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Abstract: No abstract text available
Text: S PY0016C SP S Sttep-Up DC/DC Converter Preliminary SEP. 20, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.
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Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
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Abstract: No abstract text available
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
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AO6602
Abstract: uis test
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
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AO4612
Abstract: Complementary diode AR s1 56
Text: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4612
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diode AR s1 56
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AO4616
Abstract: 20V P-Channel Power MOSFET 500A
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
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20V P-Channel Power MOSFET 500A
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Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AON4605
AON4605
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Abstract: No abstract text available
Text: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4612
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3X2A
Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AON4605
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AO4830
Abstract: No abstract text available
Text: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A
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AO4830
AO4830
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ao4830
Abstract: AO4830L
Text: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.
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AO4830L
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ao4830
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Abstract: No abstract text available
Text: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A
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AO4830
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AO4886
Abstract: soic-8 33a 100V N-Channel Power MOSFET 500A
Text: AO4886 100V Dual N-Channel MOSFET General Description Product Summary VDS The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,
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AO4886
AO4886
soic-8 33a
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AO6802
Abstract: Qg (nC)
Text: AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V
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MZ2L-50R
Abstract: compressor cooper ta 3000 Le78D11 g726 ADPCM algorithm le77d21 Le78D11 Chip Set Users Guide 4148s nichicon gx 080729 VoicePathTM API Le78D110VC
Text: Le78D11 Integrated Voice Chip Sets VoiceChip Family 770 Series APPLICATIONS ORDERING INFORMATION • Ideal for Short/Medium Loops of ~2000 ft, 26 AWG, and A VoiceChip™ 770 series SLIC device must be used with this part. ■ ■ ■ ■ 5 REN loads Voice over IP/DSL – Integrated Access Devices, Smart
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Le78D11
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GR-909
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compressor cooper ta 3000
Le78D11
g726 ADPCM algorithm
le77d21
Le78D11 Chip Set Users Guide
4148s
nichicon gx
080729 VoicePathTM API
Le78D110VC
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ISS133
Abstract: M8305
Text: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID
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M8305
ISS133
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diode AR S1 77
Abstract: z645
Text: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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AN7421
Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Text: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must
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Abstract: No abstract text available
Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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IF88
Abstract: ao49
Text: AO4948 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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AO4948
IF88
ao49
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Abstract: No abstract text available
Text: AO4930 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4930 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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AO4930
AO4930
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Abstract: No abstract text available
Text: AO4948 30V Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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2sk3443
Abstract: transistor te 468 S2 MARKING TRANSISTOR
Text: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type rc-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mil (typ.) High forward transfer admittance: IYfs I = 9 S (typ.)
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2SK3443
ID-30A
2sk3443
transistor te 468
S2 MARKING TRANSISTOR
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