Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Gleichrichterdiode Rectifier Diode D6001N Key Parameters fenndaten VRRM 5000 V IFAVM 5790 A TC=100 °C IFSM VT0 118000 A 3570A (TC=55°C) 0,674 V rT 0,104 mΩ RthJC 4,5 K/kW Clamping Force 63 … 91 kN
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D6001N
50/60Hz
50/60Hz
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DIACS
Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
Text: HITANO ENTERPRISE CORP. DB3 THRU DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
DIACS
DB3 DB4
diac db3 specifications
DIAC 5 VOLT
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2SK1822-01M
Abstract: No abstract text available
Text: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK1822-01M
2SK1822-01M
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2SK2166
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
2SK2166
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Untitled
Abstract: No abstract text available
Text: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK1822-01M
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Untitled
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
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2SK2166-01R
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
2SK2166-01R
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2SK2165-01
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2165-01
2SK2165-01
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D60 DIAC
Abstract: thyristor firing circuit diac 32 V 5mA DIODE D28 Low Voltage DIACs 400C bidirectional diode thyristor diac diode db3 diac db3 specifications
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
D60 DIAC
thyristor firing circuit
diac 32 V 5mA
DIODE D28
Low Voltage DIACs
400C
bidirectional diode thyristor diac
diode db3
diac db3 specifications
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diac 32 V 5mA
Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
Text: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,
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DO-35
MIL-STD-202E,
diac 32 V 5mA
Bidirectional Diode Thyristors
diac db3 specifications
D60 DIAC
diode d60
400C
diode db3
DIAC 5 VOLT
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gs 069
Abstract: 2SK2166-01
Text: 2SK2166-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control
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2SK2166-01
gs 069
2SK2166-01
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bc 457
Abstract: Transistor BC 457 IRFP250 SMD-220 smd 8a 046
Text: PD-96059A HFA04SD60SPbF Ultrafast, Soft Recovery Diode t rr = 38ns IF AV = 4Amp VR = 600V Features Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Lead-Free
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PD-96059A
HFA04SD60SPbF
12-Mar-07
bc 457
Transistor BC 457
IRFP250
SMD-220
smd 8a 046
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Untitled
Abstract: No abstract text available
Text: PD-96059A HFA04SD60SPbF Ultrafast, Soft Recovery Diode t rr = 38ns IF AV = 4Amp VR = 600V Features Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Lead-Free
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PD-96059A
HFA04SD60SPbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD-96059A HFA04SD60SPbF Ultrafast, Soft Recovery Diode t rr = 38ns IF AV = 4Amp VR = 600V Features Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Lead-Free
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PD-96059A
HFA04SD60SPbF
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2475A
Abstract: D-60 HFA75MB40C IRFP250
Text: PD -2.475A HFA75MB40C HEXFRED Ultrafast, Soft Recovery Diode TM Features ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 400V VF(typ.) = 1V
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HFA75MB40C
200nC
2475A
D-60
HFA75MB40C
IRFP250
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D-60
Abstract: HFA60MB60C IRFP250
Text: PD -2.462 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V VF(typ.) = 1.1V
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HFA60MB60C
200nC
D-60
HFA60MB60C
IRFP250
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D-60
Abstract: HFA60MB60C IRFP250
Text: PD -2.462 rev. A 03/99 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V
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HFA60MB60C
200nC
D-60
HFA60MB60C
IRFP250
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DVD laser head
Abstract: "dvd pickup"
Text: LASER DIODE LC-50S-660C/D-60X LC-50S-660C/D-60X is 660nm AlGaInP quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-660C/D-60X is a CW single mode injection
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LC-50S-660C/D-60X
LC-50S-660C/D-60X
660nm
DVD laser head
"dvd pickup"
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2N3906 SOT-23
Abstract: MMBT3906FSCT-ND CRCW060310R0FRT1 WLED driver CRCW06030R0FRT1 mic2297 H-22 M9999-120508-B
Text: Application Note 58 MIC2297 60 WLED Driver with Current Mirror Introduction The White Light-Emitting Diode WLED is becoming more and more popular for LCD back lighting in visual display electronics. Whether for lighting up LCDs in PDAs, cell phones or remote controls, the luminescence of the WLED
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MIC2297
M9999-120508-B
2N3906 SOT-23
MMBT3906FSCT-ND
CRCW060310R0FRT1
WLED driver
CRCW06030R0FRT1
H-22
M9999-120508-B
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Untitled
Abstract: No abstract text available
Text: M E400803 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T h te e -P h tiS e Diode Bridge Modules 30 Amperes/800 Volts Description: O U T L IN E DRAWING Powerex Three-Phase Diode Bridge Modules are medium pow ered devices for use in inverter
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E400803
Amperes/800
ME400803
peres/800
000fl553
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Untitled
Abstract: No abstract text available
Text: PD-2.462 International raÊjRectifier HFA60MB60C HEXFRED Ultrafast, Soft Recovery Diode Features V r = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V (4-6) F ^ , ^ ANODE
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HFA60MB60C
500nC
70A/JJS
G021fiti4
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Untitled
Abstract: No abstract text available
Text: bitemational PD-2.475 lüRectifier HFA75MB40C Ultrafast, Soft Recovery Diode HEXFRED" Features V R = 400V ISOLATE DBASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization o f Recovery Parameters V F = 1 .3 V i 1(1-3) ANODE 1 (4-6)
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HFA75MB40C
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DIODE h4b
Abstract: diode sg 45 APT2X31D50J pearson 411
Text: K2 A2 K1 ADVANCED POW ER Te c h n o lo g y * APT2X31D60J APT2X31D50J Al 600V S00V 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT2X31D60J
APT2X31D50J
OT-227
OT-227
DIODE h4b
diode sg 45
pearson 411
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Untitled
Abstract: No abstract text available
Text: Bulletin 12039 International [K?RjRectifier 70/30ûu R s e rie s STANDARD RECOVERY DIODES Stud Version 250A 300A Features • ■ Alloy diode Peak reverse voltage up to 1000V ■ Popular series for rough service ■ Standard JEDEC types ■ Stud cathode and stud anode version
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002bflbB
70/300U
4A5545E
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