FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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smd diode B3
Abstract: GHB-1206L-B3
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.
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GHB-1206L-B3
2000PCS
DEC/05/2002
smd diode B3
GHB-1206L-B3
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TY SMD diode
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-B3 Features Description !SINGLE COLOR. The Blue source color devices are made with !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. !IDEAL InGaN on SiC Light Emitting Diode.
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1500PCS
DEC/05/2002
TY SMD diode
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 060 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units %- / 0 12 "+ / 3 4
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IF110
Abstract: ISOPLUS247
Text: Preliminary Technical Information IXGR72N60B3D1 GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions
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IXGR72N60B3D1
IC110
247TM
IF110
2x61-06A
72N60B3
02-10-09-D
IF110
ISOPLUS247
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1SS184
Abstract: marking code b3 reverse recovery time
Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC
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1SS184
OT-23
1SS184
marking code b3
reverse recovery time
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM B3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) IXGR72N60B3D1 (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions
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IC110
IXGR72N60B3D1
247TM
IF110
RB160
2x61-06A
72N60B3
02-10-09-D
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 "+ / 3 4
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marking code b3
Abstract: 1SS184
Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC
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1SS184
OT-23
marking code b3
1SS184
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: B3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OT-23
1SS184
OT-23
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150GB123D
Abstract: No abstract text available
Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1 + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 . &( 2 .0 A ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +
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150GB123D
150GB123D
150GAL123D
150GAR123D
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 "+ / 3 4 % / 12 % - 8 / 0 12 % - / 0 12
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 060 I3 Absolute Maximum Ratings Symbol Conditions +, "5647 "59, Values Units % - / 0 12 " + / 3 4 % / 12 %- 8 / 0 12 % - / 0 12 00 4 4 %- 8 / 0 12 4 : 0 12 %- 8 SEMICELL CAL-DIODE
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 "+ / 3 4 % / 12 % - 8 / 0 12 % - / 0 12 9 3 4 4 % - 8 / 0 12 4 ; 0 12 % - 8 SEMICELL CAL-DIODE
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Untitled
Abstract: No abstract text available
Text: SKCD 81 C 120 I HD Absolute Maximum Ratings Symbol Conditions +, "5647 "5:, Values Units % - / 0 12 " + / 3 4 % / 12 % - 8 / 0 12 % - / 0 12 9 3 4 4 % - 8 / 0 12 4 ; 0 12 % - 8 SEMICELL CAL-DIODE
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12its
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diode b3
Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3
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35-12A5
50-12A5
75-12A5
B3-12
75-12A3
75-12A3
B3-16
100-12A3
diode b3
MII 75-12 A3
resistor catalog
30-12A6
grease
diode 12A3
B3-12
200-12A4
10-06A6
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B4 diode
Abstract: diode b3 diode B4 MA4GC6774
Text: MA4GC6774 77 GHz GaAs SP3T PIN Diode Switch Features n n n n n n n n 77 Ghz Frequency Response 1.4 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion
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MA4GC6774
MA4CG6774
B4 diode
diode b3
diode B4
MA4GC6774
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A1L DIODE
Abstract: diode l 0607 MA4GC6772 Diode B4 diode b3 B4 diode
Text: MA4GC6772 77 GHz GaAs Multi-Throw PIN Diode Switch Features n n n n n n n n V 4.00 OD-S-1243 77 Ghz Frequency Response 4.0 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion
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MA4GC6772
OD-S-1243
MA4GC6772
A1L DIODE
diode l 0607
Diode B4
diode b3
B4 diode
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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OCR Scan
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554S2
4fl55452
10ohm
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Untitled
Abstract: No abstract text available
Text: bbS3 T3 i 00 2 b3 ^b 73a h a p x Philips Semiconductors Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE blE J> Q U IC K R E F E R E N C E DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar
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BB134
BB134
OD323.
BB135,
MBC780
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BAV45
Abstract: philips BAV45
Text: • ^ 53^31 002 b3 1 4 t>T2 N AMER P H I L I P S / D I S C R E T E ■ APX BAV45 bTE T> y PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,
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002b314
BAV45
bb53131
BAV45
philips BAV45
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2SC3997
Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Text: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)
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DG12M3D
T0220FI
DD54RCLS
T0-220
1--f-14
DD52RC
MT930707TR
2SC3997
HPA150R
2SC4636
2SC3676
2SC4450
TR 2SC3997
2SC3894
2SC3895
DD54RC
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