BPW17N
Abstract: CQY37N BPW17
Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical
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CQY37N
CQY37N
BPW17N
D-74025
15-Jul-96
BPW17
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CQX48A
Abstract: BPW78 CQX48 CQX48B
Text: CQX48 GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical
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CQX48
CQX48
BPW78
D-74025
29-Jul-96
CQX48A
CQX48B
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CQX48A
Abstract: BPW78 CQX48 CQX48B bpw 104
Text: CQX48 GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical
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CQX48
CQX48
BPW78
D-74025
23-Jun-97
CQX48A
CQX48B
bpw 104
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7915 t
Abstract: Book Microelectronic CQX48B bpw 50 telefunken ra 200 CQX48 BPW78 E2040
Text: CQX48 GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical
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CQX48
CQX48
BPW78
D-74025
06-May-98
7915 t
Book Microelectronic
CQX48B
bpw 50
telefunken ra 200
E2040
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
30-Mar-06
BPW17
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/Eed
08-Apr-05
BPW17
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
18-Jul-08
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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CQY37
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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PDF
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
CQY37
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BPW78
Abstract: CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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BPW17
Abstract: BPW17N CQY37 CQY37N
Text: CQY37N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
CQY37
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CQY37
Abstract: No abstract text available
Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
29-Mar-04
CQY37
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BPW17
Abstract: telefunken BPW17N CQY37N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
telefunken
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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CQX48
CQX48
BPW78
BPW78
18-Jul-08
CQX 88
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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CQX48
CQX48
BPW78
BPW78
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
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BPW17
Abstract: CQY37N BPW17N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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PDF
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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PDF
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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laser diode philips
Abstract: class I laser diode DHHS 21CFR lens laser diode CQF50 n type laser diode
Text: Philips Components cqfso ^ - BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH GRADED INDEX FIBRE PIGTAIL The CQF50 is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed
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CQF50
laser diode philips
class I laser diode
DHHS 21CFR
lens laser diode
n type laser diode
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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OCR Scan
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PDF
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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laser diode philips
Abstract: b548 1550 communication laser diode 1550 laser diode laser diode 1550 nm Semiconductor Laser International laser cd Laser-Diode 1550 nm lens laser diode CQF53
Text: Philips Components J cqfs3 V _ BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SIN G LE M O D E FIBRE PIGTAIL The C Q F 5 3 is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed
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OCR Scan
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PDF
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CQF53
laser diode philips
b548
1550 communication laser diode
1550 laser diode
laser diode 1550 nm
Semiconductor Laser International
laser cd
Laser-Diode 1550 nm
lens laser diode
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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OCR Scan
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PDF
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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Semiconductor Laser International
Abstract: laser cd lens laser diode CQF52 n type laser diode
Text: Philips Components cqfs2 _ A _ HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL The C Q F 5 2 is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed for high-speed long distance, optical communication and data transmission.
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OCR Scan
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PDF
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CQF52
Semiconductor Laser International
laser cd
lens laser diode
n type laser diode
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