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    DIODE BY 339 Search Results

    DIODE BY 339 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BY 339 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    338 sot-23

    Abstract: D49 diode LF MARKING CODE 338 marking code LF400
    Text: Central“ CMPD5001 CMPD5001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    CMPD5001 CMPD5001S OT-23 CMPD5001S CPD41 338 sot-23 D49 diode LF MARKING CODE 338 marking code LF400 PDF

    1N21B diode

    Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
    Text: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.


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    MIL-S-19500/339 1N358A, 1N358AR, 1N358AM, IN358AMR 1N358A 1N358AR 1N358AM 1N358AMR MIL-S-19500. 1N21B diode 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic


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    OC701 OC701 E86831 b7E4240 b72M24D PDF

    S6090

    Abstract: AC voltmeter diagram k 2541 30v LH7070 LH7070CN LH7071CN 1401S
    Text: June 1989 LH7070 Series Precision BCD Buffered Reference LH7071 Series Precision Binary Buffered Reference General Description The LH7070 and LH7071 are precision, three terminal, volt­ age references consisting of a temperature compensated zener diode driven by a current regulator and a buffer ampli­


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    LH7070 LH7071 2-26A AA32096 S6090 AC voltmeter diagram k 2541 30v LH7070CN LH7071CN 1401S PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    ic mm74hc

    Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
    Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC


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    MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC PDF

    38AC126V2

    Abstract: SKIIP38AC126V2 SKIIP 38AC126V2
    Text: SKiiP 38AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  0 ' 1/      !    0 (' 6748 1 ! ; 3 - = Values Units 3(44 339 6998 (34 < (4 ,   , > ?4 ### @ 3'4 1 339 6998 (34   > ?4 ### @ 3'4 1 3%4


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    38AC126V2 38AC126V2 SKIIP38AC126V2 SKIIP 38AC126V2 PDF

    38AC12

    Abstract: No abstract text available
    Text: SKiiP 38AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  / ' 01      !    / (' 6748 0  / (' 6748 01 ! ; 3 - = Values Units 3(44 339 6998 (&% 637%8 < (4 ,   , > ?4 ### @ 3'4 0 339 6998 (&% 637%8


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    38AC126V2 38AC12 PDF

    38AC126V2

    Abstract: No abstract text available
    Text: SKiiP 38AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  / ' 01      !    / (' 6748 0  / (' 6748 01 ! ; 3 - = Values Units 3(44 339 6998 (&% 637%8 < (4 ,   , > ?4 ### @ 3'4 0 339 6998 (&% 637%8


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    38AC126V2 38AC126V2 PDF

    38AC126V2

    Abstract: No abstract text available
    Text: SKiiP 38AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  0 ' 1/      !    0 (' 6748 1 ! ; 3 - = Values Units 3(44 339 6998 (34 < (4 ,   , > ?4 ### @ 3'4 1 339 6998 (34   > ?4 ### @ 3'4 1 3%4


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    38AC126V2 38AC126V2 PDF

    38AC126V1

    Abstract: No abstract text available
    Text: SKiiP 38AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  / ' 01      !    / (' 6748 0  / (' 6748 01 ! ; 3 - = Values Units 3(44 339 6998 (&% 637%8 < (4 ,   , > ?4 ### @ 3'4 0 339 6998 (&% 637%8


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    38AC126V1 38AC126V1 PDF

    semikron skiip 33

    Abstract: No abstract text available
    Text: SKiiP 38AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$2  : ,$2  0 ' 1/      !    0 (' 6748 1 ! ; 3 - = Values Units 3(44 339 6998 (34 < (4 ,   , > ?4 ### @ 3'4 1 339 6998 (34   > ?4 ### @ 3'4 1 3%4


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    38AC126V2 semikron skiip 33 PDF

    DIODE BY 339

    Abstract: No abstract text available
    Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 Vds 500 V b 11.5 A ^DS on 0.5 £2 Package Ordering Code TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


