skhi 24 r
Abstract: No abstract text available
Text: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units % &)25$
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DIODE 6K
Abstract: SHINDENGEN DIODE
Text: 3 Phase Bridge Diode Diode Module S30VT S30VTA OUTLINE DIMENSIONS 800V 30A « iv •sQipyo>^-y vmsmzfUyiJ •BBJEE. HI FSM 0 ju y ffl VTA$>^y i* • I 7 3 > •F A . RATINGS • lê fc tlS ^ ïÈ fê m Absolute Maximum Ratings a. h Item Symbol m m Storage Temperature
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S30VT
S30VTA
S30VT60
S30VT80
S30VTA60
S30VTA80
S30VTD
/S30VTA
DIODE 6K
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A U n it • m m i&fiUAiOo <*[& *>]- Kîîëfdlmaxx*1.6 ?+o f S10VTA type has solid w ire lead terminals. ( l l MAXX fJl,6) • RATING S A b so lu te Maximum R a tin g s
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S10VTD/S10VTAD
S10VTA
S10VT60,
S10VT80,
S10VTA80
S10VTA60
S10VT80
SI0VT60
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3 tfk 206
Abstract: SHINDENGEN DIODE
Text: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings
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S15VT
S15VTA
S15VT60
S15VT80
S15VTA60
S15VTA80
50HziK3Srt,
3 tfk 206
SHINDENGEN DIODE
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EIA-486
Abstract: GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork
Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor
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OD-723
OD-523
OD-323
O-252
OT-23-6
OT-523
OT-323
OT-23
OT-323
EIA-486
GT430PS
Mini size of Discrete semiconductor elements
u6060
GT330NS
voltage regulator e1 sot-363
P5 SOT-563
P22 sot89
GT430NS
Sinyork
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SD965
Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor
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OD-723
OD-523
OD-323
O-252
OT-23-6
OT-523
OT-323
OT-23
OT-323
SD965
J13003
sd965 transistor
j13003 TRANSISTOR
BC846 SOT-23 EBC
J31C Transistor
J31C
J127 mosfet
J42C
SC4242
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode M o d u l» • O U T L IN E DIM ENSIO NS S20VTD/S20VTAD 800V 20A Unit *. mm % DaD £i:A 7 o <|ü p ap[i * j - K J Â ^ ( l l M A X X ^ l . 6 ) r + e % S20VTA type has solid wire lead terminals. (11MA3£X^1.6) ■ RATINGS A bsolu te Maximum R a tin g s
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S20VTD/S20VTAD
S20VTA
11MA3Â
50HzE3Â
50HzIE
110ms
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Untitled
Abstract: No abstract text available
Text: 'E t ir j'y v V ? * * - - K 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S30VTQ/S30VTAD 800V 30A Unit • mm i pap ^ t : A 0 r> < H & l i ' - K J g ^ d lM A X X j il . e ) V t o • S30V T A type has solid wire lead term inals. 11MAXX ^ 1 .6 )
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OCR Scan
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S30VTQ/S30VTAD
11MAXX
S30VT80
S30VTA80
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diode bridge LT 402
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode Module • O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A * ■ ffu%r~Acr>-?<mS,lt' - K « T l l MAXX « . 6 ) T 'to S10VTA type has solid wire lead terminals. (11MAXX j£l .6) R A T IN G S II g Item A b s o lu te Maximum R atin g s
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OCR Scan
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S10VTD/S10VTAD
S10VTA
11MAXX
1QVT60
10VTA60
I0VTA80
diode bridge LT 402
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: 7 'J v ' J Ï ' i * - K $ • 4 i t K — Bridge Diode f v a - A Diode Module o u t l in e d im e n s io n s S50VB 800V 50A « & • S Q I P / ^ ir - ^ •x nu -j'jvv f SM ffl i * •S R Ü S 0 x 7 oy •F A . O J H ■ Ë fè H RATINGS Absolute Maximum Ratings
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S50VB
S50VB60
S50VB80
S50VBD
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode Module • O U T L IN E D IM E N S IO N S S20VTD/S20VTAD 8 0 0 V 2 0 A * , M l : A W 3 < fin o li 'J - K jS -7 - llM A X X «.6 T ' t . ^ S20VTA type has solid wire lead terminals. (11MAXX^1.6) ■ RATINGS A b s o lu te Maximum R atin g s
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OCR Scan
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S20VTD/S20VTAD
S20VTA
11MAXX
S20VT80
S20VTA80
S20VT60
S20VTA60
S20VTl
7S20VTAl
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: ÿ - f i- K ïÿ : l- J U 3 Phase Bridge Diode Diode Module S10VT S10VTA I OUTLINE DIMENSIONS 800V 10A « & •SQip;Ç'>y-y yy •BBEE. SI f km • ^ U X 'S t ë f g g f c lf S V T A 5 "T ^ 0 X T ziy •FA, iR S H yn-ÿ RATINGS • if ê f c i'I I ^ Ï Ë f ë
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OCR Scan
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S10VT
S10VTA
S10VTA60
S10VT80.
