Untitled
Abstract: No abstract text available
Text: 2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø When the chip is selected glass package, the chip thickness
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2KG028075YQ
2KG028075YQ
1N4148
2KG028XXX
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Untitled
Abstract: No abstract text available
Text: 2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø When the chip is selected glass package, the chip thickness
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2KG026075YQ
2KG026075YQ
1N4148
2KG026XXX
100mA.
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Untitled
Abstract: No abstract text available
Text: 2KG026075JL 2KG026075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, suit for different plastic
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2KG026075JL
2KG026075JL
1N4148
2KG026XXX
100mA.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, can suit for different
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2KG028075JL
2KG028075JL
1N4148
2KG028XXX
100mA.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2KG023075JL 2KG023075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG023075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, can suit for different
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2KG023075JL
2KG023075JL
1N4148
2KG023XXX
100mA.
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1n4148 die chip
Abstract: 1N4148
Text: 2KG026075JL 2KG026075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075JL is a high speed switching diode chip for plastic package fabricated in planar technology. Ø The chip can be encapsulated as 1N4148 switching diode. Ø The chip has several thicknesses for choice, the
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2KG026075JL
2KG026075JL
1N4148
2KG026XXX
2KG026075JL-155
1n4148 die chip
1N4148
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1n4148 die chip
Abstract: 1N4148
Text: 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. Ø The chip can be encapsulated as 1N4148 switching diode. Ø The chip has several thicknesses for choice, the top
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2KG028075JL
2KG028075JL
1N4148
2KG028XXX
2KG028075JL-155
1n4148 die chip
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PDF
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Untitled
Abstract: No abstract text available
Text: 2KG028075JL_Datasheet 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION ¾ 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. ¾ The chip can be encapsulated as 1N4148 switching diode. ¾ The chip has several thicknesses for choice, the top
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2KG028075JL
1N4148
2KG028XXX
2KG028075JL
2KG028075JL-155
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DIODE CHIP 1N4148
Abstract: 1N4148 silan
Text: 2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip for glass package fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø The chip thickness is 120µm, and the top electrodes
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2KG028075YQ
2KG028075YQ
1N4148
2KG028XXX
DIODE CHIP 1N4148
silan
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PDF
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DIODE CHIP 1N4148
Abstract: 1N4148 1N4148 chip
Text: 2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip for glass package fabricated in planar technology Ø This chip can be encapsulated as 1N4148 switching diode. Ø For the glass package, the top electrodes material is Ag
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2KG026075YQ
2KG026075YQ
1N4148
2KG026XXX
100mA.
DIODE CHIP 1N4148
1N4148 chip
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PDF
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1N4148 1206
Abstract: 1N4148 0603 1N4148 0805 1n4148 LL34 RM 1206 FHD4148 DIODE CHIP 1N4148 DIODE 1N4148 LL-34
Text: THICK FILM CHIP SWITHING DIODE THICK FILM CHIP SWITCHING DIODE FEATURES ROHS RoHS compliant 1N4148 The electrical performance is equal as that of 1N4148. Available for mass production,can help to reduce cost. With improved chip shape which can effectively reduce the pick up error during high speed SMT.
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1N4148
1N4148.
FHD41481206
LL-34
GB/4589
1N4148 1206
1N4148 0603
1N4148 0805
1n4148 LL34
RM 1206
FHD4148
DIODE CHIP 1N4148
DIODE 1N4148 LL-34
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PDF
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1N4148 chip
Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
1N4148 chip
DIODE CHIP 1N4148
1n4148 die
1n4148
1n4148 die chip
1N4148.1N4448
CPD83V
DIODE R3
1N4154
1N4448
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PDF
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diode S 335
Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
diode S 335
1n4148 die
1n4148
1n4148 die chip
1N4154
1N4448
1N4454
1N914
DIODE CHIP 1N4148
CMPD2836
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PDF
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1n4148
Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD63
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
1n4148
1n4148 die chip
DIODE CHIP 1N4148
1N4148.1N4448
1N4154
1N4448
1N4454
1N914
1N914B
CMPD4448
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1n4148 die
Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å
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CPD63
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
1n4148 die
DIODE CHIP 1N4148
1n4148 die chip
1N4148.1N4448
1n914 equivalent
1N4454
1N4148
CMPD914
1N914B
1N4148 chip
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PDF
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1n4148 die chip
Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
1n4148 die chip
1n4448 die chip
CPD83V
DIODE CHIP 1N4148
1n4148 1n4154
diode 1n914
1n4148 die
1N914 DIE
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PDF
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CMPD2836
Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2836
CMPD2838
CMPD914
1N4454
CMPD7000
1N4148.1N4448
1N4148
1N4154
1N4448
1N914
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PDF
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CD4148
Abstract: DIODE CHIP 1N4148 1N4148.N JEDEC 1N4148 1N4148 diode switching cd4148
Text: SWITCHING CHIP DIODE Data Sheet Mechanical Dimensions CD4148 Description Features n ELECTRICALLY IDENTICAL TO JEDEC 1N4148 n INDUSTRY STANDARD 1206 PACKAGE n 350 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage.VRM
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CD4148
1N4148
CD4148
DIODE CHIP 1N4148
1N4148.N
JEDEC 1N4148
1N4148
diode switching cd4148
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cd 5411
Abstract: 1N4148, general purpose signal diode datasheets diode 1n4148 1N4148 28-10 axial diode 1N4148 silicon diodes
Text: 1N4148 Small Signal Diode Features: • High speed silicon switching diodes, axial leaded. • General purpose, industrial, military and space applications. • Hermetically sealed glass with a stud on either side of the glass passivated chip provides excellent stability.
