BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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BAT18
Abstract: BAT18-05 BAT18-04
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04,
Jan-07-2003
100MHz
BAT18
BAT18-05
BAT18-04
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G547F2P81U
Abstract: G547 Quanta ZG5 usb board quanta computer 11C15 Clamp-Diode Quanta ZR6 G547F2
Text: 5 4 3 2 1 D D USB CONNECTOR USB0PWR1 USBP0USBP0+ USBP0USBP0+ *6.34K/F_4 C19 .1U/10V_4 C20 C9 *Clamp-Diode 100U/6.3V_3528 1 C17 2 C15 C16 *470P/50V/04 .1U/10V_4 R313 1 5 CN1 2 OC# Follow ZG5 03/04 C10 *Clamp-Diode modify CN3 rev:C *100U/6.3V_3528 C 8 7 6 5
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SYI-020173MR004S51FZR
1u/10V
G547F2P81U
120mil
470P/50V/04
100U/6
AL000547000
G547
Quanta ZG5
usb board
quanta computer
11C15
Clamp-Diode
Quanta ZR6
G547F2
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BAS70
Abstract: BAS170W BAS70-02L BAS70-02W BAS70-04S MA6050 BAS70-05W BAS70-06 BAS70-04 BAS70-04W
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-06
BAS70
BAS170W
BAS70-02L
BAS70-02W
BAS70-04S
MA6050
BAS70-05W
BAS70-06
BAS70-04
BAS70-04W
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INFINEON diode MARK 22
Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-05
INFINEON diode MARK 22
marking code TS
marking code 76s
BAS70-02W
BAS70-04S
MARKING 74s
marking 77s
bas16 infineon top marking code
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DIN 6784
Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-05
DIN 6784
marking code TS
Diode Mark sot23 4x
marking code 76s
BAS70-02W
BAS70-04S
MARKING 74s
marking 77s
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BAS170W
Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70-06
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-06
BAS170W
BAS70
BAS70-02L
BAS70-02W
BAS70-04S
BAS70-04
BAS70-04W
BAS70-05
BAS70-05W
BAS70-06
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marking code 76s
Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-05
marking code 76s
BAS70-07W
BAS70-02W
BAS70-04S
MARKING 74s
marking 77s
E6327 Application
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BAS70-07
Abstract: 75S SOT23 schottky 73s BAS70-07W BAS170W BAS70 BAS70-02L BAS70-02W BAS70-04S marking 77s
Text: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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BAS70.
BAS170W
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-05
BAS70-07
75S SOT23
schottky 73s
BAS70-07W
BAS70
BAS70-02W
BAS70-04S
marking 77s
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BAS 20 SOT23
Abstract: 44s sot23 BAS40 sot323 transistor marking 44s BAS140W BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06
Text: BAS40./BAS140W Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS 20 SOT23
44s sot23
BAS40
sot323 transistor marking 44s
BAS140W
BAS40-02L
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
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Untitled
Abstract: No abstract text available
Text: BAS40./BAS140W Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
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BAS-400
Abstract: shcottky diode BAS40-05 smd smd code c09 BAS40 BAS40-04 BAS40-05 BAS40-06
Text: BAS40 / -04 / -05 / -06 200mW, Low V F, SMD Schottky Barrier Diode Small Signal Diode F A Features B Metal-on-silicon Shcottky Barrier E Surface device type mounting Moisture sensitivity level 1 C G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BAS40
200mW,
MIL-STD-202,
BAS-400
shcottky diode
BAS40-05 smd
smd code c09
BAS40-04
BAS40-05
BAS40-06
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smd marking D11
Abstract: shcottky diode
Text: BAS40 / -04 / -05 / -06 SMD Schottky Barrier Diode 200mW, Low VF, Small Signal Diode SOT-23 F A C Features B Metal-on-silicon Shcottky Barrier E Surface device type mounting Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BAS40
200mW,
OT-23
MIL-STD-202,
C/10s
008gram
smd marking D11
shcottky diode
|
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Untitled
Abstract: No abstract text available
Text: BAS70. / BAS170W Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2
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BAS70.
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04T
BAS70-04W
BAS70-04S
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BAS70
Abstract: BAS170W BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04T BAS70-04W BAS70-05 BAS70-05W
Text: BAS70. / BAS170W Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2
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BAS70.
