diode AR S1 77
Abstract: z645
Text: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
diode AR S1 77
z645
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M8500
Abstract: No abstract text available
Text: S T M8500 S amHop Microelectronics C orp. Arp,20 2005 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500
M8500
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
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Untitled
Abstract: No abstract text available
Text: S T M8500 S amHop Microelectronics C orp. Oct.06, 2004 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V
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M8500A
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P40N03
Abstract: p40n03l diode AR s1 47 P40N03L-20 n mosfet depletion pspice model parameters n mosfet pspice parameters depletion p mosfet n channel depletion MOSFET schematic diagram dc converter 72 v to 12 v STP40N03L-20
Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP40N03L-20
P40N03L-20
175oC
O-220
P40N03
p40n03l
diode AR s1 47
P40N03L-20
n mosfet depletion pspice model parameters
n mosfet pspice parameters
depletion p mosfet
n channel depletion MOSFET
schematic diagram dc converter 72 v to 12 v
STP40N03L-20
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D20N06
Abstract: TRANSISTOR SDM M6 SDM M6
Text: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STD20N06
D20N06
100oC
175oC
O-251)
O-252)
O-251
O-252
D20N06
TRANSISTOR SDM M6
SDM M6
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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n mosfet depletion pspice model parameters
Abstract: TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02
Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP40N03L-20
175oC
O-220
n mosfet depletion pspice model parameters
TRANSISTOR SDM M6
STP40N03L-20
transistor m6 l6
NMOS depletion pspice model
SDM M6
tt20n
19E-02
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AO4606
Abstract: No abstract text available
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
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AO4627
Abstract: No abstract text available
Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4627
AO4627
unless4627
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Untitled
Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
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Untitled
Abstract: No abstract text available
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
100m1
170m1
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Untitled
Abstract: No abstract text available
Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4627
AO4627
100m1
165m1
otherwi4627
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AO6604
Abstract: No abstract text available
Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO6604
AO6604
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AO6602
Abstract: uis test
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
uis test
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AO4618
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
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SKM652
Abstract: SKM692F SKM682F
Text: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì
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ai3bLj71
fll3bb71
T-39-15
SKM651
SKM652F
SKM681F
SKM682F
SKM691F
SKM692F
SKM652
SKM692F
SKM682F
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5L155
Abstract: No abstract text available
Text: SN55ALS056, SN55ALS057 TRAPEZOIDAL WAVEFORM INTERFACE BUS TRANSCEIVERS _ D 327S . APRIL 1 9 6 9 SUITABLE FOR IEEE STANDARD 8 9 6 APPLICATIONS* • S N 55A L S 05 6 Is an Octal Transceiver S N 55ALS0S6 . . J OR W PACKAGE TOP V IE W • S N 55A L S 05 7 Is a Quad Transceiver
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SN55ALS056,
SN55ALS057
55ALS0S6
5L155
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diode marking c34
Abstract: IRF4905L IRF4905S
Text: PD- 9.1478A International IQ R Rectifier IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V RüS(on) = 0.02Q
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IRF4905S)
IRF4905L)
IRF4905S/L
diode marking c34
IRF4905L
IRF4905S
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