BY 255 diode
Abstract: No abstract text available
Text: BY 251.BY 255 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device
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MMSD914T1/D
MMSD914T1
OD-123
OD-123
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SF1154
Abstract: SF-1154
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A800LM
A800LE
A800LD
A800LC
A800LB
A800LA
A800L
A800PT
A800PN
LS2037
SF1154
SF-1154
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MAX5968
Abstract: 12VSB cb amplifier
Text: 19-5115; Rev 1; 2/10 Circuit-Breaker and Ideal Diode Controller with Digital Monitoring Functions The MAX5968 soft-switch and ideal diode controller protects systems with redundant DC-DC converter modules against failure of the converter by controlling external
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MAX5968
12VSB
cb amplifier
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MMAD130
Abstract: MMAD1103 MMAD1107 MONOLITHIC DIODE ARRAYS MMAD1105 MMAD1109
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA bV M M A m 3 o/"d M o n o lith ic D io de A rra y s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching
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MMAD130/D
51A-03
MMAD130
MMAD1103
MMAD1107
MONOLITHIC DIODE ARRAYS
MMAD1105
MMAD1109
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DD200KB160
Abstract: DD100KB160 DD240KB160 DD160KB160 DG20AA DG20AA120 DG20AA160 DG20AA40 DG20AA80 3-element diode
Text: DIODE ISOLATED MOLD TYPE DG20AA UL;E76102 （M） DG20AA is a medium power isolated module diode suitable for wide range of industrial and home elctronics use. DG20AA is highly reliable by glass pasivation. 39.2 MAX 20.2 MAX 2-φ4.2±0.1 ● IF （AV） ＝20A,
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DG20AA
E76102
DG20AA
VRRM1600V
DG20AA40
DG20AA80
DG20AA120
DG20AA160
DD200KB160
DD100KB160
DD240KB160
DD160KB160
DG20AA120
DG20AA160
DG20AA40
DG20AA80
3-element diode
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Untitled
Abstract: No abstract text available
Text: T0815 3 Channel Laser Driver with RF Osc. and APC Amplifier Description T0815 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel
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T0815
T0815
D-74025
11-Oct-01
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Untitled
Abstract: No abstract text available
Text: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features 8 9 1 9 9 -) 1 9 9 ) 9
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Untitled
Abstract: No abstract text available
Text: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features 8 9 1 9 9 -) 1 9 9 ) 9
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide
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MBR2535CTL/D
21A-06
O-220AB)
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omron MK3P5-S
Abstract: omron MK3P5-S relay MK3P omron OMRON MK2 omron MK2P MK3P 1 omron MK3P5-I 3PDT relay OMRON RELAY 12 V AC OMRON MK3P
Text: General Purpose Relay MK Exceptionally reliable general purpose relay Long life minimum 100,000 electrical operations assured by silver contacts Built-in operation indicator (mechanical, LED), diode surge suppression, Varistor surge suppression The contact operation can be easily
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1-800-55-OMRON
omron MK3P5-S
omron MK3P5-S relay
MK3P omron
OMRON MK2
omron MK2P
MK3P 1
omron MK3P5-I
3PDT relay
OMRON RELAY 12 V AC
OMRON MK3P
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b1545 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF1545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF1545CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
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MBRF1545CT/D
MBRF1545CT
b3b7255
GGT0741
b1545 motorola
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BZu 120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD2837LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc Vr 30 50 Vdc >FM 450 300 mAdc io 150 100 mAdc Symbol
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MMBD2837LT1/D
MMBD2837LT1
MMBD2838LT1
--------------MMBD2837LT1/D
BZu 120
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AK2572
Abstract: QFN28 ASAHI KASEI L 817
Text: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES •Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.
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AK2572]
AK2572
10mA/0
MS0290-E-01>
AK2572
QFN28
ASAHI KASEI L 817
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 February 2012. INCH-POUND MIL-PRF-19500/507F 23 November 2011 SUPERSEDING MIL-PRF-19500/507E 7 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
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MIL-PRF-19500/507F
MIL-PRF-19500/507E
1N6036A
1N6072A
MIL-PRF-19500.
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1N3993RA
Abstract: 1N3015 PLUS
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 September 1997 INCH POUND MIL-PRF-19500/124H 20 June 1997 SUPERSEDING MIL-S-19500/124G 15 October 1992 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB
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MIL-PRF-19500/124H
MIL-S-19500/124G
1N2970
1N2977,
1N2979,
1N2980,
1N2982,
1N2984
1N2986,
1N2988
1N3993RA
1N3015 PLUS
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Untitled
Abstract: No abstract text available
Text: GaAs PIN Diode Chips RoHS Compliant Rev 1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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MA4GP022-277
Abstract: M541 MA4GP030 GaAs p-i-n diodes MA4GP030-30 MAX356
Text: GaAs PIN Diode Chips RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,
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MIL-PRF-19500/500D
MIL-S-19500/500C
1N5555
1N5558,
1N5907,
1N5629A
1N5665A,
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D4017
Abstract: CD4017 74C174
Text: A I R C H O ctober 1987 I L D Revised January 1999 S E M IC G N D U C T Ü R tm CD40174BC • CD40175BC Hex D-Type Flip-Flop • Quad D-Type Flip-Flop General Description All inputs are protected from static discharge by diode clam ps to V DD and V Ss- All flip-flops are controlled by a com m on clock and a com
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CD40174BC
CD40175BC
CD40175BC
40174BC
D40175BC
D4017
CD4017
74C174
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Untitled
Abstract: No abstract text available
Text: You are in Databook Vol. 1 • Click for Main Menu Application Hint 15 Micrel Application Hint 15 A High Current VCC Switching Matrix by Brenda Kovacevic Each FET has its body internally connected to its source, resulting in an intrinsic diode between the body and the drain
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MIC5014
MIC5014
MIC2557
MIC5014*
MIC2558
MIC5016
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siemens sda 2208
Abstract: Q67000-A8235 14CE1-5 block diagram for simple IR transmitter
Text: SIEM ENS IR Remote Control Transmitter with IR Diode Driver Preliminary Data SDA 2208-3 Bipolar 1C The SDA 2208-3 is designed as a remote control transm itter for direct driving of infrared transm itter diodes. The instructions are generated by an input matrix i. e. keyboard in the
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Q67000-A8235
P-DIP-20
siemens sda 2208
14CE1-5
block diagram for simple IR transmitter
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