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    DIODE BOS Search Results

    DIODE BOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode RD2.2S

    Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
    Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ


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    PDF RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD20UJ RD22UJ RD24UJ zener diode RD2.2S RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P

    varactor diode AM

    Abstract: SVC347 En58
    Text: Ordering number : EN5816 Silicon Diffused Junction Type SVC347 Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • Twin type varactor diode for AM electronic tuning use. unit: mm • Miniaturization and high-integration of tuner sets can be


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    PDF EN5816 SVC347 SVC347] varactor diode AM SVC347 En58

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such


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    PDF DK-8381 KLED0002E01

    B-408 diode

    Abstract: MIL-STD-883 method 3015 15kV
    Text: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge


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    PDF CSPESD304 CSPESD304 MIL-STD-883 178mm B-408 diode MIL-STD-883 method 3015 15kV

    smd diode 74a

    Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
    Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation


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    PDF IEC1000-4-2 D11663EJ4V0PF00 smd diode 74a uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915

    TC1617

    Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
    Text: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs


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    PDF TCM1617 TCM1617 TCM1617-1 DS21485A TC1617 TCM1617MQR 200B TCM1617EV TCN75

    200B

    Abstract: TC1068 TC1068MQR TCM1617EV TCN75
    Text: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs


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    PDF TC1068 TC1068 TC1068-1 DS21352A 200B TC1068MQR TCM1617EV TCN75

    bosch voltage suppressor

    Abstract: PFB5022
    Text: PFB5022 THRU PFB5039 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 50A Features 50Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175


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    PDF PFB5022 PFB5039 50Amp PFB5025 100mA WIDTH-300 bosch voltage suppressor PFB5022

    Untitled

    Abstract: No abstract text available
    Text: PFB3522 THRU PFB3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175


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    PDF PFB3522 PFB3539 35Amp PFB3525 100mA WIDTH-300

    Untitled

    Abstract: No abstract text available
    Text: PFBM3522 THRU PFBM3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175


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    PDF PFBM3522 PFBM3539 35Amp PFBM3525 100mA WIDTH-300

    Untitled

    Abstract: No abstract text available
    Text: BOS058 Series Reflective Object Sensor Description The BOS058 reflective object sensor consists of an infrared emitting diode and an NPN silicon phototransistor in an black plastic housing. The unit is suitable for the detection of paper or and object over a range


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    PDF BOS058

    Untitled

    Abstract: No abstract text available
    Text: BD3520, BD3524, BD3536 35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data    


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    PDF BD3520, BD3524, BD3536 200nA BD3520R BD3524R)

    SLD323

    Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


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    PDF SLD323V SLD323V SLD300 600mVV -101C SLD323 808 nm 100 mw SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3

    BOSCH diode

    Abstract: bosch 25 amp diode press-fit diode Diode pressfit 5 amp diode diode, 305 BOSCH 0 2 Diode press-fit
    Text: RENARD MANUFACTURING 47E CO D 7b71057 QOOOlbl DIODES b'ìS H R E N - \ - 19 1/2" Press-Fit Hermetically Sealed Diodes for BOSCH #7990 Pos. 1/2" original Bosch type, press-fit diode, 200 volt, 35 amp, 1 milliamp with long flexible lead #7991 Neg. 1/2" original Bosch type, press-fit diode, 200 volt,


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    PDF 7b71057 BOSCH diode bosch 25 amp diode press-fit diode Diode pressfit 5 amp diode diode, 305 BOSCH 0 2 Diode press-fit

    SLD301V-21

    Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
    Text: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current


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    PDF SLD301V SLD301V SLD301V-21 SLD301 SLD301V-2 SLD301V-3 1R1H

    Untitled

    Abstract: No abstract text available
    Text: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


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    PDF STTA1512P/PI STTA1512P STTA1512PI

    Untitled

    Abstract: No abstract text available
    Text: STTA2512P TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V trr (typ) 60ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


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    PDF STTA2512P

    Untitled

    Abstract: No abstract text available
    Text: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


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    PDF STTA812D/DI/G STTA812DI STTA812D STTA812G

    PO200

    Abstract: SLD302WT SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3 180MW
    Text: SLD302WT SONY 200mW High Power Laser Diode Description Unit: mm Packa g e Outline SLD 302W T is a gain-guided, high-power laser diode with a built-in T E cooler. Fine tuning of the wavelength is possible by controlling the laser chip temperature. F e a tu re s


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    PDF SLD302WT 200mW SLD302WT 180mW PO200 SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3 180MW

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon Switching Diode Array B A V 74 • For high-speed switching • Common cathode Typ e Marking Ordering Code tape and reel B A V 74 JAs Q62702-A693 Pin Configuration Package1* 3 SOT-23 EH-I- K l ° EHA07004 Maximum Ratings per Diode Parameter


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    PDF Q62702-A693 OT-23 EHA07004 23SbD5 BAV74 EH80007! fl235LQ5 Q120404 235LI3S

    TMBYV10-20

    Abstract: diode B05
    Text: {Z T S G S -T H O M S O N * 7#. fflD tg œ iL IM O iO lg i T M B Y V 10-2 0 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode


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    PDF 0-20A 300ms TMBYV10-20 diode B05

    Untitled

    Abstract: No abstract text available
    Text: SLD302B SONY. Block-type 200mW High Power Laser Diode Description Package Outline U nit : mm SLD 302B is a high power laser diode m ounted on a 3 x 3 x 5mm Copper block. It is ideal fo r a pp lica tio ns w h ich require a m inim al distance between the laser fa ce t and


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    PDF 200mW SLD302B --12C

    MPN7380

    Abstract: No abstract text available
    Text: METELICS CORP 25E D bOS13S5 QOGDlbfl b •'T'-07- S PIN DIODE CHIPS HIGH POWER SWITCH & ATTENUATOR metelics CORPORATION FEATURES • High Voltage Breakdown to 800 Volts • Glass Passivation • Low Rs, Cj Mesa Construction MAXIMUM RATINGS Power Dissipation


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    PDF bOS13S5 175oc DAE-100B. MPN-7453C MPN-7453B MPN-7453A MPN--7380 MPN--7330 MPN7380

    Untitled

    Abstract: No abstract text available
    Text: Twin Diode Module TDM150 D im . V Baseplate A=Common Anode ¥ Boseplate Common Cathode -W -o o-W- Baseplate D=Doubler Notes: Baseplate: Nickel plated copper, common cathode Microsemi Catalog Number Working Peak Reverse Voltage Repetitive Peak Reverse Voltage


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    PDF TDM150 TDM15002+ TDM15004* TDM15006Â TDM15008* TDM15010* M15012* 000347T 34flO