SSCDA05HE
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10
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SSCDA05HE
SSCDA05HE
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Bridge diode 35 amps
Abstract: DIODE 35 S469-05 S469
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000 10 6 100
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S469-05
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Bridge diode 35 amps
DIODE 35
S469-05
S469
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S25A20FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 200 16 10 125
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S25A20FR
S25A20FR
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STDA05HE
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10
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STDA05HE
STDA05HE
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S25A40FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 400 16 10 125
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S25A40FR
S25A40FR
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DIODE 35
Abstract: S469-04
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 800 10 6 100
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S469-04
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DIODE 35
S469-04
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S25A60FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600 16 10 125
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S25A60FR
S25A60FR
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S10A10FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 10 7.5
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S10A10FR
S10A10FR
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S25A10FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 16 10 125
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S25A10FR
S25A10FR
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S10A05FR
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10 7.5 100
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S10A05FR
S10A05FR
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10 Gbps TOSA
Abstract: dfb laser diode
Text: 10 Gbps 1310 nm MQW DFB Laser Diode Modules-TOSA PRELIMINARY C-13-DFB10-TX-SSC2 Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR
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C-13-DFB10-TX-SSC2
LUMNDS192-0502
10 Gbps TOSA
dfb laser diode
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peltier cooler
Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA
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L8413
SE-171-41
LLD1007E02
peltier cooler
Peltier module
58520
L8413
808nm
source photonics
LLD1007E02
817 diode
CW laser diode
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Photo Diode LED
Abstract: Diode 5013M1C LED 10mm 5013M1D M2 DIODE diode led led 8mm "Silicon Black" LED SMD
Text: Elecsound LED Series Products Photo Diode LED Datasheet Chip BVCEO VCE IC ON Rise & Fall Part Number Ee=mW/c Material Lens Color Min.(V) 5013M1C Silicon Water Clear 30 1 0.4 5013M1D Silicon Black 30 1 0.4 m2 Max.(V) Ee=mW/c Min.(V) Time(µs) 1 0.7 10/10 1
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5013M1C
5013M1D
Photo Diode LED
Diode
5013M1C
LED 10mm
5013M1D
M2 DIODE
diode led
led 8mm
"Silicon Black"
LED SMD
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10 Gbps TOSA
Abstract: C-13-010-TX-SSC2
Text: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator
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C-13-010-TX-SSC2
LUMNDS191-0502
10 Gbps TOSA
C-13-010-TX-SSC2
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HVL147M
Abstract: PUSF0012ZA-A RKP413KS
Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)
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RKP413KS
REJ03G1613-0100
MFP12)
MFP12
PUSF0012ZA-A
HVL147M
REJ03G1613-0100
PUSF0012ZA-A
RKP413KS
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mark M7
Abstract: No abstract text available
Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)
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RKP413KS
REJ03G1613-0100
MFP12)
RKP413KS
MFP12
PUSF0012ZA-A
HVL147M
mark M7
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Untitled
Abstract: No abstract text available
Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)
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RKP413KS
REJ03G1613-0100
MFP12)
MFP12
PUSF0012ZA-A
HVL147M
REJ03G1613-0100
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Untitled
Abstract: No abstract text available
Text: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)
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RKP411KS
REJ03G1574-0200
MFP12)
MFP12
PUSF0012ZA-A
RKP200KP
REJ03G1574-0200
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Untitled
Abstract: No abstract text available
Text: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)
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RKP411KS
REJ03G1574-0200
MFP12)
RKP411KS
MFP12
PUSF0012ZA-A
RKP200KP
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f10nc15m
Abstract: F10NC15 SF10NC15M marking WMM SF-10N
Text: Schottky Barrier Diode Twin Diode SF 10 N C 15 M Wtm OUTLINE 150 V 10 A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 lÆ -JU K • fîlR=0.2mA • Low lR=0.2mA • if & f lÆ S Ê ê C U C C U • « 1 IÎE 2kV«E • Resistance for thermal run-away
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SF10NC15M
FTQ-220A
F10NC15M
waveli50Hz
f10nc15m
F10NC15
SF10NC15M
marking WMM
SF-10N
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KD 472 M mov
Abstract: TM 0134 led driver triac tic 226 q 391 2 amp triac driver opto triac tic 109
Text: MOTOROLA Order this document by MQC2R60-10/D SEMICONDUCTOR TECHNICAL DATA Advance Information M O C 2R 60-10* M O C 2R 60-15 POWER OPTO Isolator 2 Amp Random-Phase Triac Output * Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically
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MQC2R60-10/D
UL508
-----------------------------2PHX33734P-0
MOC2R60-10/D
KD 472 M mov
TM 0134 led driver
triac tic 226
q 391
2 amp triac driver opto
triac tic 109
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol |Conditions1> IGBT & Inverse Diode VcES V c c 9 Operating D C link voltage lc Theatsink T , 3' IGBT & Diode A C, 1 min. V is o i4 If ~ 25 C = 25 °C Theatsink —25 °C; tp < 1 ms tp = 10 ms; sin,; Tj = 150 °C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 10 J L2 C 4 8 A #U 10 J L2 C 48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current
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10JL2C48A,
U10JL2C48A
10JL2C48A
12-10D1A
12-10D2A
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dl520
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission
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bM27SES
NDL5102
L427SES
NDL5102
NDL5102C
DL5200
NDL5100
NDL5100C
NDL5100P*
dl520
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