R1560P2
Abstract: No abstract text available
Text: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R1560P2
ISL9R1560P2
R1560P2
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FF300R12KE4
Abstract: No abstract text available
Text: Technische Information / technical information FF300R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter
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FF300R12KE4
FF300R12KE4
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BJE 80 diode
Abstract: DIODE BJE DIODE BJE deutsch BJE deutsch DIODE BJE smd CLC420 CLC420ALC CLC420AMC DIODE BJE 80
Text: N Comlinear CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/µs slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,
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CLC420
300MHz
-60dBc
20MHz
CLC420B:
CLC420AJP/BJP
CLC420AJE/BJE
CLC420ALC
CLC420AMC
BJE 80 diode
DIODE BJE
DIODE BJE deutsch
BJE deutsch
DIODE BJE smd
CLC420
CLC420ALC
CLC420AMC
DIODE BJE 80
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DIODE BJE deutsch
Abstract: smd transistor AJp 65 BJE deutsch CLC420 CLC420ALC CLC420AMC DIODE BJE 80
Text: N CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/µs slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,
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CLC420
300MHz
-60dBc
20MHz
CLC420B:
CLC420AJP/BJP
CLC420AJE/BJE
CLC420ALC
CLC420AMC
DIODE BJE deutsch
smd transistor AJp 65
BJE deutsch
CLC420
CLC420ALC
CLC420AMC
DIODE BJE 80
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DIODE BJE smd
Abstract: DIODE BJE deutsch BJE deutsch CLC420 CLC420ALC CLC420AMC smd transistor 1kw smd transistor AJp 65
Text: N CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/ms slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,
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CLC420
300MHz
100V/ms
-60dBc
20MHz
CLC420B:
CLC420AJP/BJP
CLC420AJE/BJE
CLC420ALC
DIODE BJE smd
DIODE BJE deutsch
BJE deutsch
CLC420
CLC420ALC
CLC420AMC
smd transistor 1kw
smd transistor AJp 65
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bfm 2 TERMINAL DIODE
Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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GEK DIODES
Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
GEK DIODES
Diode GFK
Diode BFX 514
GEZ DIODES
BDP 282
DIODE BFM
DIODE BFT marking code
GGP DIODE
MARKING GEK
GFX DIODE
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Diode GFK
Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
Diode GFK
GFX DIODE
BJE 80 diode
Diode BFM
bfm 2 TERMINAL DIODE
GGT DIODE
Diode GEG
Diode GFK 42
bem diode
GEZ DIODES
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marking code BFK
Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
marking code BFK
GFX DIODE
Diode GFK
DIODE BJE
gfp 35
GFM 78
GGT DIODE ON
on 440 gex diode
BFR 30 transistor
GFK 77
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Untitled
Abstract: No abstract text available
Text: @ . OPTEK Product Bulletin OPB712 June 1996 Reflective Object Sensor Type OPB712 Features Absolute Maximum R atings Ta = 25° C unless otherwise noted • Photodarlington output • Unfocused for sensing diffuse surface • Low cost plastic housing Storage and Operating Temperature. -40° C to +85° C
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OPB712
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2SK2651-01MR
Abstract: No abstract text available
Text: F U JI 2SK2651-01MR SUJM FAP-IIS Series s l TL^U G N-channel MOS-FET 900V 2,5 0 . 6A 50W Min. Typ. Max. Unit V V PA mA > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V G uarantee Repetitive A valanche Rated
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2SK2651-01MR
0004b77
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80NE06-10
Abstract: No abstract text available
Text: STW80NE06-10 N - CHANNEL 60V - 0.0085Ü - 80A - TO-247 STripFET ” POWER MOSFET TYPE STW 80NE06-1 0 • . . . V dss 60 V R d Id S o ii <0.01 Q. 80 A TYPICAL RDS(on) = 0.0085 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STW80NE06-10
O-247
80NE06-1
80NE06-10
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Untitled
Abstract: No abstract text available
Text: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control
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2SK2691-01R
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gunn diode radar module
Abstract: Gunn Diode e band
Text: MITEL AC2001 Millimeter Wave gunn Oscillator Module S E M IC O N D U C T O R DS5074 Issue 2.0 March 1999 Features • • • • High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications • • •
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AC2001
DS5074
gunn diode radar module
Gunn Diode e band
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.
