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    DIODE BAY 68 Search Results

    DIODE BAY 68 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAY 68 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power supply IRF830 APPLICATION

    Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
    Text: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all


    Original     		PDF IRF830 O-220 power supply IRF830 APPLICATION IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45

    B2515

    Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
    Text: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The


    Original     		PDF B2520/B2515 B2520 B2515 120dB B2520 B2500 B2515 ultra FAST DMOS FET Switches B2520K4

    ultra FAST DMOS FET Switches

    Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
    Text: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless


    Original     		PDF B3520/B3540 B3520 CT3520 ultra FAST DMOS FET Switches 60659 B3520K4 B3540 B3540K4-XX CT-3520

    TCA4401

    Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
    Text: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,


    Original     		PDF

    TAA761A

    Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
    Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,


    Original     		PDF LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238

    WATKINS JOHNSON mixer

    Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
    Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single


    Original     		PDF

    schematic diagram inverter 12v to 24v 30a

    Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
    Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the


    Original     		PDF 2364E 2364F 2364P 2364P-5 schematic diagram inverter 12v to 24v 30a inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336

    HVC376B

    Abstract: No abstract text available
    Text: HVC376B Variable Capacitance Diode for VCO REJ03G0091-0100Z Previous: ADE-208-687 Rev.1.00 Sep.17.2003 Features • High capacitance ratio (n = 4.3min) and good C-V linearity. • High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max)


    Original     		PDF HVC376B REJ03G0091-0100Z ADE-208-687) HVC376B

    PCS5035

    Abstract: No abstract text available
    Text: Standard Products PCS5035 Quintet Precision Current Source Radiation Tolerant www.aeroflex.com/power PRELIMINARY February 13, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s


    Original     		PDF PCS5035 no-9229 SCD5035

    scsi cable adapter

    Abstract: ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569
    Text: RS/6000 Enterprise Server Model F80 IBM Installation Guide SA38-0569-01 Second Edition June 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page vii, Appendix B, “Environmental Notices” on page 101, and Appendix C,


    Original     		PDF RS/6000 SA38-0569-01 H6DS-9561 09P1324 9P1324 scsi cable adapter ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569

    2SK3154

    Abstract: 2SK3154-E PRSS0004AC-A
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 Previous: ADE-208-682A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3154 REJ03G1079-0300 ADE-208-682A) PRSS0004AC-A O-220AB) 2SK3154 2SK3154-E PRSS0004AC-A

    2SK3140

    Abstract: 2SK3156 2SK3156-E PRSS0004AC-A
    Text: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0300 Previous: ADE-208-683A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3156 REJ03G1081-0300 ADE-208-683A) PRSS0004AC-A O-220AB) 2SK3140 2SK3140 2SK3156 2SK3156-E PRSS0004AC-A

    2SK3142

    Abstract: 2SK3142-E PRSS0003AE-A
    Text: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching REJ03G1071-0300 Previous: ADE-208-681A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3142 REJ03G1071-0300 ADE-208-681A) PRSS0003AE-A O-220C 2SK3142 2SK3142-E PRSS0003AE-A

    2SK3156

    Abstract: 2SK3156-E PRSS0004AC-A
    Text: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 Previous: ADE-208-683A Rev.3.01 Apr 27, 2006 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3156 REJ03G1081-0301 ADE-208-683A) PRSS0004AC-A O-220AB) 2SK3156 2SK3156-E PRSS0004AC-A

    Untitled

    Abstract: No abstract text available
    Text: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/pcs September 12, 2012 FEATURES ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s - ELDRS > 15 krads (Si), Dose rate = .01 rads(Si)/s


    Original     		PDF PCS5035 Radiation85 SCD5035

    Diode BAY 54

    Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
    Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight


    OCR Scan     		PDF

    Diode BAY 54

    Abstract: 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
    Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T-OZ-0°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110 « / Cathoda \ [| - 11-


    OCR Scan     		PDF r-03-Ã Q0GT74? T-03-09 Ij-100Â Diode BAY 54 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69

    BAY 80 diode

    Abstract: Diode BAY 54 Diode BAY 55 BAY69 BAY 69 Diode BAY 80
    Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T - O Z - 0 ° l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110« Cathoda /«<1.6 g<Q55


    OCR Scan     		PDF

    Diode BAY 68

    Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
    Text: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880


    OCR Scan     		PDF rLS25Â T-03-09 ODOT747 Diode BAY 68 diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY marking 69

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49

    Diode BAY 61

    Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
    Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12


    OCR Scan     		PDF 3AX11/IO 3AX11/IU 11/ilo 3AX11/IÃ 3AX11 BAX11 79/III 79/IV 26/II Diode BAY 61 Diode BAY 55 Diode BAY 80 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82