Untitled
Abstract: No abstract text available
Text: EQA01-17R Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage17 @I(Z) (A) (Test Condition)10m Tolerance (%)10 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k.07 Maximum Operating Temp (øC)125õ
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EQA01-17R
Voltage17
pp/10k
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Untitled
Abstract: No abstract text available
Text: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27307
GB20RF60K
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Untitled
Abstract: No abstract text available
Text: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27308
GB10RF60K
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C67078-S1454-A2
Abstract: No abstract text available
Text: BUZ 272 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 272 -100 V -15 A 0.3 Ω TO-220 AB C67078-S1454-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1454-A2
Ther20
C67078-S1454-A2
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 800 A ABB HiPakTM IGBT Module 5SND 0800M120100 Doc. No. 5SYA 1594-00 May 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0800M120100
CH-5600
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BUZ 20
Abstract: C67078-S3127-A2 BUZ323
Text: BUZ 323 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 323 400 V 15 A 0.3 Ω TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3127-A2
BUZ 20
C67078-S3127-A2
BUZ323
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L500H
Abstract: No abstract text available
Text: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27308
GB10RF60K
E78996
12-Mar-07
L500H
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5SNA1000G450300
Abstract: cosmi 5SNA 1000G450300
Text: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1000G450300
CH-5600
5SNA1000G450300
cosmi
5SNA 1000G450300
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Untitled
Abstract: No abstract text available
Text: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27307
GB20RF60K
E78996
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27300
GB20XF60K
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5SNA-1500E330300
Abstract: igbt 3 KA res 301 ohm 1 1w
Text: VCE IC = = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 Doc. No. 5SYA 1595-00 July 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1500E330300
CH-5600
5SNA-1500E330300
igbt 3 KA
res 301 ohm 1 1w
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Untitled
Abstract: No abstract text available
Text: QRD4518001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Diode Isolated Module 180 Amperes/4500 Volts S NUTS (3TYP) A D F F B E C N M 1 2 3 V (4TYP) G (3TYP) R (DEEP) Description: High voltage diodes feature highly
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QRD4518001
Amperes/4500
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27309
GB50RF60K
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Untitled
Abstract: No abstract text available
Text: QRD4518001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Diode Isolated Module 180 Amperes/4500 Volts S NUTS (3TYP) A D F F B E C N M 1 2 3 V (4TYP) G (3TYP) R (DEEP) Description: Powerex Dual Diode Modules are
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QRD4518001
Amperes/4500
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fus20
Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0400J650100
CH-5600
fus20
abb hipak
5SYA2039
igbt 3 KA
c2120
c1840
5SNA0400J650100
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Untitled
Abstract: No abstract text available
Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27300
GB20XF60K
80merchantability,
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21067 07/05 15ETL06SPbF 15ETL06-1PbF Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC Features • • • • • VF = 0.99V typ. IF AV = 15Amp VR = 600V Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current
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PD-21067
15ETL06SPbF
15ETL06-1PbF
15Amp
15ETL06
15ETL06
13E-01
84E-01
01E-02
22E-02
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Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27302
GB50XF60K
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Untitled
Abstract: No abstract text available
Text: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27299
GB30XF60K
80merchantability,
12-Mar-07
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CD42
Abstract: CD421660 CD47
Text: CD42_60 CD47_60 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING A C F G Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter R07DS0176EJ0400 Rev.4.00 Dec 07, 2012 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
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RJH60D7DPM
R07DS0176EJ0400
PRSS0003ZA-A
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SOT 23 A7 diode
Abstract: A4 marking diode diode a7 marking A7 diode diode marking a4 Diode Diode BAV99 SOT23 A7 diode A7 sot-23 single DIODE DOUBLE FAST DIODE
Text: 15 PLESSEY SENICOND/DISCRETE DE | 7 5 E 0 S 3 3 QDG5D23 1 7220533 PLE SS E Y S E M I C O N D /D ISCRETE 95 D 0 5 0 2 3 I T'Oi- 07 SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES I i | : \ The B A V and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs
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QDG5D23
250ies
OT-23
OT-23
FMMD914
SOT 23 A7 diode
A4 marking diode
diode a7
marking A7 diode
diode marking a4
Diode
Diode BAV99 SOT23
A7 diode
A7 sot-23 single DIODE
DOUBLE FAST DIODE
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1ss239
Abstract: No abstract text available
Text: b7 T O S H I B A -CDISCRETE/OPTOï ^1^0^7250 9097250 TOSHIBA DISCRETE/OPTO GD0T343 h 67C 0 9 3 4 3 D T - 0 7 <07 - 1SS239 Silicon Epitaxial Schottky Barrier Type Diode Unit in mm CATV/UHF/VHF MIXER APPLICATIONS. + Û25 L 5-Û 15 J - Nrt öd +l Q6 5 Q 6±ai
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GD0T343
1SS239
--------1SS239
1ss239
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Laser microphone
Abstract: OD-8303 OD-83Q3 OD-9470 JA3P
Text: N E C E L E CT RONI CS INC 5= J> b 4 27 52 S 0 00 55 15 h HNECE T-41-07 NEC Fiber Optic Devices OD-8303- D LD Module OD-8303 is designed to couple LD Laser Diode) output light to optical fiber through connector. PIN photodiode is installed in OD-8303 for APC (Automatic Power Control) and moni
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b42752S
T-41-07
OD-8303-
OD-8303
OD-83Q3
OD-9470
ili030l
BM74I9
Laser microphone
JA3P
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