b631 transistor
Abstract: S3 marking DIODE b631 Q62702-B631
Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23
|
Original
|
PDF
|
Q62702-B631
OT-23
Jan-09-1997
b631 transistor
S3 marking DIODE
b631
Q62702-B631
|
C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
|
Original
|
PDF
|
FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
|
BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
PDF
|
MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
|
77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C 36"#$ 6%1C3B 1322 14BBFB &' 6 6*+
|
Original
|
PDF
|
DDB6U75N16YR
14BBFB
06123B
F223B
6043C0F0613265C
3269F
6123B
043C0F06
06123B
|
TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
|
Original
|
PDF
|
TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
|
b639
Abstract: No abstract text available
Text: BB639WS SILICON VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Low series resistance • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure PINNING DESCRIPTION PIN 1 Cathode 2 Anode
|
Original
|
PDF
|
BB639WS
OD-323
B639WS
OD-323
b639
|
marking code, t2
Abstract: BB639WS diode code T2 marking code T2
Text: BB639WS SILICON VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Low series resistance • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure PINNING DESCRIPTION PIN 1 Cathode 2 Anode
|
Original
|
PDF
|
BB639WS
OD-323
B639WS
OD-323
marking code, t2
BB639WS
diode code T2
marking code T2
|
FR4 substrate antenna
Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
Text: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,
|
Original
|
PDF
|
SCD80
OT343
BAR63
BAR81W
150pF
89GHz
FR4 substrate antenna
BAR63-02W
BAR63
BAR81W
siemens diodes
DECT siemens
140FF
|
DECT transmitter siemens
Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Text: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the
|
Original
|
PDF
|
24dBm
3-10mA
DECT transmitter siemens
pindiode switch
L234N
A03 SMD
microwave transistor siemens
BAR63
BAR63-03W
BAR80
SIMID02
ms32 equivalent
|
ABB B63
Abstract: MAX3204EETT MAX3206E
Text: 19-2739; Rev 2; 11/04 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to
|
Original
|
PDF
|
MAX3202E/MAX3203E/MAX3204E/MAX3206E
MAX3202E
MAX3204EETT
MAX3204EETT-T
MAX3204EETT
MAX3204EEBT+
MAX3204EEBT
21-0097G
ABB B63
MAX3206E
|
6-TDFN-EP
Abstract: W41A1 W41A MAX3204EETT MAX3206E MAX3208E
Text: 19-2739; Rev 3; 12/07 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces Features The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to
|
Original
|
PDF
|
MAX3202E/MAX3203E/MAX3204E/MAX3206E
MAX3202E
MAX3202E/MAX3203E/MAX3204E/MAX3206E
3202EEWS
6-TDFN-EP
W41A1
W41A
MAX3204EETT
MAX3206E
MAX3208E
|
W41A
Abstract: ABB B63 MAX3204EETT MAX3206E UCSP MAX3202E MAX3202EEBS-T MAX3208E MAX3203E MAX3203EETT-T
Text: 19-2739; Rev 3; 12/07 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces Features The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to
|
Original
|
PDF
|
MAX3202E/MAX3203E/MAX3204E/MAX3206E
15kV--Human
3202EEWS
W41A
ABB B63
MAX3204EETT
MAX3206E
UCSP
MAX3202E
MAX3202EEBS-T
MAX3208E
MAX3203E
MAX3203EETT-T
|
D400 transistor
Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Text: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state
|
Original
|
PDF
|
1600MHz:
D400 transistor
sod343
transistor D400
microwave antenna 1500 MHz
Schaffer
transistors D400
AN025
D400R
TR400
|
|
|
ns102
Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Text: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980
|
Original
|
PDF
|
HFZ-307)
ns102
D635-15
Samsung SD650-5 650nm 5mw, 9MM
knight rider
NS102A
SD650-5 650nm 5mw, 9MM
650NM laser diode 5mw
NM808-30
sniper
EPM650-5
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type
|
OCR Scan
|
PDF
|
BBY51
Q62702-B631
OT-23
fl235bOS
23Sb05
|
rs 434 065
Abstract: 434 diode
Text: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type
|
OCR Scan
|
PDF
|
Q62702-B631
OT-23
rs 434 065
434 diode
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2
|
OCR Scan
|
PDF
|
Q62702-B632
OT-23
H35bDS
02BSbOS
BBY52
aE35b05
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BBY52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • D esigned for low tuning voltage operation • For V C O 's in mobile com m unications equipment Type Marking Ordering Code Pin Configuration BBY52 S 5s Q62702-B632 1 =A1 Package
|
OCR Scan
|
PDF
|
BBY52
Q62702-B632
|
Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO SbE I> • 7 ^ 1 2 4 3 0D00447 SS3 ■ S E M J DIODE MODULE DW F R 50A D W F(R )50A is a non-isolated diode module designed for 3 phase rectification. • • • • If(av) = 50A, VrrM= 400V Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type.
|
OCR Scan
|
PDF
|
0D00447
50A30
50A40
|
AN8523S
Abstract: diode b63 AN8523 0000B ecl prescaler sip
Text: Bipolar Digital ICs • Driver Arrays Function Type No. Input Resistor 0 Output Breakdown Voltage VcE(SUS) Output Current (mA) Output Clamp Diode 500 1.5A 1.5A No Yes No Numbers of Circuits Package No. (V) DN8690 " input active driver (Emitter common) LSTFL Compatible
|
OCR Scan
|
PDF
|
DN8650
DN8690
DN8695
DIP016-P-0300D
HZIP023-P-0138
DN6844S
DN6845S
DN6846S
DN6847/S
AN8523S
diode b63
AN8523
0000B
ecl prescaler sip
|
diode b63
Abstract: m 50160 "Power Diode" 6RI50E R605A fuji r605a
Text: 6-Pack Diode 600/800 V 50 A FUJI POWER DIODE MODULE O u tlin e D ra w in g s Features A ll th e te rm in a ls an d th e m o u n tin g p la te a re e le c tric a lly is o la te d . T h e s e m o d u le s can b e in s ta lle d in th e s a m e c o o lin g fin as o th e r m o d u le s , th u s sa v in g in s ta lla tio n
|
OCR Scan
|
PDF
|
R605A
6RI50E-060/080
60TA0V
00D5bl5
diode b63
m 50160
"Power Diode"
6RI50E
R605A
fuji r605a
|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
|
OCR Scan
|
PDF
|
|
LT 220 diode
Abstract: No abstract text available
Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1
|
OCR Scan
|
PDF
|
220-12io1
220-14io1
220-16io1
4bflb22b
LT 220 diode
|
