Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE CAPACITANCE Search Results

    DIODE CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    DIODE CAPACITANCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s21 diode

    Abstract: diode DB 3 C BAP50-03
    Text: BAP50-03 General purpose PIN diode PIN DIODE 50 mAMPERES 50 VOLTS P b Lead Pb -Free Features: * Low diode capacitance * Low diode forward resistance 1 2 Application: SOD-323 * General RF applications. Description: * General purpose PIN diode in a SOD-323 package.


    Original
    BAP50-03 OD-323 OD-323 23-Jun-06 s21 diode diode DB 3 C BAP50-03 PDF

    diode Cathode indicated by blue band

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon planar diode FEATURES BA582 QUICK REFERENCE DATA • Low diode capacitance SYMBOL • Low diode series resistance. Vr continuous reverse voltage If continuous forward current Co diode capacitance


    OCR Scan
    BA582 OD123 MAM157 OD123) diode Cathode indicated by blue band PDF

    c18v

    Abstract: C10V C25V SVC333 AM receiver 4084
    Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode


    Original
    EN935B SVC333 SVC333 SVC333] c18v C10V C25V AM receiver 4084 PDF

    C10V

    Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
    Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode


    Original
    EN935B SVC333 SVC333 SVC333] C10V C25V IN 4004 diode diode IN 4004 3662 diode PDF

    BAP51-02

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


    Original
    M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 PDF

    109 DIODE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


    Original
    M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE PDF

    BAS70L

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


    Original
    M3D891 BAS70L OD882 MDB391 SCA75 613514/01/pp8 BAS70L PDF

    1PS10SB63

    Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a


    Original
    M3D891 1PS10SB63 OD882 MDB391 SCA75 613514/01/pp7 1PS10SB63 MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4 PDF

    BAS40L

    Abstract: marking code s6 SOD-882L
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


    Original
    M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP50-03 SOD-323 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃


    Original
    OD-323 BAP50-03 OD-323 PDF

    pin diode sot-23

    Abstract: BAP64-05 marking 5k
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z


    Original
    OT-23 BAP64-05 OT-23 100MHz 100mA, pin diode sot-23 BAP64-05 marking 5k PDF

    f-100MHz

    Abstract: BAP64-05W RF resistor diode 100ma 20v
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance


    Original
    OT-323 BAP64-05W OT-323 100MHz 100mA, f-100MHz BAP64-05W RF resistor diode 100ma 20v PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z


    Original
    OT-23 BAP64-05 OT-23 100MHz 100mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance


    Original
    OT-323 BAP64-05W OT-323 100MHz 100mA, 100MHz PDF

    DIODE S4 74

    Abstract: BAP50 BAP50-02 diode DB 3 C
    Text: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE


    Original
    BAP50 OD523 SC-79 DIODE S4 74 BAP50 BAP50-02 diode DB 3 C PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN  Low diode forward resistance.


    Original
    BAP51-03 OD323 sym006 OD323) R77/04/pp8 PDF

    BAP50LX

    Abstract: SMD MARKING CODE M 4 Diode
    Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance


    Original
    BAP50LX OD882T sym006 BAP50LX SMD MARKING CODE M 4 Diode PDF

    diode DB 3 C

    Abstract: BAP50 BAP50-02
    Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79


    Original
    BAP50 OD523 SC-79 diode DB 3 C BAP50 BAP50-02 PDF

    diode S4 05

    Abstract: smd diode S4 diode smd JS 8 BAP51-02
    Text: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE


    Original
    BAP51 OD523 SC-79 diode S4 05 smd diode S4 diode smd JS 8 BAP51-02 PDF

    data sheet for all smd components

    Abstract: DIODE marking S4 06 HD radio nxp application BAP50-03 SC-76 BAP50
    Text: BAP50-03 General purpose PIN diode Rev. 04 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD323 small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance


    Original
    BAP50-03 OD323 sym006 SC-76 OD323 BAP50-03 data sheet for all smd components DIODE marking S4 06 HD radio nxp application SC-76 BAP50 PDF

    BAS70-07S

    Abstract: BAS70-08S
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


    Original
    BAS70-07S BAS70-08S OT323-6L BAS70-08S PDF

    marking D33

    Abstract: BAS70-07S BAS70-08S
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


    Original
    BAS70-07S BAS70-08S OT323-6L BAS70-08S marking D33 PDF

    free IR circuit diagram

    Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
    Text: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package


    Original
    1SS356 OD-323 OD-323 MIL-STD-202 05-Dec-05 100MHz free IR circuit diagram diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


    Original
    BAS70-07S BAS70-08S OT323-6L BAS70-08S PDF