FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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semikron SKN 71
Abstract: diode 5d9 5d-9 RECTIFIER DIODE gleichrichter
Text: SKN 71 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! ! ! 7 : . 5 ; /
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,
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DD600S17K3
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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MHC310
Abstract: MHC-310 ua720 SMD MARKING E1 BAT960 EIAJ C-3 marking code b9 MHC311
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability
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M3D744
BAT960
SCA75
613514/02/pp8
MHC310
MHC-310
ua720
SMD MARKING E1
BAT960
EIAJ C-3
marking code b9
MHC311
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SMD MARKING E1
Abstract: BAT960
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability PIN DESCRIPTION • Very low forward voltage
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M3D744
BAT960
MHC31mail
SCA74
613514/01/pp8
SMD MARKING E1
BAT960
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N464
Abstract: IHW15N120R3 50gk j127
Text: IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW15N120R3
J-STD-020
JESD-022
N464
IHW15N120R3
50gk
j127
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IHW20N120R3
Abstract: J127 9127 diode
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
J127
9127 diode
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IHW15N120R3
Abstract: J127 50gk N464 w393
Text: IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW15N120R3
J-STD-020
JESD-022
IHW15N120R3
J127
50gk
N464
w393
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IHW20N120R3
Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
j127
H63-1
9P127
E393
h631
wg 2 fk
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IHY15N120R3
Abstract: K127
Text: IHY15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHY15N120R3
O247HC
J-STD-020
JESD-022
IHY15N120R3
K127
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION
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M3D744
BAT960
613514/02/pp7
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BAT960
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION
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M3D744
BAT960
613514/02/pp7
BAT960
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Untitled
Abstract: No abstract text available
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
60-cycle
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KDI attenuator
Abstract: GT-0206 MICRO-D CONNECTORS strobe trigger GT attenuator voltage controlled
Text: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0206 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques
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GT-0206
KDI attenuator
MICRO-D CONNECTORS
strobe trigger
GT attenuator voltage controlled
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marking code 153 DIODE sod 23
Abstract: diode ZENER A8 zener diode n8 X8 diode zener X8 zener ZENER diode Y8 BZT52C2V0K ZENER MARKING C8
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
soldering60
marking code 153 DIODE sod 23
diode ZENER A8
zener diode n8
X8 diode zener
X8 zener
ZENER diode Y8
ZENER MARKING C8
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GT attenuator voltage controlled
Abstract: micro-d connectors GT061832 GT attenuator GT-0618 KDI attenuator 3210f
Text: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0618 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques
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GT-0618
GT attenuator voltage controlled
micro-d connectors
GT061832
GT attenuator
KDI attenuator
3210f
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diode V6 57
Abstract: No abstract text available
Text: SKN 60F THYRISTOR BRIDGE,SCR,BRIDGE Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>-9 @$A BC &=- BD $EFG &=+-) 1+ 91>-H $EIG
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C7S56
Q577R
diode V6 57
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is
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DD30HB/KD30HB
E76102
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD30GB/KD30GB UL!E76102 M Power Diode Module D D 30 G B series are designed for various rectifier circuits. D D 30 G B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800 V is
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DD30GB/KD30GB
E76102
DD30GB-40
D0022SS
000225b
DD30GB
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germanium rectifier
Abstract: AAY34 K1007
Text: MICROWAVE MIXER DIODE AAY34 Subm iniature germ anium point-contact m ix e r diode for u se at Q band. QUICK REFERENCE DATA Frequency range 26 to 40 T yp. noise figure GHz 8 .5 dB OUTLINE AND DIMENSIONS X M illim etres B9924 Min. Max. A 6 .6 5 7 .1 6 B 1 .1 7
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AAY34
B9924
AAY34
86GHz
K1007
45MHz.
germanium rectifier
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