diode 1n4
Abstract: No abstract text available
Text: SEMICONDUCTOR 1N4148 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast switching diode B C DIM MILLIMETERS A MAX 3.9 B MIN 27.5 MAX 1.9 C MAX 0.52 D A B MAXIMUM RATING Ta=25 CHARACTERISTIC D SYMBOL RATING
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1N4148
DO-35
diode 1n4
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1N4756A
Abstract: diode iz zener silcon diode
Text: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC
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1N4756A
DO-41
1N4756A
diode iz zener
silcon diode
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KDZ5.6CF
Abstract: 5v ZENER DIODE
Text: SEMICONDUCTOR KDZ5.6CF TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES CATHODE MARK Small Package : TFSC Normal Voltage Tolerance about 2% C 1 D 2 DIM A B C D E F B A MAXIMUM RATING Ta=25 CHARACTERISTIC
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20x20mm
KDZ5.6CF
5v ZENER DIODE
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MARKING y vsc
Abstract: No abstract text available
Text: SEMICONDUCTOR KDZ5.6CV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES CATHODE MARK Small Package : VSC Normal Voltage Tolerance about 2% C D 1 2 B DIM A B C D E F A MAXIMUM RATING Ta=25 CHARACTERISTIC
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20x20mm
MARKING y vsc
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OF VR 10K
Abstract: No abstract text available
Text: KDV1500T SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA AM RADIO BAND TUNING APPLICATION. FEATURES E ・High Capacitance Ratio. B K K DIM A B ・High quality factor. ・Small Package. D G 3 G F A C 2 1 RATING UNIT Reverse Voltage
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KDV1500T
OF VR 10K
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GP 836 DIODE
Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Text: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C
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KDZ36FV
KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
GP 836 DIODE
3fv 60
HP 3379
KDZ9.1FV
ZENER QF
KDZ10FV
KDZ20FV
KDZ16VV
KDZ3.6FV
kdz16fv
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diode marking v6
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=14.5 Min. ・Low Series Resistance : rs=1.1Ω(Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25℃)
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C2V/C25V
KDV300V
470MHz
470MHz
diode marking v6
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d3 marking
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 B E ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)
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KDP622UL
ULP-12
100MHz
d3 marking
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is
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DD30HB/KD30HB
E76102
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Untitled
Abstract: No abstract text available
Text: SANSHA E L E C T R I C MODULE MF6 CO 37E D DD40F B T 'H IS M B D D D 0 Q T 2 =1 B S E M J . . 3 - 0 7 SanRex Pow er Diode Module D D 40F series are designed for various rectifier circuits. D D 40F has two diode chips connected in series in 25 mm 1 inch width package and the
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DD40F
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD60HB/KD60HB UL;E76102 M Power Diode Module D D 60H B series are designed for various rectifier circuits. D D 60H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is
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DD60HB/KD60HB
E76102
DD60HB-120
B-103
QQ022bl
7TT1243
0Q022b2
DD60HB
B-104
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection.
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BA314
DO-35
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Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V
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DD200HB
E76102
M8X14
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal
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D02b230
BAS45L
bb53T31
Q02b232
bb53131
Q0Eb233
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Untitled
Abstract: No abstract text available
Text: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C
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1000Si
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Untitled
Abstract: No abstract text available
Text: b2E D • b457S25 0037551 34T H N E C E LASER DIODE N E C ELECTRONICS INC / NDL5600D 1 310 nm O PTICA L FIBER C O M M U N IC A T IO N S InG aAsP P H A SE -SH IF T E D D F B D C P B H LA SER D IO D E D E S C R IP T IO N N D L 5 6 0 0 D is a 1 310 nm D F B Distributed Feed-back laser diode chip on carrier with ribbon lead.
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b457S25
NDL5600D
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fro 108
Abstract: No abstract text available
Text: b£E » • b4S7525 0D37S04 553 MNECE_ N E C ELECTRONICS INC LASER DIODE /_ NDL5735PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP D C P B H LASER DIODE MODULE DESCRIPTION N D L 5 7 3 5 P A is a 1 310 nm laser diode DIP m odule w ith singlemode fib e r w ith o u t therm o-electric cooler. It incorporates
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4S7525
D37S04
NDL5735PA
b427555
fro 108
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bandfilter
Abstract: diods detector diode bandfilter VP
Text: KAB 1 EABi T r ip le J io d e T h e trip le diode E A B I max32 consists o f th re e diodes 6V^ a rra n g e d a b o u t a com m on, h o rizo n tally m o u n te d , c a th o d e , h a v in g b e en especi a lly develo p ed fo r 3-diode circu its. T he o b je c t o f th is
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Untitled
Abstract: No abstract text available
Text: D I O D E M O D U L E f . r .d DD250GB UL;E76102(M) Power Diode Module D D 2 5 0 G B series are designed for various rectifier circuits. D D 2 5 0 G B has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage
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DD250GB
E76102
0002Qbb
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Untitled
Abstract: No abstract text available
Text: DIODE T H R E E P H A S E S B R ID G E T Y P E DF30DB Power Diode Module D F 3 0 D B is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri
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DF30DB
30Amp
Tp25a
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Untitled
Abstract: No abstract text available
Text: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is
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37SM7
NDL5600
b427S2S
b427525
GQ37SS0
NDL5600
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Untitled
Abstract: No abstract text available
Text: j- i j- I- “1 Surface Mounting Device p Rectifier Diode Shingle Diode v f iill O U T LIN E D IM EN SIO N S Unit : mm D 1 F D Weight : 0.06g 600V 1A ffl Ü >K Standard soldering pad 5.0 ±0-3 •S B . •¡as. OA. a s. 1 fa i 1.2*°3 M fc te m b -2^ '3
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00030b4
D1F20
35/im
D0030b5
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Untitled
Abstract: No abstract text available
Text: 3QE D • b.42?52S 002el22b 4 ■ N E «^ELECTRONICS INC T~m - 0 7 LASER DIODE N D L5 0 0 3 D 1 _J 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTIO N NDL5003D 1 is a 1 300 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH
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NDL5003D
L5003D
DL5003D
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aml 10 series
Abstract: Scans-001779
Text: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e
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-DAF40
aml 10 series
Scans-001779
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