FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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diode rj 93
Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
Text: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHD06N60RA
diode rj 93
IHD06N60RA
B127
9C13
Z8B00003328
bk 36
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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laser diode lg
Abstract: transmitter tube 807 LG1625AXF TF1006A
Text: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide {GaAs laser diode driver to be used with direct modulated laser
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LG1625AXF
DS99-187HSPL
U7732
laser diode lg
transmitter tube 807
TF1006A
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser
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OCR Scan
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LG1625AXF
DS99-187HSPL
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current
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bb53c
00Ebl41
BA221
DO-35
bb53T31
QD2bl44
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DIODE GE
Abstract: SDB310WKU D SCHOT MARKIN CODE
Text: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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B310WKU
OT-323
25-AUG-10
KSD-D5D016-001
DIODE GE
SDB310WKU
D SCHOT
MARKIN CODE
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Untitled
Abstract: No abstract text available
Text: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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B310WKU
OT-323
25-AUG-10
KSD-D5D016-001
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b310 diode
Abstract: B310 SDB310WAU
Text: SDB B310 0WAU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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OT-323
25-AUG-10
KSD-D5D015-001
b310 diode
B310
SDB310WAU
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Untitled
Abstract: No abstract text available
Text: SDB B310 0WAU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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OT-323
25-AUG-10
KSD-D5D015-001
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DIODE GE
Abstract: SDB310WMU KSD-D5D017-001
Text: SDB B310W WMU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.
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B310W
OT-323
25-AUG-10
KSD-D5D017-001
DIODE GE
SDB310WMU
KSD-D5D017-001
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b310 diode
Abstract: 3B MARKING diode b310 B310
Text: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3
1E-04
1E-05
1E-06
1E-07
1E-08
b310 diode
3B MARKING
diode b310
B310
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b310 diode
Abstract: 3B MARKING B310
Text: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3
1E-04
1E-05
1E-06
1E-07
1E-08
b310 diode
3B MARKING
B310
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b310 diode
Abstract: MBRS3100T3 case 403-03 diode b310 B310
Text: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3
r14525
MBRS3100T3/D
b310 diode
MBRS3100T3
case 403-03
diode b310
B310
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SMC 403-03
Abstract: case 403-03 MBRS3100 MBRS3100T3G MBRS3100T3 B310
Text: MBRS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3G
MBRS3100T3/D
SMC 403-03
case 403-03
MBRS3100
MBRS3100T3G
MBRS3100T3
B310
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403 marking
Abstract: MBRS3100T3G case 403 SMC 403-03 NRVBS3100T3G
Text: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3G,
NRVBS3100T3G
MBRS3100T3/D
403 marking
MBRS3100T3G
case 403
SMC 403-03
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Untitled
Abstract: No abstract text available
Text: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS3100T3G,
NRVBS3100T3G
MBRS3100T3/D
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45LF
Abstract: 47LF DO-205AC
Text: Bulletin I2030/A 45L R .D SERIES Stud Version STANDARD RECOVERY DIODES Features 150A Diffused diode High current carrying capability High voltage ratings up to 1600V High surge current capabilities Stud cathode and stud anode version Typical Applications
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I2030/A
DO-205AC
DO-30)
45LF
47LF
DO-205AC
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OE00
Abstract: QS34XST253
Text: QS34XST253 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS SynchroSwitchTM 32:8 Mux/Demux With Active Terminators QS34XST253 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional signal flow
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QS34XST253
80-pin
QS34XST253
MDSL-00213-00
OE00
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IDTQS34XVH245
Abstract: QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
IDTQS34XVH245
QS34XVH245
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