L3006
Abstract: laser diode head
Text: . -V 6427525 rey I t C T SC £ ç IN C TENTAIVE SPECIFICATION 0D0Sb3S 0 | LASER DIODE E L EC T R ON I C S DE|b4275BS 59C 0 5 6 3 5 ELECTRON DEVICE D T_4i_ni; N D L3006 D AD .VD APPLICATION AIGaAs DOUBLE HETERO STRUCTURE LASER DIODE D E S C R IP T IO N N D L 3 0 0 6 laser diode is developed for DAD O igital Audio Disk), Video Disk optical head and non impact laser printer.
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b4275BS
L3006
L3006
laser diode head
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427S25
Abstract: No abstract text available
Text: E C ELECTRONICS INC ~72 Ï>Ë~| L.427SS5 000123=] 6427.525 N E C ELECTRONICS INC ; 72 C 09219 7 NEC Electronics Inc. 6N136 HIGH SPEED PHOTO COUPLER N EPO C SERIES D e sc rip tio n F e a tu re s The 6N136 is a high speed photo coupler containing G a A sP light emitting diode and a PN photo diode con
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427SS5
6N136
3000VDc
300ns
6N136
72C-0
oama42
427S25
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a106 diode
Abstract: diode A106 SF313 Diode Optical Smoke DEtector SE313
Text: 6427525 N E C ELECTRONICS 18268 D T* ^ ^ 4 2 7 5 2 5 GDlflShfl 1 D eT~ 98D INC_J38D ELECTRONICS INC " Tfl PRELIMINARY SPEC! F! CATIOIV NEC r ELECTRON DEVICE LIG H T EM ITTING DIODE SE3 13 / GaAs INFRARED EM ITTING DIODE -N EPO C SER IES - DESCRIPTION
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b427S25
SF313
Tt-25
lp-50
a106 diode
diode A106
Diode Optical Smoke DEtector
SE313
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skiip gb 120
Abstract: No abstract text available
Text: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage
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B7-38
skiip gb 120
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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DIODE Z54
Abstract: Laser microphone NDL3008 nec laser diode J22686
Text: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N
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b427SE5
T-41-05
NDL3008
NDL300
k457S2S
T-41-05
J22686
DIODE Z54
Laser microphone
NDL3008
nec laser diode
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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LTC4098-3.6
Abstract: 6n36
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
6n36
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLC
36134B6
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LTC4098-3.6
Abstract: 36A65 FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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Original
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BSM200GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
36A65
FBC 320
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2NU diode
Abstract: LTC4098-3.6 DIODE C06-15
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM400GA120DLC
36134B6
61FA3265
2NU diode
LTC4098-3.6
DIODE C06-15
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br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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Original
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BSM300GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br b2d
br- b2d
br - b2d
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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Original
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BSM100GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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PDF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM150GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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NEC K 2500
Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Text: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The
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b4E7525
6W7525
T-41-05
NDL3000
NDL3000
Tokyo456-3111,
J22686
LD-1104B
NEC K 2500
DAD 1000
05611
LD1104
laser diode for printer
NEC diode
J22686
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Untitled
Abstract: No abstract text available
Text: 98D 18268 D ¥ D E | b 4 2 7 S E S GDlñShfl 1 6427 525 N E C E L EC TRONI CS INC ELECTRONICS INC P R E L IM IN A R Y S P E C I Fl CAT10IV NEC LIG H T E M IT T IN G DIODE ELECTRON DEVICE SÉ3Ï3 G a A s IN FR A RED EM ITTIN G DIODE -N E P O C SE R IE S- DESCRIPTION
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CAT10IV
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Untitled
Abstract: No abstract text available
Text: ST a ^ »E|b4S7SaS 6642 427525 M bv O DDSt.ll N E C fi TENTATIVE S P E C IF IC ATION ELECTRONICS'INC “ 59C 05611 D T-41-05 LASER DIODE NDL3000 E L E C T R O N D E V IC E DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETERO STRU CTU RE LA SER DIODE D E S C R IP T IO N
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T-41-05
NDL3000
NDL3000
J22686
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Untitled
Abstract: No abstract text available
Text: 639nm laser diode module, elliptical beam, 12mm diameter A co m pact, ergonom ically designed 639nm laser diode m odule suitable for a w ide range of applications. Laser diode modules from the Optoelectronics C om pany are available in wavelengths from 405nm to 852nm, in a w ide range of optical output
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639nm
405nm
852nm,
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Untitled
Abstract: No abstract text available
Text: -fid?Z£25 N E C ELECTRONICS l í S l u « DD1 . I Î , L r INC 98D “ 185:21 T~y/-a^ TA S H E IT P c lim im n l NEC LASER DIODE ELECTRON DEVICE NDL3110 830 nm OPTICAL DISK MEMORY APPLICATION AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE D ESCR IPTIO N
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NDL3110
1987M
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky barrier diode encapsulated in an S C -79 S O D 523 ultra sm all
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1PS79SB40
SC-79
115002/00/01/pp8
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URG30120C
Abstract: RURG30120CC
Text: RURG30120CC S E M I C O N D U C T O R 30A, 1200V Ultrafast Dual Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURG30120CC
110ns
O-247
110ns)
URG30120C
RURG30120CC
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s2e diode
Abstract: BH204 DIODE S2E
Text: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz
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SH92103
SH93103
BH204
SH92103
SH93103
s2e diode
DIODE S2E
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104S14
Abstract: No abstract text available
Text: _ ~5T 6427525 N E C E L E C T R O N IC S 59C IN C 05641 T-41-05 D t.457SES DD O S b 4 1 b ’ J ” TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE NDL3009 D AD , VD A PPLICA TIO N AIGaAs D O U B LE HETERO S T R U C T U R E L A S E R D IO D E SEP. 7,1984
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T-41-05
457SES
NDL3009
--VR-15V
J22686'
104S14
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05641
Abstract: optical head laser cd disk laser diode 780 nm cd NDL3009 J22686
Text: ~~ ~5T _ 6 4 2 752 5 N E C ELECTRONICS 59C INC 05641 D T -41-05 D eT | t,427SE5 D D 0 S b 4 1 b TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE N DL3009 DAD, VD APPLICATION AIGaAs DOUBLE HETERO STRU CTU RE LA SER DIODE SEP. 7,1984 DESCRIPTIO N NDL300g laser diode is developed for D A D Digital Audio D isk , Video Disk optical head and non impact laser printer.
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ta457SES
DDOSb41
T-41-05
NDL3009
NDL300g
42752S
J22686
05641
optical head laser cd disk
laser diode 780 nm cd
NDL3009
J22686
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