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1N4148
DO-35
cd 5411
1N4148, general purpose signal diode
datasheets diode 1n4148
1N4148
28-10 axial diode
1N4148 silicon diodes
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PDF
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specification diode 4148
Abstract: 1N4148 1N4148 derating diode do35 C 4148 4148 diode axial
Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD 1N4148 DO-35, 500mW MARKING: Cathode band + 4148 no body coat General purpose applications. Hermetically sealed glass and the glass passivated chip Provides excellent stability.
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1N4148
DO-35,
500mW
DO-35
specification diode 4148
1N4148
1N4148 derating
diode do35 C 4148
4148 diode axial
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PDF
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1N4148 minimelf
Abstract: DIODE 1N4148 LL-34 1n4148 melf package glass mini melf diode 1n4148 LL34 1N4148 ll-34 100MHZ 1N4148 MM4148
Text: MM4148 1N4148 mini-M.E.L.F. SIGNAL DIODE Mechanical Data Items Material Package mini MELF Case Hermetically sealed glass Lead/Finish Chip Double stud/Tin Plating Glass Passivated Mini MELF LL-34 , SOD - 80C Hermetically Sealed, Glass Silicon Diodes Absolute Maximum Ratings (Ta=25 oC)
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MM4148
1N4148
LL-34)
100uA
100MHZ,
1N4148 minimelf
DIODE 1N4148 LL-34
1n4148 melf package
glass mini melf diode
1n4148 LL34
1N4148 ll-34
100MHZ
MM4148
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PDF
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1n4148 melf package
Abstract: glass passivated junction SOD323
Text: WILLAS SCS LS4148 VOLT 0.1AMP Schott 1N4148 Quadro MELF SIGNAL DIODE Pb Free Product SO Qu ad r o ME L F .012 1.5 +/-0.1 MECHANICAL DATA Mechanical Data Items Package Case Lead/Finish Chip * Terminal : Solder plated, solderable per MIL-STD-750, Glass 3.5 +/- 0.2
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1N4148
LS4148
100mA
50mmTemperature
100MHz
1n4148 melf package
glass passivated junction SOD323
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PDF
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1N4148 JANTX
Abstract: DIODE LN4148 1N4148 JANTXV 1N4148 JAN 1n4148 unitrode 1N4148-1 UNITRODE in4148 JANTXV 1N4148 LN4148 diode 1N4148
Text: COMPUTER DIODE JAN, JANTX, 1N914 JAN, JANTX, JANTXV 1N4148 JAN, JANTX, JANTXV 1N4148-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/116 • Planar Passivated Chip • DO-35 Package • Non-JAN Available DESCRIPTION
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OCR Scan
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1N914
1N4148
1N4148-1
MIL-S-19500/116
DO-35
1N914.
1N4148 JANTX
DIODE LN4148
1N4148 JANTXV
1N4148 JAN
1n4148 unitrode
1N4148-1 UNITRODE
in4148
JANTXV 1N4148
LN4148 diode
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PDF
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IN6642
Abstract: 1N6642 die IN6642 diode JTX 1N6642 1N6638 1N6642 IN664 1N4148-1 1N6638U 1N6642U
Text: COMPUTER DIODE SWITCHING, UNIMND SERIES FEATURES • M etallurgical Bond • Qualified to MIL-S-19500/578 • Planar Passivated Chip 1N6638, JTX, JTXV 1N6638U, JTX, JTXV 1N6642, JTX, JTXV 1N6642U, JTX, JTXV 1N6643, JTX, JTXV 1N6643U, JTX, JTXV DESCRIPTION
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OCR Scan
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1N6638,
1N6638U,
IN6642,
1N6642U,
1N6643,
1N6643U,
MIL-S-19500/578
1N4148-1
1N4150-1
1N6638
IN6642
1N6642 die
IN6642 diode
JTX 1N6642
1N6642
IN664
1N6638U
1N6642U
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PDF
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