Untitled
Abstract: No abstract text available
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C3520
C3524
C3520R
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C3520
Abstract: c3524
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C3520
C3524
C3520R
C3520
c3524
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Untitled
Abstract: No abstract text available
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C3520
C3524
C3520R
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Js SMD MARKING CODE SOT23
Abstract: jtp sot23 smd code marking js BAS21N3 N3 smd JTp smd
Text: CYStech Electronics Corp. Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 1/4 High voltage switching diode BAS21N3 Description The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small SOT-23 plastic SMD package.
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C355N3-A
BAS21N3
BAS21N3
OT-23
625mA
OT-23
UL94V-0
Js SMD MARKING CODE SOT23
jtp sot23
smd code marking js
N3 smd
JTp smd
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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C35B
Abstract: C35A diode c35 C35D C35G C35J C35K free diode
Text: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C35AR
C35B
C35A
diode c35
C35D
C35G
C35J
C35K
free diode
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Untitled
Abstract: No abstract text available
Text: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C35AR
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Untitled
Abstract: No abstract text available
Text: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C35AR
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Melles Griot Laser Diode driver
Abstract: SPLPL90_0 diode laser power supply melles griot Melles Griot 4,7uF 50v R1720 1000X 10UF 2N7002 47UF
Text: EVLDO2 Evaluation Board For The IXLDO2 Ultra High Speed Laser Diode Driver IC. Introduction The IXLDO2 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the diode. The IXLDO2 is capable
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17MHz,
600pS.
10MHZ.
Melles Griot Laser Diode driver
SPLPL90_0
diode laser power supply melles griot
Melles Griot
4,7uF 50v
R1720
1000X
10UF
2N7002
47UF
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C3536
Abstract: No abstract text available
Text: C3520, C3524, C3536 35A AVALANCHE AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C3520,
C3524,
C3536
C3520R
C3536
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Untitled
Abstract: No abstract text available
Text: C35A – C35K 35A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C35AR
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transistor c114
Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC
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Intel740TM
BAV99LT1
C3216X7R1C105KT000N
C0805C104K5RAC
C0805C103K5RAC
330PF
T491D106K016AS
C0805C331J5GAC
T491D226K016AS
transistor c114
c102 TRANSISTOR
TRANSISTOR c105
transistor c114 chip
c104 TRANSISTOR
C114 transistor
c107 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR C107
c101 TRANSISTOR
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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marking c35
Abstract: c35 transistor diode c35
Text: Central CMLM0305T MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM DESCRIPTION: The Central Semiconductor CMLM0305T is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode
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CMLM0305T
CMLM0305T
OT-563
200mA
115mA
100mA
500mA
22-May
marking c35
c35 transistor
diode c35
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C35 zener
Abstract: diode c35 LT3973-3.3 LT3971-3.3
Text: Z1 SMA1 . Z1 SMA100 1W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 6 @ + = ; Absolute Maximum Ratings Symbol Conditions Surface mount diode ; = 60 @ +
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SMA100
C353G
C35 zener
diode c35
LT3973-3.3
LT3971-3.3
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Untitled
Abstract: No abstract text available
Text: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching
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ERC35
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Untitled
Abstract: No abstract text available
Text: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching
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ERC35
ERC35
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ERC35
Abstract: No abstract text available
Text: ERC35 2.5A ( 200V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications C35 -02 Abridged type name 70 Lot No. •·· High speed switching
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ERC35
ERC35
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PTD4061-4XXX
Abstract: HI-TECH c18 G957 IEC825
Text: www.neophotonics.com VER000/ 190307 PTD4061-4XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle
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VER000/
PTD4061-4XXX(
100GHz
PTD4061-4XXX
HI-TECH c18
G957
IEC825
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EVR20
Abstract: diode 1n4742 Diode DO12 1N47S2 IN4756 IN4748 EVR10 EVR16 EVR30 in4758
Text: 3869720 GENERAL DIODE C O R P _ GENERAL DIODE CORP 86D 00351 D 7"— / 3 flb _ DE Bflb'íTSO 0DG0351 b 1 WATT SILICON ZENER DIODES . . . cont’d TYPE TYPE 1N3041 1N 3042 1N3043 1N3044 1N304S 00-12 Do-12 Do-12 Do-12 Do-12 75 82 91 100 110
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DDD351
1N3041
1N3042
Do-12
1N3043
1N3044
1N304S
1N3046
EVR20
diode 1n4742
Diode DO12
1N47S2
IN4756
IN4748
EVR10
EVR16
EVR30
in4758
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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PDF
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
T0-220
C35siÃ
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