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    DIODE D213 Search Results

    DIODE D213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D213 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


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    PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    GRM40X7R104K25

    Abstract: 68c11 MC68HC11 PLCC52 MC68HC811E9 GRM230Y5V106Z10 D206 DIP8 RS232 MAX232 rx led DB9RA 74HC259 motorola D213 user guide
    Text: AND8073/D Using the NCN6000 Smart Card Interface Demo Board V1.1 User Manual Prepared by: Michael Bairanzade Applications Engineering Thierry Caritoux Applications Engineering http://onsemi.com APPLICATION NOTE • Asynchronous type Smart card Synchronous cards are


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    PDF AND8073/D NCN6000 NCN6000. NCN6000 NCN6000/D, r14525 GRM40X7R104K25 68c11 MC68HC11 PLCC52 MC68HC811E9 GRM230Y5V106Z10 D206 DIP8 RS232 MAX232 rx led DB9RA 74HC259 motorola D213 user guide

    ups transformer winding formula

    Abstract: ups PURE SINE WAVE schematic diagram schematic diagram UPS numeric digital 600 plus schematic diagram online UPS schematic diagram of double conversion online UPS smd diode ae c604 d1n4149 dc-ac inverter PURE SINE WAVE schematic diagram UC3843 lead acid battery charger application note 3 phase ups PURE SINE WAVE schematic diagram
    Text: Single Phase On-Line UPS Using MC9S12E128 Designer Reference Manual HCS12 Microcontrollers DRM064 Rev. 0 09/2004 freescale.com Single Phase On-Line UPS Using MC9S12E128 Designer Reference Manual by: Ivan Feno, Pavel Grasblum and Petr Stekl Freescale Semiconductor Czech System Laboratories


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    PDF MC9S12E128 HCS12 DRM064 ups transformer winding formula ups PURE SINE WAVE schematic diagram schematic diagram UPS numeric digital 600 plus schematic diagram online UPS schematic diagram of double conversion online UPS smd diode ae c604 d1n4149 dc-ac inverter PURE SINE WAVE schematic diagram UC3843 lead acid battery charger application note 3 phase ups PURE SINE WAVE schematic diagram

    FST3253

    Abstract: bi-directional switches FET FST16211 fairchild korea FST3126 FST3244 FST3245 FST3345 FST3383 FSTU3384
    Text: The industry’s only 1- to 24-Bit Switch Solution Fairchild Switch Product Line Card Bus Switch Overview Fairchild’s Switch product line FS is a family of low-impedance bus, bus exchange and multiplexer switches. These devices provide high-speed, CMOS-process TTL-compatible bus switching. The low “on”


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    PDF 24-Bit 250ps 48/56-Lead FST3253 bi-directional switches FET FST16211 fairchild korea FST3126 FST3244 FST3245 FST3345 FST3383 FSTU3384

    D235R

    Abstract: 217F D201RW D202RW D203RW
    Text: D200RW Series Miniature SIP, 2W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:


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    PDF D200RW D235R 217F D201RW D202RW D203RW

    D2130

    Abstract: 2SD2130
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 D2130 2SD2130

    2SD2130

    Abstract: D2130
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 2SD2130 D2130

    D2130

    Abstract: No abstract text available
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 -55HIBA D2130

    D2130

    Abstract: 2SD2130
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 D2130 2SD2130

    Untitled

    Abstract: No abstract text available
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD2131

    Untitled

    Abstract: No abstract text available
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130

    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD2131 D2131 transistor d2131 2SD2131

    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD2131 D2131 transistor d2131 2SD2131

    D2130

    Abstract: 2SD2130
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 D2130 2SD2130

    mosfet d408

    Abstract: transistor d407 TRANSISTOR D405 mosfet D403 transistor tp122 D408 mosfet tp122 transistor D408 transistor D303-1 TRANSISTOR D400
    Text: 3-Phase AC/BLDC High Voltage Power Stage Board Users Guide 3PHACBLDCHVPSUG Rev. 1 01/2007 freescale.com 3-Phase AC/BLDC High-Voltage, Power-Stage Board Users Guide by: Petr Frgal Freescale Semiconductor Czech System Center To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


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    mpxy8300

    Abstract: P-830-003 C1005C0G1H101JT TPLS8027-7 A 434 RF modules freescale tpms antenna c1005x7r1e103kt c3225x5r1c226mt NX3225DA MPXY8300RM
    Text: MPXY8300 Design Reference Manual Document Number: MPXY8300RM Rev. 2 12/2008 MPXY8300 Design Reference Manual by: Rudi Lenzen Freescale Toulouse Systems Laboratories Toulouse, France To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


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    PDF MPXY8300 MPXY8300RM MPXY8300 P-830-003 C1005C0G1H101JT TPLS8027-7 A 434 RF modules freescale tpms antenna c1005x7r1e103kt c3225x5r1c226mt NX3225DA MPXY8300RM

    c225 capacitor smd

    Abstract: D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier
    Text: Application Report SLEA031 - MARCH 2004 TAS5066-5112F6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5112F6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5112ADFD from Texas Instruments TI .


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    PDF SLEA031 TAS5066-5112F6EVM TAS5066 TAS5112ADFD 24-bit 192kHz. c225 capacitor smd D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier

    Untitled

    Abstract: No abstract text available
    Text: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF


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    PDF ENW89810K5CF B014433 216QEBMU PAN1311-SPP ENW89811xxxF PAN1321-SPP D-21337

    D2130

    Abstract: 2SD2130
    Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2130 D2130 2SD2130

    PAN1321-SPP

    Abstract: Pan1321 PAN1311 ENW89811K4CF T8753-2 B014433 t8753 marking code maxim label PLL Synthesizer Modules, panasonic Infineon Specific HCI Commands bluetooth
    Text: January 2011 ENW89811K4CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1321-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 3.1 Edition 2011-01-18 Published by


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    PDF ENW89811K4CF B014433 216QEBMU PAN1321-SPP D-21337 PAN1321-SPP PAN1311; PAN1311 Pan1321 ENW89811K4CF T8753-2 B014433 t8753 marking code maxim label PLL Synthesizer Modules, panasonic Infineon Specific HCI Commands bluetooth

    PAN1322-SPP

    Abstract: No abstract text available
    Text: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH


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    PDF ENW89841A3KF B021246 216QEBMU PAN1322-SPP D-21337 PAN1322 PAN1322-SPP

    Untitled

    Abstract: No abstract text available
    Text: International [^ R e c tifie r se r ies irk .26, A t, .56, .71, .91 THYRISTOR/ DIODE and THYRISTOR / THYRISTOR ADD-A-pak Power Modules Features I • ■ I ■ H H H ■ Electrically isolated base plate 3500 VRMS isolating voltage Standard JEDEC package


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    diode D214

    Abstract: ZX-08
    Text: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e


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    PDF QQlbb72 diode D214 ZX-08

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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