B80C
Abstract: bare diode bookham diode
Text: Data sheet 80W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 80W operating power B80C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham Technology B80C-9xx-01 bare laser diode bar series has been designed to provide the
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B80C-9xx-01
B80C-9xx-01
915nm,
940nmllustrative
21CFR
B80C
bare diode
bookham diode
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SANYO DC 303
Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
Text: Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.
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EN4657
FP303
FP303
2SD1623
SB05-05CP,
FP303]
SANYO DC 303
SB05-05CP
MARKING 303
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one
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EN4658
FC601
FC601
SB007-03CP
RA104C
FC601]
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FC601
Abstract: RA104C marking 601 SB007-03CP sanyo fc601
Text: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one
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EN4658
FC601
FC601
SB007-03CP
RA104C
FC601]
RA104C
marking 601
sanyo fc601
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Q62702-B802
Abstract: BB835
Text: BB 835 Silicon Tuning Diode Preliminary data Features ● Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units ● High capacitance ratio Type BB 835 Marking yellow X Ordering Code tape and reel Q62702-B802 Pin Configuration
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Q62702-B802
OD-323
CT1/CT28
Q62702-B802
BB835
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DECT transmitter siemens
Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Text: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the
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24dBm
3-10mA
DECT transmitter siemens
pindiode switch
L234N
A03 SMD
microwave transistor siemens
BAR63
BAR63-03W
BAR80
SIMID02
ms32 equivalent
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1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
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D400 transistor
Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state
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1600MHz:
D400 transistor
sod343
transistor D400
microwave antenna 1500 MHz
Schaffer
transistors D400
AN025
D400R
TR400
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sod343
Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state
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1600MHz:
sod343
diode V6 96
Lambda Semiconductors
D400 transistor
BAR63
BAR63-03W
BAR80
BCR400
BCR400W
D400
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1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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11-Mar-11
1KAB60E
1KAB80E
B125C1000
B250C1000
B40C1000
B80C1000
1KAB100E
1KAB10E
1KAB20E
1KAB40E
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2SD1623
Abstract: FP303 ITR11096 SB05-05CP
Text: Ordering number:ENN4657 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP303 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP303] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky
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ENN4657
FP303
FP303]
25max
FP303
2SD1623
SB05-05CP,
ITR11096
SB05-05CP
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B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000trademarks
2011/65/EU
B500C1000
1KAB20
1KAB60
1kab40
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1KAB60
Abstract: 1kab20e
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000hay
11-Mar-11
1KAB60
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b20c1500
Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Text: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four
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E2733
2KBB05
2KBB10
2KBB20
b20c1500
2KBB20R
B250C1500 1000
b380c1500
B250C1500
2kbb10r
B80C1500
2KBB20
2KBB100R
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.
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FP303
2SD1623
SB05-05CP,
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FC601
Abstract: No abstract text available
Text: Ordering num ber:EN4658 FC601 No.4658 TR : PN P E pitaxial P lanar Silicon T ransistor SBD : Schottky B arrier Diode 1 SAÊÊYO DC/CD Converter Applications F e a tu r e s • Composed of a Schottky b a rrier diode and a PN P transistor with built-in resistors, and contained in
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EN4658
FC601
FC601
SB007-03CP
RA104C
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Untitled
Abstract: No abstract text available
Text: O rd e rin g num ber: EN 4657 FP303 No.4657 s a TR : N PN E pitaxial P lan ar Silicon T ransisto r SBD : Schottky B arrier Diode t Y O DC-DC Converter Applications F e a tu re s • Com posite type w ith N PN tran sisto r and Schottky b a rrier diode facilitates high-density m ounting.
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FP303
FP303
2SD1623
SB05-05CP,
470/iF
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835 431
Abstract: No abstract text available
Text: SIEMENS Silicon Tuning Diode BB 835 Preliminary data Features • Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code tape and reel BB 835 yellow X Q62702-B802 Pin Configuration
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Q62702-B802
OD-323
835 431
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Tuning Diode BB 835 Preliminary data Features • Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units • High capacitance ratio Type BB 835 Marking yellow X Ordering Code tape and reel Q62702-B802 Pin Configuration
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Q62702-B802
OD-323
fiS35bD5
D12D47T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 835 Silicon Tuning Diode Preliminary data Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio 2 5:1 Type BB 835 Marking yellow X Ordering Code tape and reel 1 Q62702-B802 C Pin Configuration
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Q62702-B802
OD-323
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BA 204-115
Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
Text: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode
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B125C
B250C
10/is)
BA 204-115
BA 204115
B80C
bf 204 115
110BHZ
B20C 500
B80C 300
b80c 400
B250C1500B
B80C-3200/2200
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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e62320
Abstract: E 62320 26MT120A 36MB80B E.62320 26MB10B 36MB60B 36MB40B 6m 950 36MB100B
Text: Power Modules International iö r !R e c tifie r Single Phase Diode Bridges 10-35 Amps Part Number U.S. Series 'O TC VFM @ If 4 Vr r m 00 100JB05L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L 100JB10L 100JB12L 50 100 200 400 600 800 1000 1200 2 6 M B 05A 26M B10A
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100JB05L
100JB1L
100JB2L
100JB4L
100JB6L
100JB8L
100JB10L
100JB12L
26MB1
B120A
e62320
E 62320
26MT120A
36MB80B
E.62320
26MB10B
36MB60B
36MB40B
6m 950
36MB100B
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