Le57D11
Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the
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Le57D11
Legerity SLAC
L11A050AA
jr223
RTX22
AM79Q021
diode AR s1 55
CD11
CD12
CD22
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Untitled
Abstract: No abstract text available
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
100m1
170m1
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AO6602
Abstract: uis test
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
uis test
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AO4629
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
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AO4629
Abstract: a4751 20V P-Channel Power MOSFET 500A
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
a4751
20V P-Channel Power MOSFET 500A
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Untitled
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
noted29
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AO4629L
Abstract: No abstract text available
Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629L
AO4629L
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EUPEC Thyristor T 1059
Abstract: thyristor t 718 n thyristor T 218 N EUPEC Thyristor T 869 EUPEC t 1209 EUPEC Thyristor 1901 DIODE 4003 EUPEC T 1078 F EUPEC T 821 Emitter Turn-Off thyristor
Text: . power the Home Products N-Thyristors News Contact Editorials Job Offers Company Search Site Content VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs the figures in the part-no. represent the current rating [A]
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AO4803
Abstract: diode AR s1 52
Text: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V
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AO4803
AO4803
diode AR s1 52
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AO4803A
Abstract: No abstract text available
Text: AO4803A 30V General Description Dual P-Channel MOSFET Product Summary VDS The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)
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AO4803A
AO4803A
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AO4803A
Abstract: No abstract text available
Text: AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V
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AO4803A
AO4803A
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AO4830
Abstract: No abstract text available
Text: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A
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AO4830
AO4830
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Untitled
Abstract: No abstract text available
Text: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V
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ao4830
Abstract: AO4830L
Text: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.
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AO4830L
AO4830L
ao4830
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AO6802
Abstract: Qg (nC)
Text: AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V
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AO6802
AO6802
Qg (nC)
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Qg (nC)
Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
Text: AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V
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AO6810
AO6810
Qg (nC)
70°C
diode AR S1 77
diode AR S1 70
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AOD609
Abstract: aod609 datasheet
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
aod609 datasheet
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Untitled
Abstract: No abstract text available
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
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M8402
Abstract: 041 DIODE
Text: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V
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M8402
M8402
041 DIODE
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M8306
Abstract: HR ONS diode ar s1
Text: S T M8306 Green Product S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) Max V DS S
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M8306
M8306
HR ONS
diode ar s1
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mar-06
Abstract: STM8306 m8306 diode AR s1 52
Text: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A
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M8306
mar-06
STM8306
m8306
diode AR s1 52
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V
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M8500A
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AON7826
Abstract: No abstract text available
Text: AON7826 20V General Description Dual N-Channel MOSFET Product Summary The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS ON MOSFETs in a dual DFN3x3 package. The AON7826 is
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AON7826
AON7826
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C1C14
Abstract: Motorola AR 164
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
C1C14
Motorola AR 164
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