S10VTA80
S10VTA«
S10VTD
/S10VTAD
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: l“- K 3 Phase Bridge Diode 71"—K^E5/zl—; U Diode Module • O U T L IN E D IM E N S IO N S S30VTD/S30VTAD 800V 30A * .SigC A W o < >J - K J g + l l M A X X j « 1 . 6 r ' i - o sS? S30VTA type has solid wire lead terminals. (11MAXX ^ 1 ,6) ■ R A T IN G S
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OCR Scan
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S30VTD/S30VTAD
S30VTA
11MAXX
30VT80
30VTA
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water cooled thyristor assembly
Abstract: Ignitron Thyristor 6kV DYNEX PULSED THYRISTOR
Text: p o w er assem blies A ir C o o le d A s s e m b lie s E xam p le ra tin g s 40°C a m b . 3<(>diode bridge. 6Kv devices. Output current 745 A. Each device cooled by 225mm of ED fin. The same assembly forced air cooled at 2.5 m/s has an output current of 1159A.
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225mm
300mm
water cooled thyristor assembly
Ignitron
Thyristor 6kV
DYNEX PULSED THYRISTOR
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Untitled
Abstract: No abstract text available
Text: . Dkxfd-ModyeP?," • ^ ^ . 3 Phase Bridge Diode ■ O U T L IN E DIM ENSIO NS S15VTD/S15VTAD 800V 15A U n it * mm ÏSSpan £ U A < 7 > ^< Ü É & tÎ ' J - K « i { l l M A X X ^ 1 . 6 T 't 0 $8 S15VTA type has solid wire lead terminals. l lMAXXiH.6)
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OCR Scan
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S15VTD/S15VTAD
S15VTA
Rating13of
GGG2S41
4S15VTD/S15VTAD
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Untitled
Abstract: No abstract text available
Text: S Q .I.P .S ! ? 'U y > ^ < 7 |- - K Bridge Diode Square In-line Package • W K rJ-asE I S50VBD O U T L IN E D IM E N S IO N S ii: l. lo—30ASr X, X —fiNIW JSJfrli. 7 r x I- ft. f-<n FlHiJcovX'*- 'J- K«!t t, i±A riftit t m n r < 800V 50A ■ R A T IN G S
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OCR Scan
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S50VBD
30ASrÂ
50HHsine
S50VB80
S50VB60
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Untitled
Abstract: No abstract text available
Text: T J U 'V V S W - K Bridge Diode S Q . I . P . 3 f Square In-line Package O U T L IN E D IM E N S IO N S S50VBD 8 0 0 V a i . io= 30A è M i.r r tw < 7 ^ â -!i, n fó, x h >s - f n r i m K è < i i i ' . n a ifiM itii 'I V & i. l . l i / L £ t t i t i : T » « L T <
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OCR Scan
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S50VBD
S50VB80
S50VB60
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PDF
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half bridge circuit diagram
Abstract: No abstract text available
Text: . DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.2 JULY 2005 LN24089 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated MMC Base with AlN Substrates • 6kV Isolation Voltage • Lead Free Construction
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DIM400PHM17-A000
DS5561-1
LN24089)
DIM400PHM17-A000
1700Vbility
half bridge circuit diagram
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GBJ2510 Yangzhou Yangjie Electronic
Abstract: No abstract text available
Text: GBJ25005 THRU GBJ2510 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 25A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● 6KBJ HOLE FOR NO.
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GBJ25005
GBJ2510
22-Sep-11
21yangjie
GBJ2510 Yangzhou Yangjie Electronic
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Untitled
Abstract: No abstract text available
Text: GBJ15005 THRU GBJ1510 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 15A 6KBJ VRRM 50V~1000V 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● HOLE FOR NO.
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GBJ15005
GBJ1510
22-Sep-11
21yangjie
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Untitled
Abstract: No abstract text available
Text: GBJ6005 THRU GBJ610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● ● 6KBJ HOLE FOR NO.
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GBJ6005
GBJ610
22-Sep-11
21yangjie
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PDF
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GBJ2510 Yangzhou Yangjie Electronic
Abstract: No abstract text available
Text: GBJ35005 THRU GBJ3510 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 35A 6KBJ VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● HOLE FOR NO.
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GBJ35005
GBJ3510
22-Sep-11
21yangjie
GBJ2510 Yangzhou Yangjie Electronic
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Untitled
Abstract: No abstract text available
Text: GBJ8005 THRU GBJ810 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 8A 6KBJ VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● HOLE FOR NO.
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GBJ8005
GBJ810
22-Sep-11
21yangjie
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PDF
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Untitled
Abstract: No abstract text available
Text: GBJ20005 THRU GBJ2010 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 20A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● 6KBJ HOLE FOR NO.
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GBJ20005
GBJ2010
22-Sep-11
21yangjie
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