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MG25Q2YS91
PW038Â
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON L2726 M c M IlJ Û T O iO ( g S LOW DROP DUAL POW ER OPERATIO NAL AM PLIFIER AD VANC E DATA • ■ ■ ■ ■ ■ ■ ■ ■ OUTPUT CURRENT TO 1A OPERATES AT LOW VOLTAGES SINGLE OR SPLIT SUPPLY LARGE CO M M ON-MODE AND DIFFERENTIAL MODE RANGE
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L2726
SO-20
L2726
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Untitled
Abstract: No abstract text available
Text: TOSHIBA C2MOS Logic TC74LVX74F/FN/FS Dual D - Type Flip Flop With Preset and Clear •me TC74LVX74 is a high speed CMOS D-FLIP FLOP fabri cated with silicon gate iMOS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS low power dis
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TC74LVX74F/FN/FS
TC74LVX74
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)
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MG100Q2YS11
PW03890796
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3PHA 20
Abstract: 3pha diode EM- 546 motor PM6B 3PHA 3pha+diode
Text: MOTOROLA Order this document by MHPM6B20E60D3/D SEMICONDUCTOR TECHNICAL DATA Advance Information MH PM6B20E60D3 Hybrid Power Module Integrated Power Stage for 230 VAC Motor Drives M o to r o la P r e fe r r e d D e v ic e This VersaPower module integrates a 3 -p h a se inverter and
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MHPM6B20E60D3/D
3PHA 20
3pha diode
EM- 546 motor
PM6B
3PHA
3pha+diode
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m£2 - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60N S04Z V R d S o ii Id <0.015 Q. 60 A dss CLAM PED . TYPICAL Ros(on) =0.010 Î2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP60NS04Z
O-220
STP60N
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RXKN1
Abstract: rxtda 1 RK 315 L 333-AX electromagnetic 110 v dc relay
Text: ,1 I ASEA ^ k fc fe c t V - f l ' Z i } f £/c j / ' / ^ c Catalogue RK 31-12 E Editibn 2 Time-lag relay type RXKN 1 i¿ ; -j r • Specially designed for protective relays, automatic equipment or industrial use » Time.-laj on pick-up scales: 50-500 ms, 0 .2 -2 s and 1 -1 0 s
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133-AD
133-AH
133-AS
233-AN
233-AX
RXKN1
rxtda 1
RK 315 L
333-AX
electromagnetic 110 v dc relay
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MG100Q2YS11
Abstract: 2-109B4A MG100Q2YS1
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT S S High Power Switching Applications 4 - FAST-ON -TAB + 1 1 0 Motor Control Applications Features • H igh input im p e d a n c e • H igh s p e e d : t f = 1 .Ons M a x .
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MG100Q2YS11
D0220n
PW03890796
MG100Q2YS11
2-109B4A
MG100Q2YS1
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BJE 80 diode
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHPM7A15S120DC3/D SEMICONDUCTOR TECHNICAL DATA Advance Information M HPM 7A15S120DC3 Hybrid Pow er Module Integrated Power Stage for 3.0 hp 460 VAC Motor Drive Motorola Preferred Device This VersaPower module integrates a 3 -p h a se inverter, 3 -p h a se
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MHPM7A15S120DC3/D
BJE 80 diode
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MG50Q2YS91
Abstract: 9t2 transistor ic 7800 MG50Q2YS9 PW03840796
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1 .O^is Max. V = 0.5ns (Max.)
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MG50Q2YS91
PW03840796
MG50Q2YS91
9t2 transistor
ic 7800
MG50Q2YS9
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