sod323 diode marking code 2E
Abstract: V2E MARKING DIODE sod323 diode marking code AC DIODE B74 DIODE marking code B74 BB134 diode code B74 UHF diode BB135 UHF variable capacitance diode
Text: Philips Semiconductors_ b b 5 3 ^ 3 1 Q0Sb3^b 73fl W A P X Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE bTE T> Q UICK REFERENCE DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar
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BB134
BB134
OD323.
BB135,
sod323 diode marking code 2E
V2E MARKING DIODE
sod323 diode marking code AC
DIODE B74
DIODE marking code B74
diode code B74
UHF diode
BB135
UHF variable capacitance diode
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1g3gt
Abstract: 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric
Text: iiMiAA K "m 1G3-GT <SmElBCTROñUCS r vT302° 1G3-GT diode Pa912-61 e1 DESCRIPTION A N D R A T I N G = = FOR TV HIGH-VOLTAGE-RECTIFIER APPLICATIONS The 1G3-GT is a filam entary diode designed for use in high-voltage low-current rectifier applications. It is especially
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B5-82,
B5-85,
B6-60,
B7-47,
1g3gt
1g3-gt
general electric DIODE RECTIFIER
P2T2
B-660
Scans-0017340
general electric
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P 131 GB
Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Text: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode
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315CTV713)
B7-40
P 131 GB
skiip 632 gb 120
315CTV713
skiip gb 120
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C
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613bb71
QQ05Q01
0GQ50G3
00G5D04
SKiiP 613 GB
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41
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613bb71
QQ05Q01
0GQ50G3
00G5D04
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PDF
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skiip gb 120
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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SANSHA
Abstract: diode b73 SDF4000AA20 SDF4000AA40 SDF4000AA60 diode vrrm 7000 if 7000
Text: SANSHA ELECTRIC MFG CO 5bE D 7*^1243 00GG4S7 4T7 • S E M J DISC T Y P E DIODE SDF4000AA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, V = 600V rrm • High Reliability by pressure mount construction. (Applications)
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SDF4000AA
00GG4S7
SDF4000AA
SDF4000AA20
SDF4000AA40
SDF4000AA60
SANSHA
diode b73
SDF4000AA60
diode vrrm 7000 if 7000
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senju m705 solder wire
Abstract: Solder bar of Senju M705 senju M705 solder paste senju 533 solder paste spec Senju M705 solder bar GM4BW53340A PL80 senju solder bar C0806 senju m705 silver less solder wire 0.5 mm
Text: - _ _ • SPEC. No. S H A R P ISSU E May- ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4BW53340A CUSTOMERS' APPROVAL PRESENTED Date _ Date M rt, y m :_ f j ; 2&d~7
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GM4BW53340A
senju m705 solder wire
Solder bar of Senju M705
senju M705 solder paste
senju 533 solder paste spec
Senju M705 solder bar
GM4BW53340A
PL80
senju solder bar
C0806
senju m705 silver less solder wire 0.5 mm
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b745 diode
Abstract: B745 MOTOROLA b745 "Power Diode" I/b745 diode all silicon metal rectifier diode product List Silicon Controlled Rectifier 50 amp single phase fully controlled rectifier 221E AN1040
Text: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF745 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
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Original
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MBRF745/D
MBRF745
b745 diode
B745 MOTOROLA
b745
"Power Diode"
I/b745 diode
all silicon metal rectifier diode product List
Silicon Controlled Rectifier 50 amp
single phase fully controlled rectifier
221E
AN1040
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DIODE B74
Abstract: opto 1010
Text: OPTO DIODE CORP SSE D • bflDma GGDDIST Tib ■ OPD "T ~ - V /- f j OD-8OOPP HI-REL RAD HARD IR EMITTERS FEATURES • High radiation tolerance • Super high reliability • High power output • Fast response • Hermetically sealed minature pill package
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MIL-S-19500
810nm
DIODE B74
opto 1010
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Untitled
Abstract: No abstract text available
Text: O K I electronic components 0 LP226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emission micro-diode sealed with collimator lens in a TO-18 metal can package. High uniform ity of light distribusion and collimator lens enable
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LP226
OLD226
b724240
OLD222H
OLD226
7E4E40
2048C
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B748
Abstract: No abstract text available
Text: SEMIKRON V SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 192 GH 170 + Driver 272 CTV 713 A °C Case S2 SKiiP 192 GH 170 - 272 CTV Absolute Maximum Ratings Symbol Values |Conditions11 Units IGBT & Inverse Diode Vces V cc , 91 lc T j 3’
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B7-48
B748
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B745 MOTOROLA
Abstract: b745 diode b745 motorola an1040 RECTIFIER DIODES Motorola
Text: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r MBRF745 The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features
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MBRF745/D
B745 MOTOROLA
b745 diode
b745
motorola an1040
RECTIFIER DIODES Motorola
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
SKiiP 613 GB
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mitsubishi diode relay
Abstract: TC 2C PD 6V relay 251C M54539P
Text: I bSMIBE? DD1SD3D ATI • MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54539P MITSUBISHI ÍGTL LOGIC 6-UNIT 700mA TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54539P, 6 -c h a n n e l sink driver, consists of 12 N P N tran
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M54539P
700mA
M54539P,
700mA
M54539P
b24R6S7
DQ1SQ32
mitsubishi diode relay
TC 2C PD 6V relay
251C
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SKiiP 613 GB
Abstract: No abstract text available
Text: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode
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GGD5D51
613bb71
QQ05Q01
0GQ50G3
SKiiP 613 GB
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PDF
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Untitled
Abstract: No abstract text available
Text: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C
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13bb71
D0D5D27
613bb71
QQ05Q01
ai3bb71
613bb71
0GQ50G3
00G5D04
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PDF
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Untitled
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
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PDF
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skiip gb 120
Abstract: No abstract text available
Text: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces
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613bb71
QQ05Q01
0GQ50G3
skiip gb 120
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skiip gb 120
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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PDF
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SKIIP 602 GB 120 301 FT
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
SKIIP 602 GB 120 301 FT
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Untitled
Abstract: No abstract text available
Text: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces
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fll3bb71
0Q05G55
613bb71
QQ05Q01
0GQ50G3
00G5D04
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PDF
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semikron skiip 1212 GB 120
Abstract: No abstract text available
Text: s e M IK R O n SKiiP 1212 GB 120 - 402 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 1200 2400 - 5 5 . . . + 150 3000 5 990 2400 8600 374 V V A A °C V A A A kA2s 18 30 75 - 25 0 ) . .+ 85(70) V V kV/|is °C | Conditions1> IGBT & Inve rse Diode
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613bb71
QQ05Q01
0GQ50G3
semikron skiip 1212 GB 120
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)
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613bb71
QQ05Q01
0GQ50G3
SKiiP 613 GB
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