smd diode GW
Abstract: diode ESM 315 K451
Text: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =
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IRF7523D1
Rf7523d1
smd diode GW
diode ESM 315
K451
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Untitled
Abstract: No abstract text available
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz
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ASI3486
I3486
AS13486
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Untitled
Abstract: No abstract text available
Text: LM41 LM41 Hardware Monitor with Thermal Diode Inputs and Bus Literature Number: SNIS131D LM41 Hardware Monitor with Thermal Diode Inputs and Bus General Description The LM41 is a hardware monitor that measures 2 temperature zones, 5 voltages and has a single-wire interface SensorPath
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SNIS131D
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ESJA92
Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Text: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJA92
ESJA92lÂ
I95t/R89)
Shl50
ESJA92-10
T151
high voltage diode 100 kv
esja
212es
12KV 2ma
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PDF
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ESJC30-08
Abstract: ESJC30 ESJC30-05 T151
Text: ESJC30 4 .5kV, 7.2kV Si'MijÿWi-K ¡ftJ±ft3K £r ‘fs f— K : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC30U, F *rr0 ESJC30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.
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ESJC30
ESJC30-05
ESJC30-08
liMJ15ijÃ
19S24^
I95t/R89)
ESJC30-08
T151
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1R SOD-123
Abstract: A6 SOT-23 SOT 23 A6 on MARKING 1R SOD-123 js u sot-23 BAS 16 MARKING
Text: BAS 16, BAS16W Silicon Epitaxial Planar Diode 0.55 Fast sw itching diode in case SOT-23, especially suited for autom atic insertion. ^Cathode Mark Top View Marking A6 B î* Top View SOD-123 Plastic Package W eight approx. 0.01 g D im ensions in m m Absolute Maximum Ratings
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BAS16W
OT-23,
OD-123
OT-23)
1R SOD-123
A6 SOT-23
SOT 23 A6 on
MARKING 1R SOD-123
js u sot-23
BAS 16 MARKING
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0549H
Abstract: SNIS132D LM32A 100cjd
Text: LM32 LM32 Dual Thermal Diode Temperature Sensor with Bus Literature Number: SNIS132D LM32 October 20, 2011 Dual Thermal Diode Temperature Sensor with Bus General Description Features The LM32 is a digital temperature sensor that measures 3 temperature zones and has a single-wire interface SensorPath bus. SensorPath data is pulse width encoded, thereby
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SNIS132D
0549H
SNIS132D
LM32A
100cjd
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. C B AS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS
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CBAS17
OT-23
100nction
100mA
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Untitled
Abstract: No abstract text available
Text: AS12C52 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.1p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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AS12C52
Voltage10
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Untitled
Abstract: No abstract text available
Text: AS12B42 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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AS12B42
Voltage10
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AS1320
Abstract: AS1320-T MO178
Text: Datasheet AS1320 200mA Step-Up DC-DC Converter 1 General Description 2 Key Features ! Fixed Output Voltage: 3.3V ! Output Current: Up to 200mA @ 2V ! Internal Synchronous Rectifier ! Requires No External Schottky Diode or FETs In order to save power the AS1320 features a shutdown mode,
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AS1320
200mA
200mA
AS1320
Step-Up/AS1320
AS1320-T
MO178
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Untitled
Abstract: No abstract text available
Text: AS11B42 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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AS11B42
Voltage10
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Untitled
Abstract: No abstract text available
Text: AS11B51 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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AS11B51
Voltage10
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Untitled
Abstract: No abstract text available
Text: AS11B52 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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AS11B52
Voltage10
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Untitled
Abstract: No abstract text available
Text: AS12C51 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.1p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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AS12C51
Voltage10
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PDF
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Untitled
Abstract: No abstract text available
Text: AS12C42 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.1p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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AS12C42
Voltage10
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Untitled
Abstract: No abstract text available
Text: AS11B10 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B Mounting StyleS
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AS11B10
Voltage10
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AS1431
Abstract: LM338V schematic astec power supply
Text: AS1004 ASTEC Micropower Voltage Reference Features Description • Low voltage reference The AS1004 is a two-terminal precision band-gap voltage reference with a low turn-on current of 10 jaA. • 10 turn-on current for AS1004-1.2 Emulating a 1.235 V zener diode, the AS1004 operates more
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AS1004-1
AS1004-2
AS1004
AS1004
LM338
AS1431
LM338V
schematic astec power supply
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Astec Semiconductor
Abstract: lt1004 t092 lz 40 6 pin
Text: <////> AS1004 ASTEC Micropower Voltage Reference Features Description • Low voltage reference The AS1004 is a two-terminal precision band-gap voltage reference with a low turn-on current of 10 piA. • 10 nA turn-on current for AS1004-1.2 Emulating a 1.235 V zener diode, the AS1004 operates more
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AS1004-1
AS1004-2
AS1004
AS1004
Astec Semiconductor
lt1004 t092
lz 40 6 pin
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lz 40 6 pin
Abstract: schematic astec power supply
Text: <xx/ z > ASTEC AS1004 Micropower Voltage Reference Features Description • Low voltage reference The AS1004 is a two-terminal precision band-gap voltage reference with a low turn-on current of 10 |iA. • 10 jiA turn-on current for AS1004-1.2 Emulating a 1.235 V zener diode, the AS1004 operates more
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AS1004-1
AS1004-2
AS1004
AS1004
lz 40 6 pin
schematic astec power supply
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PDF
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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MPS 0731
Abstract: I2 200-5 AN156 X9530 X9530B15I X9530V14I TAA 691
Text: Preliminary Information X9530 Temperature Compensated Laser Diode Controller DESCRIPTION • Compatible with Popular Fiber Optic Module Specifications such as Xenpak, SFF, SFP, and GBIC • Package —14 Pin TSSOP —15 Lead 2.7 x 3.5mm Chip-Scale Package
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X9530
2176-bit
MPS 0731
I2 200-5
AN156
X9530
X9530B15I
X9530V14I
TAA 691
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Information X9530 Temperature Compensated Laser Diode Controller DESCRIPTION • Compatible with Popular Fiber Optic Module Specifications such as Xenpak, SFF, SFP, and GBIC • Package —14 Pin TSSOP —15 Lead 2.7 x 3.5mm Chip-Scale Package
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X9530
2176-bit
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