BY 255 diode
Abstract: No abstract text available
Text: BY 251.BY 255 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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AK2573A
Abstract: AK2573AVB C101 620CH
Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)
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AK2573A]
AK2573A
MS0189-E-01>
AK2573A
AK2573AVB
C101
620CH
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marking code C15
Abstract: AK2574 AK2574VB R132 R133
Text: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF
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AK2574]
AK2574
AK2574
MS0266-E-00>
marking code C15
AK2574VB
R132
R133
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alcoa electrical joint compound
Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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185oC
-40oC
A800Lerford
LS2037
SF1154
DC550
G322L
alcoa electrical joint compound
dissipator
presspak diode
A800
A800L
A800LA
A800LB
G322L
A800LD
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SF1154
Abstract: SF-1154
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A800LM
A800LE
A800LD
A800LC
A800LB
A800LA
A800L
A800PT
A800PN
LS2037
SF1154
SF-1154
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MAX5968
Abstract: 12VSB cb amplifier
Text: 19-5115; Rev 1; 2/10 Circuit-Breaker and Ideal Diode Controller with Digital Monitoring Functions The MAX5968 soft-switch and ideal diode controller protects systems with redundant DC-DC converter modules against failure of the converter by controlling external
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MAX5968
12VSB
cb amplifier
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SF1154
Abstract: dissipator presspak A800 A800L A800LA A800LB A800LC A800LD A800LE
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A800LM
A800LE
A800LD
A800LC
A800LB
A800LA
A800L
A800PT
A800PN
LS2037
SF1154
dissipator
presspak
A800
A800L
A800LA
A800LB
A800LC
A800LD
A800LE
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atmel 0635
Abstract: No abstract text available
Text: T0816 Three Channel Laser Driver with RF Oscillator Description T0816 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel
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T0816
T0816
D-74025
31-Aug-01
atmel 0635
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DD200KB160
Abstract: DD100KB160 DD240KB160 DD160KB160 DG20AA DG20AA120 DG20AA160 DG20AA40 DG20AA80 3-element diode
Text: DIODE ISOLATED MOLD TYPE DG20AA UL;E76102 （M） DG20AA is a medium power isolated module diode suitable for wide range of industrial and home elctronics use. DG20AA is highly reliable by glass pasivation. 39.2 MAX 20.2 MAX 2-φ4.2±0.1 ● IF （AV） ＝20A,
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DG20AA
E76102
DG20AA
VRRM1600V
DG20AA40
DG20AA80
DG20AA120
DG20AA160
DD200KB160
DD100KB160
DD240KB160
DD160KB160
DG20AA120
DG20AA160
DG20AA40
DG20AA80
3-element diode
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Untitled
Abstract: No abstract text available
Text: T0820 Four Channel Laser Driver with RF Oscillator Description The T0820 is a laser diode driver for the operation of a grounded laser diode for writable optical drives. It includes four channels for four different optical power levels which are controlled by a separate IC. The read
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T0820
T0820
D-74025
17-Aug-01
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Untitled
Abstract: No abstract text available
Text: T0815 3 Channel Laser Driver with RF Osc. and APC Amplifier Description T0815 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel
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T0815
T0815
D-74025
11-Oct-01
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Untitled
Abstract: No abstract text available
Text: T0815 3 Channel Laser Driver with RF Osc. and APC Amplifier Description T0815 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel
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T0815
T0815
D-74025
31-Aug-01
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BY 255 diode
Abstract: DIODE BY 255 DIODE 255 BY 255 Diode rectifier by 255 BY251-BY255 diode standard
Text: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features 8 9 1 9 9 -) 1 9 9 ) 9
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Untitled
Abstract: No abstract text available
Text: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features 8 9 1 9 9 -) 1 9 9 ) 9
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Untitled
Abstract: No abstract text available
Text: PRODUCT SUMMARY 1645 nm Q-switched Diode-Pumped Solid State Laser The Princeton Lightwave Q-switched diode-pumped solid-state laser Q-DPSSL provides highenergy mJ-class optical pulses at an eye-safe short-wave infrared wavelength of 1645 nm. This laser employs resonant pumping of an Er:YAG gain medium using technology pioneered by
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TEM00
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OMRON MK2
Abstract: socket MK3P omron MK3P omron OMRON MK3P PF083A-E PF113A-E omron MK3P5-I PFP-50N PL08 PL11
Text: General Purpose Relay MK • Exceptionally reliable general purpose relay. • Long life minimum 100,000 electrical operations assured by silver contacts. • Built-in operation indicator (mechanical, LED), diode surge suppression, Varistor surge suppression.
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MK3P5-S-AC120)
J01C-E-01
OMRON MK2
socket MK3P omron
MK3P omron
OMRON MK3P
PF083A-E
PF113A-E
omron MK3P5-I
PFP-50N
PL08
PL11
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MK2P-I application
Abstract: MK3P omron OMRON MK2 omron MK3P5-I omron MK2P-s MK2 relay datasheet MK3P X 5 omron PLC RELAY OMRON omron MK2P MK2P-I connection
Text: General Purpose Relay MK • Exceptionally reliable general purpose relay. • Long life minimum 100,000 electrical operations assured by silver contacts. • Built-in operation indicator (mechanical, LED), diode surge suppression, Varistor surge suppression.
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MK3P5-S-AC120)
J01C-E-01
MK2P-I application
MK3P omron
OMRON MK2
omron MK3P5-I
omron MK2P-s
MK2 relay datasheet
MK3P X 5 omron
PLC RELAY OMRON
omron MK2P
MK2P-I connection
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AD130
Abstract: D1107 AD1105
Text: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
0EH0b32
AD130
D1107
AD1105
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device
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MMSD914T1/D
MMSD914T1
OD-123
OD-123
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MMAD130
Abstract: MMAD1103 MMAD1107 MONOLITHIC DIODE ARRAYS MMAD1105 MMAD1109
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA bV M M A m 3 o/"d M o n o lith ic D io de A rra y s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching
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MMAD130/D
51A-03
MMAD130
MMAD1103
MMAD1107
MONOLITHIC DIODE ARRAYS
MMAD1105
MMAD1109
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MAD1103P
Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
Text: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a
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MAD130
MADI103
MAD1107
MADI108
C309M
MAD1103P
mad1108P
MAD1107P
MAD130P
MAD1103
MAD130C
817 opto
IFR 740
MAD1103F
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diode 104
Abstract: mv104 MV-104 TO226AA CI 2904
Text: MOTOROLA Order this document by MV104/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the -line application requiring back-to-back diode configurations for minimum
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MV104/D
MV104)
O-226AA)
diode 104
mv104
MV-104
TO226AA
CI 2904
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dissipator
Abstract: GE-SPCO SF116 TI 745A A800 A800L A800LA A800LB A800LC A800LD
Text: GE-SPCO 34E D • 3ß74Sß4 0000156 b H G E S P A800 —-oc-tb 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by Staiic ¿'öwer Component uoeràtion Malvern,PA USA G E CO/ S T A T I C PUR CMPN T
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D0D012Ã
2600V14400
LS2037
SF1154
DC550
G322L
dissipator
GE-SPCO
SF116
TI 745A
A800
A800L
A800LA
A800LB
A800LC
A800LD
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