1SR35-400A
Abstract: ta7125 marking ROHM
Text: 1SR35-400A Diodes Rectifier diode 1SR35-400A !External dimensions Units : mm !Applications General purpose rectification CATHODE BAND (GREEN) !Features 1) Glass sealed envelope. (GSR) 2) High reliability. φ0.6±0.1 C A 28.0±2 4.3±0.5 28.0±2 Month of manufacture stamped on body in digital marking.
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1SR35-400A
DO-41
1SR35-400A4
1SR35-400A
ta7125
marking ROHM
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF5210
-100V
UF5210
O-220
UF5210L-TA3-T
UF5210G-TA3-T
QW-R502-845
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diode marking code 98
Abstract: ComChip Date code SMD MARKING code ta
Text: Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. 0.041 1.05 0.037(0.95) - ESD Rating of Class 3(>16kV) per Human Body Mode. - Supper low capacitance 0.5 pF Typ.
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0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-750
QW-JP033
0402/SOD-923
diode marking code 98
ComChip Date code
SMD MARKING code ta
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode CPDQ12V0U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) - Low body height: 0.017”(0.43mm) - Low Leakage 0.033(0.85)
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CPDQ12V0U-HF
0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-202
001mgram
QW-JP032
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FDS6990AS
Abstract: FDS6990A A1726
Text: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
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FDS6990AS
FDS6990AS
FDS6990A
A1726
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode CPDQ3V3U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) 0.033(0.85) 0.030(0.75) - Low body height: 0.017”(0.43mm)
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0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-750,
0402/SOD-923
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di 856
Abstract: di+856
Text: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate
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UF624Z
UF624Z
UF624ZL-TN3-T
UF624ZG-TN3-T
UF624ZL-TN3-R
UF624ZG-TN3-R
QW-R502-856
di 856
di+856
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Untitled
Abstract: No abstract text available
Text: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l
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-97337A
IRFH7936PbF
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Untitled
Abstract: No abstract text available
Text: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l
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IRFH7936PbF
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fdpf10n50
Abstract: diode 4A 400v ultra fast FDPF10N50U Ultra Low voltage rds mosfet FDPF10N50UT
Text: FDPF10N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 8 A, 1.05 Features Description • RDS on = 850 m ( Typ.) @ VGS = 10 V, ID = 4 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50UT
FDPF10N50UT
50nsec
200nsec
fdpf10n50
diode 4A 400v ultra fast
FDPF10N50U
Ultra Low voltage rds mosfet
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4n65
Abstract: mosfet 4n65
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N65-U
4N65-U
O-220F1
QW-R502-A71
4n65
mosfet 4n65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
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500v 5a ultra fast recovery diode
Abstract: mosfet TEST
Text: FDPF5N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 4.5 A, 1.55 Features Description • RDS on = 1.25 (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF5N50FT
FDPF5N50FT
100nsec
200nsec
500v 5a ultra fast recovery diode
mosfet TEST
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Untitled
Abstract: No abstract text available
Text: PD - 97559 IRFH9310PbF HEXFET Power MOSFET VDS -30 RDS on max V S S 6 mm mΩ nC RG (typical) 110 2.8 ID -21 A (@VGS = 10V) Qg (typical) (@TA = 25°C) D S D 5 mm 4.6 G D Ω D PQFN 5mm x 6mm Applications • Charge and Discharge Switch for Notebook PC Battery Application
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IRFH9310PbF
IRFH9310TRPBF
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dg1u
Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Text: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)
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ZB2-BW008)
AC-15
DC-13
XD2-PA22
XD2-PA14
XD2-PA24
40x30
dg1u
XD2PA22
XD2PA24
XD2PA12
XD2PA14
ZB2BV6
D1L20
xb2bs8445
ZB2BY4101
xd2pa
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FDL100N50F
Abstract: FDL100N50 fdl100n
Text: FDL100N50F N-Channel UniFETTM FRFET MOSFET 500 V, 100 A, 55 m Features Description • RDS on = 43 m (Typ.) @ VGS = 10 V, ID = 50 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDL100N50F
FDL100N50F
100nsec
200nsec
FDL100N50
fdl100n
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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FDP053N08B
Abstract: No abstract text available
Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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52N20
Abstract: fdb fairchild FDB52N20
Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB52N20
FDB52N20
FDB52N20TM
52N20
fdb fairchild
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP24N40
FDP24N40
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1S721
Abstract: FDP040N06
Text: FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP040N06
FDP040N06
O-220
1S721
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Untitled
Abstract: No abstract text available
Text: FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDI040N06
FDI040N06
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB66N15
FDB66N15
FDB66N15TM
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