FF3613462332364C3
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DD200S33K2C
13265F
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%6233236 4C3 &'6 6 *+ &'6(6 )*+
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DD1200S33K2C
03265F
1231423567896AB2C3D6EF32
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Powerex Power Semiconductors
Abstract: CD41 CD410830
Text: CD410830 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 30 Amperes/800 Volts A B 1 2 3 H K - DIA. (2 TYP.) G E D L - M5 THD (3 TYP.) E C A F CC410830 Dual Diode POW-R-BLOK™ Modules 30 Amperes/800 Volts
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CD410830
Amperes/800
CC410830
Powerex Power Semiconductors
CD41
CD410830
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Untitled
Abstract: No abstract text available
Text: CD410830 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 30 Amperes/800 Volts A B 1 2 3 H K - DIA. (2 TYP.) G E D L - M5 THD (3 TYP.) E C A F CD410830 Dual Diode POW-R-BLOK™ Modules 30 Amperes/800 Volts
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CD410830
Amperes/800
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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BAS70-4
Abstract: Diode marking CODE A2 sod523 BAS70 BAS70-04FILM BAS70-04WFILM BAS70-05FILM BAS70-06FILM BAS70FILM st c 323 a BAS70KFILM
Text: BAS70 Low capacitance, low series inductance and resistance Schottky diodes Features • ■ ■ ■ ■ ■ BAS70ZFILM Single Very low conduction losses Negligible switching losses Low forward and reverse recovery times Surface mount device Low capacitance diode
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BAS70
BAS70ZFILM
OD-123
BAS70JFILM
OD-323
BAS70KFILM
OD-523
BAS70FILM
BAS70
OD-123,
BAS70-4
Diode marking CODE A2 sod523
BAS70-04FILM
BAS70-04WFILM
BAS70-05FILM
BAS70-06FILM
BAS70FILM
st c 323 a
BAS70KFILM
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Untitled
Abstract: No abstract text available
Text: BAS70 Low capacitance, low series inductance and resistance Schottky diodes Features • ■ ■ ■ ■ ■ BAS70ZFILM Single Very low conduction losses Negligible switching losses Low forward and reverse recovery times Surface mount device Low capacitance diode
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BAS70
BAS70ZFILM
OD-123
BAS70JFILM
OD-323
BAS70KFILM
OD-523
BAS70FILM
BAS70
OD-123,
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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2514-6002UB
Abstract: NSSW100 TPS6118x NSSW100CT HPA260A JP13 JP15 2514-6002UB header NSP nichia TP72
Text: User's Guide SLVU238 – February 2008 WLEDEVM-260 WLED Load Board The WLEDEVM-260 load board contains 8 white light emitting diode WLED banks/strings which contain either 10 or 12 WLEDs as selected by the odd numbered jumpers (JP1, JP3, etc.). The even numbered
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SLVU238
WLEDEVM-260
TP1-TP89)
14-pin
TPS6118xEVMs
2514-6002UB
NSSW100
TPS6118x
NSSW100CT
HPA260A
JP13
JP15
2514-6002UB header
NSP nichia
TP72
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Untitled
Abstract: No abstract text available
Text: SEMIKRON SKiiP 962 GB 060 - 350 W T/FT Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage 400 V lc Theatsink —25 °C 900 A ICM Theatsink —25 °C, tp < 1 ITIS 1800 A IGBT & Diode
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arketin\datenbl\skiippac\600V\d962gb
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