Le57D11
Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the
|
Original
|
Le57D11
Legerity SLAC
L11A050AA
jr223
RTX22
AM79Q021
diode AR s1 55
CD11
CD12
CD22
|
PDF
|
P40N03
Abstract: p40n03l diode AR s1 47 P40N03L-20 n mosfet depletion pspice model parameters n mosfet pspice parameters depletion p mosfet n channel depletion MOSFET schematic diagram dc converter 72 v to 12 v STP40N03L-20
Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
STP40N03L-20
P40N03L-20
175oC
O-220
P40N03
p40n03l
diode AR s1 47
P40N03L-20
n mosfet depletion pspice model parameters
n mosfet pspice parameters
depletion p mosfet
n channel depletion MOSFET
schematic diagram dc converter 72 v to 12 v
STP40N03L-20
|
PDF
|
n mosfet depletion pspice model parameters
Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
Text: STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
STP38N06
P38N06
100oC
175oC
O-220
n mosfet depletion pspice model parameters
P38N06
diode AR s1 65
n mosfet pspice parameters
NMOS depletion pspice model
mosfet 20n
N CHANNEL DEPLETION MOSFET
TRANSISTOR SDM M6
STP38N06
SDM M6
|
PDF
|
D20N06
Abstract: TRANSISTOR SDM M6 SDM M6
Text: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
STD20N06
D20N06
100oC
175oC
O-251)
O-252)
O-251
O-252
D20N06
TRANSISTOR SDM M6
SDM M6
|
PDF
|
STP38N06
Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
Text: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
STP38N06
100oC
175oC
O-220
STP38N06
n mosfet depletion pspice model parameters
NMOS depletion pspice model
19E-02
|
PDF
|
n mosfet depletion pspice model parameters
Abstract: TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02
Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
STP40N03L-20
175oC
O-220
n mosfet depletion pspice model parameters
TRANSISTOR SDM M6
STP40N03L-20
transistor m6 l6
NMOS depletion pspice model
SDM M6
tt20n
19E-02
|
PDF
|
AO6604
Abstract: No abstract text available
Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AO6604
AO6604
|
PDF
|
AO4629
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
|
Original
|
AO4629
AO4629
|
PDF
|
AO4629
Abstract: a4751 20V P-Channel Power MOSFET 500A
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
|
Original
|
AO4629
AO4629
a4751
20V P-Channel Power MOSFET 500A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
|
Original
|
AO4629
AO4629
noted29
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
|
Original
|
AON4605
AON4605
110m1
180m1
|
PDF
|
AO4629L
Abstract: No abstract text available
Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
|
Original
|
AO4629L
AO4629L
|
PDF
|
3X2A
Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
|
Original
|
AON4605
AON4605
3X2A
|
PDF
|
PM45100K
Abstract: PM50100K 0312C
Text: PM45100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain
|
Original
|
PM45100K
31Max
PM45100K
PM50100K
0312C
|
PDF
|
|
|
3X2A
Abstract: No abstract text available
Text: AON4803 20V P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AON4803
AON4803
15nsient
3X2A
|
PDF
|
AON4807
Abstract: No abstract text available
Text: AON4807 30V Dual P-Channel MOSFET General Description Product Summary The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AON4807
AON4807
|
PDF
|
AO4803A
Abstract: No abstract text available
Text: AO4803A 30V General Description Dual P-Channel MOSFET Product Summary VDS The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)
|
Original
|
AO4803A
AO4803A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)
|
Original
|
AO4840
AO4840
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AON4807 30V Dual P-Channel MOSFET General Description Product Summary The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AON4807
AON4807
|
PDF
|
AO4838
Abstract: No abstract text available
Text: AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AO4838
AO4838
|
PDF
|
AO4803A
Abstract: No abstract text available
Text: AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V
|
Original
|
AO4803A
AO4803A
|
PDF
|
AO4830
Abstract: No abstract text available
Text: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A
|
Original
|
AO4830
AO4830
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V
|
Original
|
AO4803
AO4803
|
PDF
|
ao4830
Abstract: AO4830L
Text: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.
|
Original
|
AO4830L
AO4830L
ao4830
|
PDF
|