BAS170W
BAS70-02L
BAS70-02W
BAS70
BAS70-04
BAS70-04T
BAS70-04W
BAS70-04S
BAS70
BAS170W
BAS70-02L
BAS70-02W
BAS70-04S
BAS70-04
BAS70-04T
BAS70-04W
BAS70-05
BAS70-05W
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E72873
Abstract: D-68623
Text: Advanced Technical Information HiPerFREDTM Epitaxial Diode MEK 600-04 DA dual diode, common cathode VRSM VRRM V V 400 400 1 Type 2 VRRM = 400 V IFAVM = 880 A trr = 220 ns 3 2 3 1 MEK 600-04DA Symbol Conditions Maximum Ratings IFAVM IFAVM TC = 25°C; rectangular, d = 0.5
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600-04DA
D-68623
E72873
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ASEA abb diode
Abstract: MOQ31 D1 diode 3108 DIODE ABB D1 MQQ31 E72873 5116D1
Text: A S E A BROUN/ABB SEMICON Schnelle Dioden-Module 03 D I □ 04 A3 dû O D D O n ? t Fast switching diode modules Daten pro D iode/data per diod e/les caractéristiques se rapportent à 1 diode V rrm Ifr m s V drm If a v m IfS M ft Tc- T v j m (10 ms) 100°C
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OCR Scan
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Tvj-45Â
O-240
MQQ31
MQQ51
MOQ31
MOQ51
ASEA abb diode
D1 diode
3108 DIODE
ABB D1
E72873
5116D1
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Untitled
Abstract: No abstract text available
Text: SEMIKRON V rsm dv/d t cr V rrm Itrms (maximum values for continuous operation) 24 A1*; 30 A2* V drm 2 4 A 1>;45A2> SEMIPACK 0 Thyristor / Diode Modules Itav (sin. 180; Toase = 65 °C) V V V/|xs 17,5 A2> 17,5 A2> 500 400 500 SKKT 15/04 D SKKH 15/04 D 700
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OCR Scan
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PDF
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SKKT15
P13A/100
js100
KT01510
U44J------------
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eiaj-c3
Abstract: EIAJC3 40khz Ultrasonic distance diagram GM5BW01300A IR sensor for 40khz
Text: _ _ R U A D D SPEC. No. DG-045008 Î35ÜE May-20-04 CONPOUND SEMICONDUCTOR DEVICES D IM ^ference ELECTRONIC COMPONENTS GROUP SHARP CORPORATION Technical literature DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. ' GM5BW01300A Specified for CUSTOMERS’ APPROVAL
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OCR Scan
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PDF
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DG-045008
GM5BW01300A
May-20-04
40kHz:
eiaj-c3
EIAJC3
40khz Ultrasonic distance diagram
GM5BW01300A
IR sensor for 40khz
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ERA15-02
Abstract: ERA1506 ERA15-06 ERA22-04 ERA48-02 ERA22-10 era4 ERA15-10 ERA22-02 ERA22-08
Text: V -V F U JI M IN I A X IA I. D IO D I? S E R IE S T PLAN -~ General purpose T Y P lì Vuj.l FRA15-01 ERA15-02 ERA15-04 MM15-06 ERA15-08 ERA15-10 100 200 4i)0 G00 000 1000 lo VL Ik FRD FRD Diode V V V V V V BRA-18-02 ERA48-04 200 V 400 V SOD Low loss FRD
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OCR Scan
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PDF
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FRA15-01
ERA15-02
ERA15-06
ERAI5-08
ERA15-10
ERA48-02
ERA48-04
ERA22-02
ERA22-04
ERA22-0G
ERA1506
ERA22-10
era4
ERA15-10
ERA22-08
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BB510
Abstract: marking CA ITT DIODE
Text: ITT SEMICON] / INTERMETALL blE D • 4fc.62711 00D3175 TTE « I S I BB510 Tuner Diode Si Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole MW range, especially in car receivers. i — r T tx -ÿ 04 I Id
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OCR Scan
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PDF
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0D3175
BB510
O-236
100MHz
BB510
marking CA
ITT DIODE
|
Herrmann
Abstract: type of diode
Text: HERRMANN KG 45E D • 443L275 OOOODTE 7 ■ HRMN ~T-C>h2$ Schnelle Dioden Fast Switching Diodes Diodes rapides Diodentyp Type of diode Type de diode HDS 12/04-4 'f a v m *FRMS V A A 400 12 20 iF A /¡2 d t 'f s m V rrm A A 2S "^VJM 150 110 Ir V 'f V (TO)
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OCR Scan
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443L275
Herrmann
type of diode
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Untitled
Abstract: No abstract text available
Text: SC21 1 0.8A : Outline D ra w in g s FAST RECOVERY DIODE -W - ^ 3*« Äm l_aLJ d I » 1« • M — k 12 Mi 1 -.*04 ì lJ 04 135*" 1 1 12*« l : Features • « S S S S * * "1*6 ■ 3 £ ;jv : M a rk in g Surface m ount device Cathode Mark Cod« High voltage by mesa design.
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OCR Scan
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