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    O-218 C67078-S3133-A2 O-218AA DIODE BY 339 PDF

    siemens partial discharge catalog

    Abstract: ACPL-339J
    Text: ACPL-339J Dual-Output Gate Drive Optocoupler Interface with Integrated VCE DESAT Detection, FAULT and UVLO Status Feedback Data Sheet Description Features The ACPL-339J is an advanced 1.0 A dual-output, easy-touse, intelligent IGBT and Power MOSFET gate drive optocoupler interface. Uniquely designed to support MOSFET


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    ACPL-339J ACPL-339J AV02-3784EN siemens partial discharge catalog PDF

    RURG30120

    Abstract: TA49031
    Text: RURG30120 Data Sheet January 2000 File Number 3399.3 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial


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    RURG30120 RURG30120 110ns) 110ns TA49031 PDF

    AV02-3784EN

    Abstract: ACPL-339J SI7611 heating controller siemens logo 339J SI7414 acpl-339 SI7415 pi controller siemens logo acpl339
    Text: ACPL-339J Dual-Output Gate Drive Optocoupler Interface with Integrated VCE DESAT Detection, FAULT and UVLO Status Feedback Data Sheet Description Features The ACPL-339J is an advanced 1.0 A dual-output, easy-touse, intelligent IGBT and Power MOSFET gate drive optocoupler interface. Uniquely designed to support MOSFET


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    ACPL-339J ACPL-339J AV02-3784EN SI7611 heating controller siemens logo 339J SI7414 acpl-339 SI7415 pi controller siemens logo acpl339 PDF

    bss159

    Abstract: SI7415 BSP149 equivalent si7611
    Text: ACPL-339J Dual-Output Gate Drive Optocoupler Interface with Integrated VCE DESAT Detection, FAULT and UVLO Status Feedback Data Sheet Description Features The ACPL-339J is an advanced 1.0 A dual-output, easy-touse, intelligent IGBT and Power MOSFET gate drive optocoupler interface. Uniquely designed to support MOSFET


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    ACPL-339J ACPL-339J AV02-3784EN bss159 SI7415 BSP149 equivalent si7611 PDF

    ECH86

    Abstract: siemens partial discharge catalog
    Text: ACPL-339J Dual-Output Gate Drive Optocoupler Interface with Integrated VCE Desaturation Detection, Fault and UVLO Status Feedback Data Sheet Description Features The ACPL-339J is an advanced 1.0 A dual-output, easy-touse, intelligent IGBT and Power MOSFET gate drive optocoupler interface. Uniquely designed to support MOSFET


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    ACPL-339J ACPL-339J AV02-3784EN ECH86 siemens partial discharge catalog PDF

    RUR30120

    Abstract: RURP30120
    Text: RURP30120 Data Sheet January 2000 File Number 3397.3 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar


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    RURP30120 RURP30120 110ns) 110ns RUR30120 PDF

    DIODE BY 339

    Abstract: DIODE NF 339 70h10
    Text: BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 339 500 V 11.5 A 0.5 Ω TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3133-A2 DIODE BY 339 DIODE NF 339 70h10 PDF

    EB701

    Abstract: MC33937
    Text: Freescale Semiconductor Engineering Bulletin EB701 Rev. 1.0, 1/2009 MC33937 Double RESET Timing Considerations Introduction The 33937 high side pre-driver latches may begin in an indeterminate state, which draws more current than normal about 5.0 mA more per phase , when first powered up. This state will also result in a


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    EB701 MC33937 EB701 PDF

    ppt on ic engine

    Abstract: 12v 200w power supplier schematic diagrams
    Text: Freescale Semiconductor Technical Data Document Number: MC33981 Rev. 11.0, 7/2012 Single High Side Switch 4.0 mOhm , PWM clock up to 60 kHz 33981 The 33981 is a high frequency, self-protected 4.0 m RDS(ON) high side switch used to replace electromechanical relays, fuses, and


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    MC33981 ppt on ic engine 12v 200w power supplier schematic diagrams PDF