Untitled
Abstract: No abstract text available
Text: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1144
ph979-8220,
100mm
MXP1144
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photovoltaic cell
Abstract: Photovoltaic MXP1144 "PHOTOVOLTAIC CELL"
Text: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1144
ph-979-8220,
100mm
MXP1144
photovoltaic cell
Photovoltaic
"PHOTOVOLTAIC CELL"
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Untitled
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 500W > SA series SA Series RoHS Description The SA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional Features
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IEC801-2)
DO-15
IEC801-4)
DO-204AC
RS-296E
DM-0016
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Untitled
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 3000W > 3KP series 3KP Series RoHS Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional
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E230531
RS-296E
DM-0016
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Untitled
Abstract: No abstract text available
Text: MXP1144P PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ̇ Oxide passivated structure for very low leakage currents ̇ Epitaxial structure minimizes
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MXP1144P
for92704,
100mm
MXP1144
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PHOTOVOLTAIC CELL
Abstract: "PHOTOVOLTAIC CELL" Photovoltaic by-pass MXP1144P MXP1144
Text: MXP1144P PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Oxide passivated structure for very low leakage currents
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MXP1144P
p-979-8220,
100mm
MXP1144
PHOTOVOLTAIC CELL
"PHOTOVOLTAIC CELL"
Photovoltaic
by-pass
MXP1144P
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1N6688
Abstract: 1N6689 MIL-STD-129 1N6689US
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/627A
MIL-S-19500/627
1N6688,
1N6689,
1N6688US,
1N6689US,
MIL-PRF-19500.
1N6688
1N6689
MIL-STD-129
1N6689US
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.
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1n6781
Abstract: transistor 649A MIL-PRF-19500 schottky rectifier 1N678
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1998 INCH-POUND MIL-PRF-19500/649A 16 August 1998 SUPERSEDING MIL-PRF-19500/649 18 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/649A
MIL-PRF-19500/649
1N6781
MIL-PRF-19500.
1n6781
transistor 649A
MIL-PRF-19500 schottky rectifier
1N678
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P6KE30A diode
Abstract: p6ke220ca P6KE36A diode E128 diode P6KE P6KE440C vs bi 187 P6KE10A P6KE11 P6KE12
Text: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.
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P6KE400CA
P6KE440
P6KE440C
P6KE440A
P6KE440CA
P6KE30A diode
p6ke220ca
P6KE36A diode
E128
diode P6KE
P6KE440C
vs bi 187
P6KE10A
P6KE11
P6KE12
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1N6771
Abstract: 1N6768 1N6768R 1N6769 1N6769R 1N6770 1N6771R T0-257AA
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1998 MIL-PRF-19500/644A 16-August -1998 SUPERSEDING MIL-PRF-19500/644 18 April 1997 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/644A
16-August
MIL-PRF-19500/644
1N6768
1N6771
1N6768R
1N6771R
1N6769
1N6769R
1N6770
1N6771R
T0-257AA
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1N6683
Abstract: 1N6685 1N6685US 1N6684 1N6640US
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
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MIL-PRF-19500/625A
MIL-S-19500/625
1N6683,
1N6684,
1N6685,
1N6683US,
1N6684US,
1N6685US
1N6683
1N6685
1N6685US
1N6684
1N6640US
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schottky diode 100A inventory
Abstract: 1N6930UTK1 JS6930 1N6932UTK1 BT 342 project 1N693 ms 1051 1n6930
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/725A 7 September 2005 SUPERSEDING MIL-PRF-19500/725 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/725A
MIL-PRF-19500/725
1N6930UTK1,
1N6931UTK1,
1N6932UTK1,
1N6930UTK1CS,
1N6931UTK1CS,
1N6932UTK1CS,
1N6930UTK1AS,
1N6931UTK1AS,
schottky diode 100A inventory
1N6930UTK1
JS6930
1N6932UTK1
BT 342 project
1N693
ms 1051
1n6930
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR
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MIL-PRF-19500/500C
MIL-S-19500/500B
1N5555
1N5558,
1N5907,
1N5629A
1N5665A
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lf 721a
Abstract: 721A schottky diode 100A inventory 721a dimensions 1N6895UTK1CS BT 342 project 1N689 1n6892
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/721A 7 September 2005 SUPERSEDING MIL-PRF-19500/721 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/721A
MIL-PRF-19500/721
1N6892UTK1,
1N6893UTK1,
1N6894UTK1,
1N6895UTK1,
1N6892UTK1CS,
1N6893UTK1CS,
1N6894UTK1CS,
1N6895UTK1CS,
lf 721a
721A
schottky diode 100A inventory
721a dimensions
1N6895UTK1CS
BT 342 project
1N689
1n6892
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LY2S
Abstract: omron LY4N PTF08A-E LY2ND 562K PFP-100N2 PT08 PT08QN PT11 PTF11A
Text: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.
