Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265FAA
OP265
OP505
OP535
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Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP266FAA
OP266
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OP266
Abstract: OP506 OP535 OP266FAD OP266F
Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP266FAA
OP266
OP506
OP535
OP266FAD
OP266F
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OP265
Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
Text: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265AA
OP265
OP505
OP535
OP265AB
OP265AC
OP265AD
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OP265FAD
Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265FAA
OP265
OP505
OP530
OP265FAD
GaAs 850 nm Infrared Emitting Diode
OP535
OP265F
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Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265FAA
OP265
OP505
OP535
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Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265FAA
OP265
OP505
OP535
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Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
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OP265FAA
OP265
OP505
OP535
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Untitled
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)
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OP266AA
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C10535E
Abstract: MEI-1202 NDL7001 NDL7001L NDL7401P NDL7408P
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
C10535E
MEI-1202
NDL7001L
NDL7401P
NDL7408P
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11-5B2
Abstract: E67349 TLP722 TLP722F VDE0884
Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage
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TLP722
TLP722
UL1577,
E67349
VDE0884
VDE0884
EN60950,
11-5B2
E67349
TLP722F
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TLP590
Abstract: No abstract text available
Text: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP
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TLP590
TLP590
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SE301A
Abstract: 30mWI
Text: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header
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h42752S
SE301A
SE301A
940nm,
T-41-11
ta-259c)
AM81ENT
30mWI
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11-5B2
Abstract: E67349 TLP722 TLP722F VDE0884
Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . 4 3 5LJZ JJ lU TLP722 : Single circuit
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TLP722
TLP722
UL1577,
E67349
VDE0884
VDE0884
EN60950,
11-5B2
E67349
TLP722F
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varactor diode notes
Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
Text: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in
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CAY10
varactor diode notes
varactor diode high frequency
x band varactor diode
"Varactor Diode"
Parametric Varactor diodes
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Untitled
Abstract: No abstract text available
Text: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in
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SE302A
SE302A
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CVD-450
Abstract: Laser Diode 808 nm
Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse nide Monolithic Quantum Well Arrays made by MOCVD
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VD-400
CVD-400
CVD-450
Laser Diode 808 nm
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SE310
Abstract: PH110
Text: NEC ELECTRONICS INC 3QE D • 1=427525 0 0 2 ‘iû5b M ■ /> T -tl-ll LIGHT EMITTING DIODE SE310 GaAs INFRARED E M IT T IN G DIODE DESCRIPTION The SE310 is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in plastic.
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SE310
SE310
PH110
fcj4E7555
T-41-11
PH110
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SE308T
Abstract: No abstract text available
Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.
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SE308-T
SE308
PH108.
J22686
SE308T
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ASI15
Abstract: No abstract text available
Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE S E 307-C GaAs INFRARED EMITTING DIODE -N EP O C SERIES— DESCRIPTION The SE307-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 9 4 0 nm.
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307-C
SE307-C
SE303ANCRF-C:
ASI15
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PH201A
Abstract: photo diode circuit
Text: NEC PHOTO DIODE ELECTRON DEVICE PH201A PHOTO DETECTOR GaAsP PHOTE DIODE -N E P O C S E R IE S - DESCRIPTION The PH201A is a GaAsP gallium arsenide phosphide photo diode designed for use as a photo detector o f electronic camera. It features wide active area, close spectral response to that o f human eye and wide light current range.
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PH201A
PH201A
IQ-14
photo diode circuit
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SE303A-C
Abstract: No abstract text available
Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE303A-C GaAs INFRARED EMITTING DIODE -N E P O C SERIES - DESCRIPTION The SE303A-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forw ard bias, i t emits a spectrally narrow band of radiation peaking ax 940 nm.
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SE303A-C
SE303A-C
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se3-13
Abstract: No abstract text available
Text: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.
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SE313
SE313
se3-13
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optointerrupter
Abstract: No abstract text available
Text: Optointerrupter Specifications _ H22B1, H22B2, H22B3 Optointerrupter GaAs Infrared Emitting Diode andNPN Sfllcon Photo-Darlington Module with 1mm Aperture T he H22B Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington-connected
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H22B1,
H22B2,
H22B3
optointerrupter
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