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    DIODE D132 Search Results

    DIODE D132 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD3 diode

    Abstract: 6n06e k4366
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    PDF IFS100B12N3T4 CEE32 1322D14 CEE326 732CF5CD 2313ECEC 1231423567896AB2CDEF1B6 54E36F 4112F BD3 diode 6n06e k4366

    LTC4098-3.6

    Abstract: 6N16 l436 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    PDF IFS75B12N3T4 CEE32 1322D14 CEE326 732CF5CD 2313ECEC 1231423567896AB2CDEF1B6 54E36F 4112F LTC4098-3.6 6N16 l436 SXA-01GW-P0.6

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    PDF FS200R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    PDF FS100R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F

    6A243

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    PDF FS150R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F 6A243

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FS75R06KE3 IGBT-Module IGBT-modules EconoPACK mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™ with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    PDF FS75R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F

    semikron skiip 132 GDL

    Abstract: No abstract text available
    Text: SKiiP 132 GDL 120 - 412 CTV E/A Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM


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    PDF

    TDB6HK180N16RR

    Abstract: 6a65
    Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3


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    PDF TDB6HK180N16RR CEF36" 3BC1322C14BB 32C36 36423B 4256E D6345 6423B 36423B 6a65

    132-gd

    Abstract: TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318
    Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C


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    PDF \marketin\datenbl\skiippac\sensor\d132gd 132-gd TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318

    CM121308

    Abstract: CM1213-02SR CM1213-01ST
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 IEC61000-4-2 MSOP-10 CM121308 CM1213-02SR CM1213-01ST

    cm1213-04st

    Abstract: 025 SOT23 CM1213-04SO CM1213 CM1213-01ST CM121308 CM1213-02SR D138 marking Zener diode sot23-5 california micro CM1213-02SS
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 CM1213 MSOP-10 cm1213-04st 025 SOT23 CM1213-04SO CM1213-01ST CM121308 CM1213-02SR D138 marking Zener diode sot23-5 california micro CM1213-02SS

    CM1213-02ST

    Abstract: CM1213-02SR CM1213-04SO ZENER DIODE E1 025 SOT23 3-pin D128 transistor HDMI D136 d138 SOT143 package CM1213 diode zener 05
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 CM1213 MSOP-10 CM1213-02ST CM1213-02SR CM1213-04SO ZENER DIODE E1 025 SOT23 3-pin D128 transistor HDMI D136 d138 SOT143 package diode zener 05

    CM1213-04SO

    Abstract: No abstract text available
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 IEC61000-4-2 MSOP-10 CM1213-04SO

    CM1213-04SO

    Abstract: CM1213 D123 CM1213-02SR CM1213-04ST Zener diode sot23-5 california micro CM121308
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


    Original
    PDF CM1213 CM1213 MSOP-10 CM1213-04SO D123 CM1213-02SR CM1213-04ST Zener diode sot23-5 california micro CM121308

    Untitled

    Abstract: No abstract text available
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 CM1213 MSOP-10

    CM1213-02SS

    Abstract: CM121308 marking d1x1 CM1213-01ST
    Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.


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    PDF CM1213 MSOP-10 CM1213-02SS CM121308 marking d1x1 CM1213-01ST

    PW610

    Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
    Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,


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    PDF 2SJ324 IEI-1209) PW610 TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0

    isa2000

    Abstract: powerex cd49
    Text: m ßfEREX CD492010 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reverse Dual Diode POW-R-BLOK Modules 100 Amperes/2000 Volts Description: Powerex Reverse Dual Diode POW-R-BLOK™ Modules are designed for use in applications


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    PDF CD492010 Amperes/2000 isa2000 powerex cd49

    shindengen m

    Abstract: No abstract text available
    Text: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum


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    PDF MD1320N D1320N MD1320N 5038N 32-pin shindengen m

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    AL 1450 DV

    Abstract: 132-gd 132 gd 120
    Text: SEMIKRON SKiiP 132 GD 120 • 318 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode VcES SKiiPPACK SK integrated intelligent Power PACK 3-phase bridge SKiiP 132 GD 120 + Driver 318 CTV 713 V cc 9> O perating D C link voltage


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    PDF arketin\datenbl\skiippac\sensor\d132gd AL 1450 DV 132-gd 132 gd 120

    Untitled

    Abstract: No abstract text available
    Text: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1


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    PDF G0Dlb77 MCC132 MCD132 132-06io1 132-12io1 132-14io1 132-16io1 MCD132-06Â MCD132-06Ã

    AL 1450 DV

    Abstract: No abstract text available
    Text: SEMIKRON S K iiP P A C K S K iiP 132 G P L 1 2 0 - 4 1 2 C TV E/A A b so lu te M ax im u m R atings Sym bol |c o n d itio n s 1> Values U n its 1200 V 900 V 3-p h a s e b ridg e IGBT & Inverse Diode V cE S V c c 9> O perating DC link voltage lc T h ea tsink


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    PDF arketin\datenbl\skiippac\sensor\d132gdl AL 1450 DV

    D1323

    Abstract: RS-232C SN75188 MC1488 SN55188 SN7S188
    Text: MC1488, SN55188, SN75188 QUAD LINE DRIVERS SLLS094A- D1323, SEPTEMBER 1 9 8 3 - REVISED MARCH 1993 Meets Specifications of EIA RS-232-C S N 5 5 1 8 8 . . . J OR W PACKAGE M C 1488, S N 7S 188 . . . D O R N P A C K A G E Designed to Be Interchangeable With


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    PDF MC1488, SN55188, SN75188 SLLS094A- D1323, RS-232-C MC1488 SN55188. SN7S188 D1323 RS-232C SN75188 MC1488 SN55188 SN7S188