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X301-E-1
LY2S
omron LY4N
PTF08A-E
LY2ND
562K
PFP-100N2
PT08
PT08QN
PT11
PTF11A
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1N3993RA
Abstract: 1N3015 PLUS
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 September 1997 INCH POUND MIL-PRF-19500/124H 20 June 1997 SUPERSEDING MIL-S-19500/124G 15 October 1992 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB
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MIL-PRF-19500/124H
MIL-S-19500/124G
1N2970
1N2977,
1N2979,
1N2980,
1N2982,
1N2984
1N2986,
1N2988
1N3993RA
1N3015 PLUS
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mil-s-19500 qpl jantx1n5518b
Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,
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MIL-PRF-19500/437D
MIL-S-19500/437C
1N5518B-1,
1N5518C-1,
1N5518D-1
1N5546B-1,
1N5546C-1,
1N5546D-1,
1N5518BUR-1,
1N5518CUR-1,
mil-s-19500 qpl jantx1n5518b
1N5521B JANTXV
MIL-prf-19500/437
1N5518B-1
1N5518BUR-1
1N5518C-1
1N5518CUR-1
1N5518DUR-1
1N5546B-1
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SP8K1
Abstract: Model 102
Text: SPICE PARAMETER SP8K1 by ROHM TR Div. * SP8K1 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT SP8K1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=33.638E-6
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0000E-6
638E-6
000E-3
622E-3
0000E6
00E-12
538E-12
74E-12
0000E-3
SP8K1
Model 102
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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sot-23 marking code T25
Abstract: CMPD914 sot-23 MARKING CODE JS
Text: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for
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CMPD914
OT-23
100pA
13-November
OT-23
sot-23 marking code T25
sot-23 MARKING CODE JS
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l7949
Abstract: HP STEP RECOVERY DIODES
Text: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw ard technique fo r m ultip lie r design is pres ented. The in p u t c irc u it is a low pass filte r w hich allows all of the in pu t pow er to be absorbed by the diode and reflects
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D-7030
l7949
HP STEP RECOVERY DIODES
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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rifa pme 285 mb
Abstract: PME 285 MB RIFA rifa pme capacitor rifa pme 285 mb rifa pme 285 rifa pme 289 mb rifa pme 289 MA EON Q32B MC33035 SCR DC permanent magnet motor
Text: I AN1101 One-Horsepower Off-Line Brushless Permanent Magnet Motor Drive Ken Berringer Semiconductor Products Sector Discrete Applications Laboratory ruggedness allow the diode to withstand the high stresses im INTRODUCTION posed by forced commutation. Energy rated E-FETs are
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AN1101
MC33035
3386P1
SS12SDP2
PE-96188
SW336
1N4697
rifa pme 285 mb
PME 285 MB RIFA
rifa pme
capacitor rifa pme 285 mb
rifa pme 285
rifa pme 289 mb
rifa pme 289 MA
EON Q32B
SCR DC permanent magnet motor
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